2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS 一种用于SiGe BiCMOS雷达的6kv防静电低功耗24ghz LNA

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550914

V. Issakov, Sebastian Kehl-Waas, R. Ciocoveanu, W. Simbürger, A. Geiselbrechtinger

引用次数: 11

Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits 使用sigon - soi hbt构建300°C的模拟电路

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551100

Anup P. Omprakash, Adrian Ildefonso, George N. Tzintzarov, J. Babcock, R. Mukhopadhyay, J. Cressler

{"title":"Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits","authors":"Anup P. Omprakash, Adrian Ildefonso, George N. Tzintzarov, J. Babcock, R. Mukhopadhyay, J. Cressler","doi":"10.1109/BCICTS.2018.8551100","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8551100","url":null,"abstract":"The present work demonstrates the use of SiGe-on-SOI heterojunction bipolar transistors (HBTs) to implement analog building blocks that can operate from 24°Cto 300°C. A method to calibrate a Mextram compact model over this wide-temperature range is highlighted. Using a calibrated compact model, three different analog building blocks, a current mirror, a bandgap reference (BGR) circuit, and a Class-AB push-pull output stage, were designed, fabricated, and measured from 24°Cto 300°C. The cascode current mirror shows excellent output resistance $(>mathbf{60 M}Omega)$ and low mismatch ratio $(< mathbf{3}%)$ up to 300°C. A modular design approach for building a wide-temperature BGR is proposed. The designed BGR is shown to have a temperature coefficient (TC) of 88.28 ppm/°Cfrom 24°Cto 300°C, which, to the best of the authors' knowledge, is the lowest measured TC of any silicon-based BGR over this temperature range. Long-term operation of the BGR at 300°Cwas verified, and the output voltage was found to vary by less than 0.1%, which makes it robust for high-temperature operation. A Class-AB push-pull output stage is shown operational up to 300°C, and a current drive up to 1 mA and a quiescent current of $mathbf{21} mumathbf{A}$ is measured at 300°C.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"4 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114667496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling High-Current Effects in Bipolar Transistors: A Theory Review 双极晶体管的大电流效应建模:理论综述

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551078

M. Schröter, Sophia Falk

引用次数: 1

Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS 毫米波应用的技术定位:130/90nm SiGe BiCMOS与28nm RFCMOS

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551002

A. Joseph, V. Jain, S. N. Ong, R. Wolf, S. Lim, Jagar Singh

引用次数: 9

Improved Charge Modeling of Field-Plate Enhanced AlGaN/GaN HEMT Devices Using a Physics Based Compact Model 基于物理紧凑模型的场极板增强AlGaN/GaN HEMT器件的改进电荷建模

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550951

K. Kellogg, S. Khandelwal, N. Craig, L. Dunleavy

引用次数: 4

A 25.6-GS/s 40-GHz 1-dB BW Current-Mode Track and Hold Circuit with more than 5-ENOB 25.6-GS/s 40-GHz 1-dB BW电流模式跟踪和保持电路，超过5-ENOB

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550855

Xuan-Quang Du, M. Grozing, M. Berroth

引用次数: 9

A DC-60 GHz I/Q Modulator in 45 nm SOI CMOS for Ultra-Wideband 5G Radios 用于超宽带5G无线电的45纳米SOI CMOS DC-60 GHz I/Q调制器

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551144

H. Al-Rubaye, Gabriel M. Rebeiz

引用次数: 1

Large-Swing 22nm Si/SiGe FDSOI Stacked Cascodes for 56GBaud Drivers and 5G PAs 大摆幅22nm Si/SiGe FDSOI堆叠级联码，用于56GBaud驱动器和5G PAs

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550932

M. Sadeah Dadash, D. Harame, Sorin P. Voiniaescu

{"title":"Large-Swing 22nm Si/SiGe FDSOI Stacked Cascodes for 56GBaud Drivers and 5G PAs","authors":"M. Sadeah Dadash, D. Harame, Sorin P. Voiniaescu","doi":"10.1109/BCICTS.2018.8550932","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8550932","url":null,"abstract":"High bandwidth and high datarate large-swing optical-modulator-driver and 5G-PA output stages are reported. These series-stacked n-MOS and CMOS cascodes employ a new varactor-based scheme for output resistance and output swing tuning, without affecting the imaginary part of the output impedance and without placing matching networks on the signal path. Record 18Gb/s 64-QAM constellations with EVM lower than −30 dB at 10 dBm output power were measured at 5.5 GHz and 28 GHz, as well as 112 Gb/s (4-PAM) operation with $2.4mathbf{V}_{mathbf{pp}}$ output swing when the cascodes are used as linear broadband optical modulator drivers. The saturated output power, $pmb{P}_{mathbf{SAT}}$, of a single-ended stacked CMOS stage remains larger than 17 dBm from 1 to 45 GHz, with a peak of 19 dBm and PAE of 53.8% at 5.5 GHz, without any input and output matching network. A 4x MIMO transmitter with a differential version of the stacked CMOS output stage would meet the targeted 5G $pmb{P}_{mathbf{SAT}}$ of 28 dBm from 0.5 to 28 GHz. These results suggest that a single CMOS transceiver and PA could cover all the 5G bands from 0.5 GHz to 45 GHz. The n-MOSFET cascodes show better PAE above 10 GHz (33.4% at 28 GHz) than the CMOS version but with 1–2 dB lower $pmb{P}_{text{SAT}}$ and linearity.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123629533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications 发射极宽度缩放对PA应用SiGe hbt性能和坚固性的影响

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551054

S. Sirohi, V. Jain, Ajay Raman, B. T. Nukala, Elanchezhian Veeramani, J. Adkisson, A. Joseph

引用次数: 2

Quantification of Dopant Profiles in SiGe HBT Devices SiGe HBT器件中掺杂谱的定量研究

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551114

E. Jones, J. Poplawsky, Donavan Leonard, K. Chung, K. Mercurio, P. Brabant, T. Adam, P. Shea, T. Knight

引用次数: 0