Iterative De-Embedding and Extracted Maximum Oscillation Frequency $f_{\text{MAX}}$ in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors
W. Quan, A. Arabhavi, R. Flueckiger, O. Ostinelli, C. Bolognesi
{"title":"Iterative De-Embedding and Extracted Maximum Oscillation Frequency $f_{\\text{MAX}}$ in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors","authors":"W. Quan, A. Arabhavi, R. Flueckiger, O. Ostinelli, C. Bolognesi","doi":"10.1109/BCICTS.2018.8550904","DOIUrl":null,"url":null,"abstract":"InP/GaAsSb DHBTs with varying emitter lengths $\\pmb{L}_{\\text{E}}$, emitter widths WE, and base metal widths $\\pmb{W}_{\\mathbf{B}}$ are characterized to determine their maximum oscillation cutoff frequency $f_{\\text{MAX}}$ using iterative de-embedding in comparison to the standard OPEN-SHORT and SHORT-OPEN de-embedding schemes. With increasing measurement frequencies the OPEN-SHORT and SHORT-OPEN methods become increasingly subject to pathologies in the Mason Unilateral power gain which corrupt the extracted $f_{\\mathbf{MAX}}$. In contrast, iterative de-embedding is free of such complications. In the present work, we characterize the $f_{\\text{MAX}}$ extraction error introduced by the usual de-embedding techniques with respect to iterative de-embedding as a function of DHBT dimensions $\\pmb{L}_{\\mathbf{E}},\\pmb{W}_{\\mathbf{E}}$, and $\\pmb{W}_{\\mathbf{B}}$ to reveal that extracted $\\pmb{f}_{\\mathbf{MAX}}$ values are especially sensitive to the emitter width $\\pmb{W}_{\\mathbf{E}}$. De-embedding errors appear to carry over to extrinsic collector area which sensitively affects $f_{\\text{MAX}}$.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"27 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8550904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
InP/GaAsSb DHBTs with varying emitter lengths $\pmb{L}_{\text{E}}$, emitter widths WE, and base metal widths $\pmb{W}_{\mathbf{B}}$ are characterized to determine their maximum oscillation cutoff frequency $f_{\text{MAX}}$ using iterative de-embedding in comparison to the standard OPEN-SHORT and SHORT-OPEN de-embedding schemes. With increasing measurement frequencies the OPEN-SHORT and SHORT-OPEN methods become increasingly subject to pathologies in the Mason Unilateral power gain which corrupt the extracted $f_{\mathbf{MAX}}$. In contrast, iterative de-embedding is free of such complications. In the present work, we characterize the $f_{\text{MAX}}$ extraction error introduced by the usual de-embedding techniques with respect to iterative de-embedding as a function of DHBT dimensions $\pmb{L}_{\mathbf{E}},\pmb{W}_{\mathbf{E}}$, and $\pmb{W}_{\mathbf{B}}$ to reveal that extracted $\pmb{f}_{\mathbf{MAX}}$ values are especially sensitive to the emitter width $\pmb{W}_{\mathbf{E}}$. De-embedding errors appear to carry over to extrinsic collector area which sensitively affects $f_{\text{MAX}}$.