2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献_第4页

Iterative De-Embedding and Extracted Maximum Oscillation Frequency $f_{text{MAX}}$ in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors 毫米波InP DHBTs的迭代去嵌入和最大振荡频率$f_{text{MAX}}$提取:器件尺寸对提取误差的影响

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550904

W. Quan, A. Arabhavi, R. Flueckiger, O. Ostinelli, C. Bolognesi

{"title":"Iterative De-Embedding and Extracted Maximum Oscillation Frequency $f_{text{MAX}}$ in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors","authors":"W. Quan, A. Arabhavi, R. Flueckiger, O. Ostinelli, C. Bolognesi","doi":"10.1109/BCICTS.2018.8550904","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8550904","url":null,"abstract":"InP/GaAsSb DHBTs with varying emitter lengths $pmb{L}_{text{E}}$, emitter widths WE, and base metal widths $pmb{W}_{mathbf{B}}$ are characterized to determine their maximum oscillation cutoff frequency $f_{text{MAX}}$ using iterative de-embedding in comparison to the standard OPEN-SHORT and SHORT-OPEN de-embedding schemes. With increasing measurement frequencies the OPEN-SHORT and SHORT-OPEN methods become increasingly subject to pathologies in the Mason Unilateral power gain which corrupt the extracted $f_{mathbf{MAX}}$. In contrast, iterative de-embedding is free of such complications. In the present work, we characterize the $f_{text{MAX}}$ extraction error introduced by the usual de-embedding techniques with respect to iterative de-embedding as a function of DHBT dimensions $pmb{L}_{mathbf{E}},pmb{W}_{mathbf{E}}$, and $pmb{W}_{mathbf{B}}$ to reveal that extracted $pmb{f}_{mathbf{MAX}}$ values are especially sensitive to the emitter width $pmb{W}_{mathbf{E}}$. De-embedding errors appear to carry over to extrinsic collector area which sensitively affects $f_{text{MAX}}$.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"27 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131165981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A 220 GHz OOK Outphasing Transmitter in 130-nm BiCMOS Technology 基于130纳米BiCMOS技术的220 GHz OOK同相发射机

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550896

Kefei Wu, B. Fahs, M. Hella

引用次数: 12

Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA TDD-LTE BTS PA中引起ACLR退化的GaN HEMT门滞后等效电路建模及参数提取

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551149

Toshihiro Shimoda, Yoji Murau, T. Kaneko

引用次数: 1

A Low Insertion-Loss 10–110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS 低插入损耗10-110 GHz数字可调谐开关在22纳米FD-SOI CMOS

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550908

R. Ciocoveanu, R. Weigel, A. Hagelauer, V. Issakov

引用次数: 6

Indium Phosphide Photonic Integrated Circuits: Technology and Applications 磷化铟光子集成电路:技术与应用

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550947

J. Klamkin, Hongwei Zhao, B. Song, Yuan Liu, B. Isaac, S. Pinna, F. Sang, L. Coldren

引用次数: 17

A Crystal-Less Programmable Clock Generator with RC-LC Hybrid Oscillator for GHz Applications in 14 nm FinFET CMOS 带RC-LC混合振荡器的无晶可编程时钟发生器，用于14nm FinFET CMOS的GHz应用

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551126

Jeongho Hwang, Gyu-Seob Jeong, Sang-Hyeok Chu, Wooseok Kim, Taeik Kim, D. Jeong

引用次数: 5

A 200 MHz Bandwidth GaAs Switch-Mode Supply Modulator 200mhz带宽GaAs开关模式电源调制器

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551132

T. Soma, S. Hori, K. Kunihiro

引用次数: 0

A 3D-Integrated 56 Gb/s NRZ/PAM4 Reconfigurable Segmented Mach-Zehnder Modulator-Based Si-Photonics Transmitter 基于3d集成56 Gb/s NRZ/PAM4可重构分段马赫-曾德尔调制器的硅光子发射机

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551089

Cheng Li, Kunzhi Yu, Jinsoo Rhim, Kehan Zhu, Nan Qi, Marco Fiorentino, T. Pinguet, M. Peterson, V. Saxena, S. Palermo

{"title":"A 3D-Integrated 56 Gb/s NRZ/PAM4 Reconfigurable Segmented Mach-Zehnder Modulator-Based Si-Photonics Transmitter","authors":"Cheng Li, Kunzhi Yu, Jinsoo Rhim, Kehan Zhu, Nan Qi, Marco Fiorentino, T. Pinguet, M. Peterson, V. Saxena, S. Palermo","doi":"10.1109/BCICTS.2018.8551089","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8551089","url":null,"abstract":"Silicon photonic interconnects have the potential to break bandwidth-distance limitations intrinsically associated with electrical links. This paper presents a dual-mode NRZ/PAM4 silicon photonic transmitter based on a segmented-electrode Mach-Zehnder Modulator (SE-MZM). The electrical portion of the transmitter, fabricated in a 16nm FinFET process, utilizes stacked-CMOS push-pull driver stages that include a parallel asymmetric fast discharging path to compensate for the slow transition edge caused by the nonlinear capacitance of the reversed-biased MZM diode segments. High-speed PAM4 modulation is achieved with phase interpolators for coarse delay control between the MSB and LSB segments and by employing independent digital-controlled delay lines on a per-segment basis to match the optical propagation delay. The 56 Gb/s optical transmitter achieves 9.5 dB extinction ratio and 12.6 pJ/bit power efficiency, excluding laser power, when driving the flip-chip bonded MZM designed in a 130 nm SOI process.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134336588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

The RF Sampler: Chip-Scale Frequency Conversion and Filtering Enabling Affordable Element-Level Digital Beamforming 射频采样器:芯片级频率转换和滤波，实现价格合理的元件级数字波束形成

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551141

M. Morton, Yan Chen, A. Molnar, Edward C. Szoka, Robin Ying

引用次数: 3

SiGe HBT PA Design for 5G (28 GHz and Beyond) - Modeling and Design Challenges 5G (28 GHz及以上)的SiGe HBT PA设计-建模和设计挑战

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551061

M. Heijden, A. Scholten

引用次数: 2