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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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Incorporation of the Virtual Gate Effect and Consequences of its Neglect in the Simulation of ON-State $pmb{I}_{pmb{D}}-pmb{V}_{pmb{DS}}$ Curves of AlGaN/GaN HEMTs AlGaN/GaN HEMTs ON-State $pmb{I}_{pmb{D}}-pmb{V}_{pmb{DS}}$曲线仿真中的虚门效应及其忽略后果
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551113
Pradeep Dasari, C. Sharma, S. Karmalkar
{"title":"Incorporation of the Virtual Gate Effect and Consequences of its Neglect in the Simulation of ON-State $pmb{I}_{pmb{D}}-pmb{V}_{pmb{DS}}$ Curves of AlGaN/GaN HEMTs","authors":"Pradeep Dasari, C. Sharma, S. Karmalkar","doi":"10.1109/BCICTS.2018.8551113","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8551113","url":null,"abstract":"We propose a simple method for incorporating the virtual gate effect present in Aluminum Gallium Nitride (AlGaN) / Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) in numerical simulation of their ON-state current-voltage characteristics. Further, we show that the simulations which match the measured ON-state data neglecting the virtual gate effect end up employing an electron saturation velocity versus gate bias behavior that is qualitatively unphysical.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117032868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 256-Gbps PAM-4 Signal Generator IC in $0.25-mu text{m}$ InP DHBT Technology 一种256gbps的PAM-4信号发生器集成电路
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550977
M. Nagatani, H. Wakita, Teruo Jyo, M. Mutoh, M. Ida, S. Voinigescu, H. Nosaka
{"title":"A 256-Gbps PAM-4 Signal Generator IC in $0.25-mu text{m}$ InP DHBT Technology","authors":"M. Nagatani, H. Wakita, Teruo Jyo, M. Mutoh, M. Ida, S. Voinigescu, H. Nosaka","doi":"10.1109/BCICTS.2018.8550977","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8550977","url":null,"abstract":"This paper presents a 256-Gbps (128-GBaud) four-level pulse amplitude modulation (PAM-4) signal generator (SG) IC fabricated using developed $0.25- mutext{m}$ -emitter-width InP double heterojunction bipolar transistors (DHBTs), which have a peak $f_{text{T}}$ and $f_{max}$ of 460 and 480 GHz, respectively. The IC is based on a 128-GS/s 2-bit R2R-ladder current-steering digital-to-analog converter (DAC) with integrated two 2:1 multiplexer (MUX) functions. Ultrahigh-speed clear PAM-4 signals of up to 256 Gbps (128 GBaud) were successfully generated using this PAM-4 SG IC. To the best of our knowledge, this is the first demonstration of 256-Gbps (128-GBaud) PAM-4 signal generation without any equalization.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126328247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
AC-Stacked Power Amplifier for APT/ET LTE HPUE Applications 用于APT/ET LTE HPUE应用的交流堆叠功率放大器
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8551064
Kazuo Watanabe, Satoshi Tanaka, Masatoshi Hase, Yuuri Honda, Yusuke Tanaka, Satoshi Arayashiki
{"title":"AC-Stacked Power Amplifier for APT/ET LTE HPUE Applications","authors":"Kazuo Watanabe, Satoshi Tanaka, Masatoshi Hase, Yuuri Honda, Yusuke Tanaka, Satoshi Arayashiki","doi":"10.1109/BCICTS.2018.8551064","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8551064","url":null,"abstract":"Mainly due to the increase in the number of corresponding bands, and to the HPUE (High Power User Equipment) operation, the power amplifier for the mobile phone terminal is required to increase the maximum output power and gain at the same time. There are several ways to increase the transmit power, but here we have applied an AC-stacked method that combines the emitter ground transistor and the base ground transistor with the capacitor. By applying this method and prototyping a 2.5 GHz power amplifier module, we achieved a gain of approximately 34 dB and a linear output 29dBm at a 3.4 V supply voltage and confirmed the output of the 31dBm in the ET operation.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126663413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology 基于20纳米InGaAs MOSFET技术的高增益220 - 275 GHz放大器mmic
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI: 10.1109/BCICTS.2018.8550836
A. Tessmann, A. Leuther, F. Heinz, F. Bernhardt, H. Massler
{"title":"High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology","authors":"A. Tessmann, A. Leuther, F. Heinz, F. Bernhardt, H. Massler","doi":"10.1109/BCICTS.2018.8550836","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8550836","url":null,"abstract":"Compact high gain 220 to 275 GHz millimeter wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a metamorphic 20 nm gate length InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. Therefore, an Al2O3/HfO2layer stack was deposited as a gate dielectric directly on top of an $mathbf{In}_{0.8}mathbf{Ga}_{0.2}mathbf{As}$ channel by atomic layer deposition. The gate layout was optimized for millimeter wave and submillimeter wave integrated circuit applications using T-gates and wet chemical recess etching to minimize the parasitic gate capacitances. For a $2times 10 mu text{m}$ gate width transistor, a transit frequency $f_{text{T}}$ of 275 GHz and a record maximum oscillation frequency $f_{max}$ of 640 GHz was extrapolated. A realized three-stage cascode amplifier circuit demonstrated a maximum gain of 21 dB at 263 GHz and a small-signal gain of more than 18 dB between 222 and 274 GHz. The total chip size of the millimeter wave amplifier MMIC was only $0.5times 1.2 mathbf{mm}^{2}$.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115165716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement 基于瞬态s参数测量的考虑陷阱效应的ka波段GaN大信号模型
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-07-12 DOI: 10.1109/BCICTS.2018.8551150
Y. Yamaguchi, Tomohiro Otsuka, M. Hangai, S. Shinjo, T. Oishi
{"title":"Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement","authors":"Y. Yamaguchi, Tomohiro Otsuka, M. Hangai, S. Shinjo, T. Oishi","doi":"10.1109/BCICTS.2018.8551150","DOIUrl":"https://doi.org/10.1109/BCICTS.2018.8551150","url":null,"abstract":"In this paper, a Ka-band large-signal model in consideration of trap effect on non-linear capacitance was proposed. In this model, trap effect was modeled by using trap circuits including the diode, the resistance, and the capacitance. The trap circuit affects non-linear capacitance as well as drain current and transconductance. Moreover, to extract the model parameters in the trap circuit, transient s-parameters were measured. By using transient s-parameters measurement, trap effect on non-linear capacitance including trap time constant can be considered. As the result of verification of the model, the proposed model was in good agreement with the measured data of not only AM-AM but also AM-PM.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131489899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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