2018 76th Device Research Conference (DRC)最新文献_第3页

2D Electronic Devices I 2D电子装置I

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/drc.2018.8442182

引用次数: 0

Flexible Thin-Film PZT Ultrasonic Transducers 柔性薄膜PZT超声换能器

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442177

Tianning Liu, Jeong Nyeon Kim, S. Trolier-McKinstry, T. Jackson

引用次数: 3

Integrated Optoelectronics Devices 集成光电子器件

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/drc.2018.8442251

引用次数: 0

Novel 2-D Materials for Tunneling FETs: an Ab-initio Study 隧道效应场效应管新型二维材料的从头算研究

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442268

C. Klinkert, Á. Szabó, D. Campi, C. Stieger, N. Marzari, M. Luisier

{"title":"Novel 2-D Materials for Tunneling FETs: an Ab-initio Study","authors":"C. Klinkert, Á. Szabó, D. Campi, C. Stieger, N. Marzari, M. Luisier","doi":"10.1109/DRC.2018.8442268","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442268","url":null,"abstract":"An excellent electrostatic control has been early on identified as one of the most critical ingredients to build band- to- band tunneling field-effect transistors (TFETs) with a steep sub-threshold swing (SS) and a high ON-current (ION) [1]. These essential features can be obtained by reducing the thickness of ultra-thin-body structures or the diameter of nanowires. Two-dimensional materials, especially their single-layer (SL) configuration, represent a promising alternative to conventional semiconductors due to their intrinsic sub-1nm thickness. Indeed, a TFET implementing an atomically thin MoS2 channel combined with a Ge layer was recently shown to exhibit a less than 60 mV/dec SS over several orders of magnitude and a decent ION[2]. In this experiment, however, MoS2 had to be grouped with Ge to achieve the desired goal, thus raising the question whether 2-D materials alone can provide a suitable platform for high performance TFETs. Various theoretical studies based on empirical tight-binding models and focusing on SL transition metal dichalcogenides (TMDs) [3] and black phosphorus [4] have come to the conclusion that these compounds, in particular WTe2, could deliver ON-currents larger than $100 mumathrm{A}/mumathrm{m}$ at a supply voltage $V_{DD}=0.5 mathrm{V}$ and OFF-current $I_{OFF}=1 mathrm{nA}/mumathrm{m}$. Here, by employing an ab-initio quantum transport simulator, we will demonstrate that none of the usual TMDs reaches a $I_{ON} > > 10 mumathrm{A}/mumathrm{m}$, contrary to recently discovered 2-D materials [5] that could pave the way for future, highly efficient TFETs.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130842464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching 采用选择性GaN蚀刻技术，实现了一种均匀且可重复的大面积低色散GaN-on- si正常关断600 V晶体管技术

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442144

P. Waltereit, M. Preschle, S. Muller, L. Kirste, H. Czap, J. Ruster, M. Dammann, R. Reiner

引用次数: 6

3 Gbps Free Space Optical Link based on Integrated Indium Phosphide Transmitter 基于集成磷化铟发射机的3gbps自由空间光链路

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442252

Hongwei Zhao, S. Pinna, B. Song, L. Megalini, S. Brunelli, L. Coldren, J. Klamkin

{"title":"3 Gbps Free Space Optical Link based on Integrated Indium Phosphide Transmitter","authors":"Hongwei Zhao, S. Pinna, B. Song, L. Megalini, S. Brunelli, L. Coldren, J. Klamkin","doi":"10.1109/DRC.2018.8442252","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442252","url":null,"abstract":"In the last half century, advances in radio frequency (RF) and microwave technology have paved the way for space communications. Then in 2013, NASA demonstrated a two-way laser link between earth and a satellite in lunar orbit over 239,000 miles at a data rate of 622 Mbps, which is more than six times faster than previous state-of-the-art radio systems deployed to the moon [1]. The free space optical systems can be assembled with commercial-off-the-shelf(COTS) components. However, for deployment on small spacecraft, lower cost, size, weight and power (CSWaP) is required, while still demonstrating high output optical power and power-efficient modulation formats [2]. The indium phosphide (InP) photonic integrated circuit (PIC) platform is attractive for free space links since it enables complex single-chip implementations of advanced transmitters and receivers [3]–[5]. In this work, a free space optical link based on an InP PIC transmitter has been demonstrated. The transmitter is tunable from 1521 nm to 1565 nm, covering the entire C band. Error-free operation was achieved at 3 Gbps for an equivalent link length of 180 m (up to 300 m with forward error correction), and this distance can scale with the use of a high-power amplifier at the output.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123883196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Localized Heating in Mo'I'ei-Based Resistive Memory Devices 基于Mo'I'ei的电阻式存储器件的局部加热

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442153

I. Datye, M. Muñoz-Rojo, E. Yalon, M. Mleczko, E. Pop

引用次数: 0

Spin-based majority gates for logic applications 用于逻辑应用的自旋多数门

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442271

I. Radu

引用次数: 0

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage 具有10-A正向电流和1.6 kV击穿电压的垂直GaN-on-GaN p-n二极管

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442215

Jingshan Wang, Lina Cao, Jinqiao Xie, E. Beam, C. Youtsey, R. McCarthy, L. Guido, P. Fay

{"title":"Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage","authors":"Jingshan Wang, Lina Cao, Jinqiao Xie, E. Beam, C. Youtsey, R. McCarthy, L. Guido, P. Fay","doi":"10.1109/DRC.2018.8442215","DOIUrl":"https://doi.org/10.1109/DRC.2018.8442215","url":null,"abstract":"The gallium nitride (GaN) material system has become one of the most promising material systems for high efficiency power switching applications due to its unique material properties, including a wide band gap, high critical electric field, and large mobility and saturation electron velocity. For high voltage, high current applications, vertical device structures on bulk GaN substrates are especially promising [1]. Although the ability to scale the devices to large absolute currents is critical for power electronics, to date the current-carrying capability of many demonstrated devices has fallen short of theoretical expectations due to non-idealities in device area scaling. High performance vertical GaN-on-GaN p-n diodes using N ion-implantation edge termination incorporating a partially-compensated layer were demonstrated to achieve breakdown voltages of 1.2 kV, and both the reverse and forward current densities were found to scale well with area [2]. In this work, a device structure designed for higher breakdown operation was explored, and devices with a range of areas were fabricated and tested under high-current drive conditions. Peak forward currents approaching 10 A at a forward voltage of 5.3 V were obtained for typical $550 mu mathrm{m}$ diameter GaN-on-GaN p-n diodes having a breakdown voltage of 1.6 kV.","PeriodicalId":269641,"journal":{"name":"2018 76th Device Research Conference (DRC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126981432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

WSe2/ReS2 vdW Heterostructure for Versatile Optoelectronic Applications 多用途光电应用的WSe2/ReS2 vdW异质结构

2018 76th Device Research Conference (DRC) Pub Date : 2018-06-01 DOI: 10.1109/DRC.2018.8442236

Abin Varghese, Denis Joseph, Sayantani Ghosh, Kartikey Thakar, Nikhil Mcdhckar, S. Lodha

引用次数: 4