TDD-LTE BTS PA中引起ACLR退化的GaN HEMT门滞后等效电路建模及参数提取

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8551149

Toshihiro Shimoda, Yoji Murau, T. Kaneko

{"title":"TDD-LTE BTS PA中引起ACLR退化的GaN HEMT门滞后等效电路建模及参数提取","authors":"Toshihiro Shimoda, Yoji Murau, T. Kaneko","doi":"10.1109/BCICTS.2018.8551149","DOIUrl":null,"url":null,"abstract":"This paper deals with the impact of GaN HEMT gate lag on radio performance of LTE TDD amplifier with digital predistorter (DPD). The mechanism of the gate lag with equivalent circuit modelling of GaN HEMT is investigated assuming RC delay circuit. Circuit parameters are extracted experimentally by measuring time constants with various conditions. Parameters related to gate lag is directly correlated with system radio performance for 4G mobile communications. Based on the extracted parameters and comparison of system parameters between 4G-LTE and 5G NR, device parameters required for 5G applications are proposed.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"30 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA\",\"authors\":\"Toshihiro Shimoda, Yoji Murau, T. Kaneko\",\"doi\":\"10.1109/BCICTS.2018.8551149\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper deals with the impact of GaN HEMT gate lag on radio performance of LTE TDD amplifier with digital predistorter (DPD). The mechanism of the gate lag with equivalent circuit modelling of GaN HEMT is investigated assuming RC delay circuit. Circuit parameters are extracted experimentally by measuring time constants with various conditions. Parameters related to gate lag is directly correlated with system radio performance for 4G mobile communications. Based on the extracted parameters and comparison of system parameters between 4G-LTE and 5G NR, device parameters required for 5G applications are proposed.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"30 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8551149\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551149","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了GaN HEMT门滞后对带数字预失真器(DPD)的LTE TDD放大器无线电性能的影响。采用等效电路建模的方法研究了GaN HEMT在RC延迟电路条件下的门滞后机理。通过测量不同条件下的时间常数，实验提取了电路参数。在4G移动通信中，门滞后相关参数与系统无线电性能直接相关。在提取参数的基础上，对比4G-LTE和5G NR的系统参数，提出5G应用所需的设备参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA

This paper deals with the impact of GaN HEMT gate lag on radio performance of LTE TDD amplifier with digital predistorter (DPD). The mechanism of the gate lag with equivalent circuit modelling of GaN HEMT is investigated assuming RC delay circuit. Circuit parameters are extracted experimentally by measuring time constants with various conditions. Parameters related to gate lag is directly correlated with system radio performance for 4G mobile communications. Based on the extracted parameters and comparison of system parameters between 4G-LTE and 5G NR, device parameters required for 5G applications are proposed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

自引率

0.00%

发文量