Proceedings of 8th International Conference on Indium Phosphide and Related Materials最新文献_第5页

1.3-/spl mu/m laser diodes with spot-size converter for access networks 1.3-/spl μ /m激光二极管，带点尺寸转换器，用于接入网

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492261

M. Yamamoto, Y. Itaya, T. Sugie

引用次数: 7

Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs AlSb/InAs hemt的Pd/Pt/Au和AuGe/Ni/Pt/Au欧姆触点

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492255

J. B. Boos, W. Kruppa, Doe Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, J. Mittereder

引用次数: 5

Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma 含氨DECR等离子体的InGaAs表面钝化工艺研究

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492043

B. Lescaut, Y.I. Nissim, J.F. Bresse

{"title":"Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma","authors":"B. Lescaut, Y.I. Nissim, J.F. Bresse","doi":"10.1109/ICIPRM.1996.492043","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492043","url":null,"abstract":"Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An integrated process using a combination of surface cleaning and photochemical dielectric encapsulation is proposed for passivation. The passivation of InGaAs layer has been tempted using a surface cleaning processing in a distributed electron cyclotron resonant multipolar microwave plasma (DECR MMP). In-situ photoemission, ex-situ luminescence and MIS electrical measurements have been utilised to fully characterize the treatment. A substantial increase of surface luminescence signal is observed for an ammonia optimised plasma process. An Auger analysis brought some information about the cleaning mechanism. Namely carbon and oxygen are trapped in a thin gallium nitride film that is formed on the surface. This film can be easily removed from the surface. A UV silicon nitride film is then deposited on this ultra clean surface to stabilise the electronic properties without introducing any more contamination or defects. The resulting C(V) and I(V) measurement made on the protected surface are among the best ever reported for InGaAs surfaces.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115008380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH/sub 4//H/sub 2/ CH/sub /H/sub / 2/反应离子刻蚀过程中inp基光电器件的表面和侧壁损伤

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491948

T. Bottner, H. Krautle, E. Kuphal, K. Miethe, H. Hartnagel

{"title":"Surface- and sidewall-damage of InP-based optoelectronic devices during reactive ion etching using CH/sub 4//H/sub 2/","authors":"T. Bottner, H. Krautle, E. Kuphal, K. Miethe, H. Hartnagel","doi":"10.1109/ICIPRM.1996.491948","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491948","url":null,"abstract":"Systematic investigations are performed on the effect of reactive ion etching (RIE) using CH/sub 4//H/sub 2/ based gases on InP based semiconductors. From rutherford backscattering analysis a strong dependence of crystalline damage on process parameters is found leading to a damaged region of less than 3 nm for an optimized process. Capacitance voltage profiling shows the effect of hydrogen channeling up to 0.5 /spl mu/m deep into the semiconductor creating acceptor passivation which can be completely removed by annealing at low temperature. Using low temperature photoluminescence measurements on multiquantumwell structures, it is shown that the RIE process does not affect photoluminescence properties of quantum wells remarkably until the covering barrier is etched down to few nm. From these measurements a damage model of the etched semiconductor surface is presented. Sidewall damage of RIE etched InGaAs/InP Mesa-PIN-diodes is characterized by analyzing surface leakage currents. Furthermore, effects of different post-etch treatments on leakage currents are shown. By an optimized CH/sub 4//H/sub 2//Ar-RIE process PIN-photodiodes are fabricated with dark current densities as low as 1.8/spl times/10/sup -5/ A cm/sup -2/ (bias voltage is -5 V) which are comparable to the best published wet etched Mesa-PIN-photodiodes.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121225833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Large-signal HEMT modelling, specifically optimized for InP based HEMTs 大信号HEMT建模，专门针对基于InP的HEMT进行优化

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492330

D. Schreurs, Y. Baeyens, K. van der Zanden, J. Verspecht, M. Van Hove, W. De Raedt, B. Nauwelaers, M. Van Rossum

引用次数: 8

Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures 气体开关顺序对MOVPE InGaAs/InP超晶格结构质量影响的研究

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492293

W. Strupinski, M. Czub, J. Gaca, M. Wójcik

引用次数: 3

Proposal of new narrow-band wavelength filter using grating-assisted vertical contra-directional coupler 采用光栅辅助垂直反向耦合器的新型窄带波长滤波器的设计

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492019

S. Tanaka, K. Utaka, T. Yamamoto, M. Horita, Y. Matsusbima

引用次数: 5

Resonant tunneling heterojunction bipolar transistors and their applications in high functionality/speed digital circuits 谐振隧道异质结双极晶体管及其在高功能/高速数字电路中的应用

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.491952

G. Haddad

引用次数: 5

Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers 20gb /s光电接收机用InAlAs/InGaAs/InP-HFET低阻抗行波放大器的研制

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492331

S. van Waasen, G. Janssen, R. Bertenburg, R. Reuter, F. Tegude

{"title":"Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers","authors":"S. van Waasen, G. Janssen, R. Bertenburg, R. Reuter, F. Tegude","doi":"10.1109/ICIPRM.1996.492331","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492331","url":null,"abstract":"The applicability of the transimpedance amplifier for optoelectronic receivers becomes doubtful for bit rates higher than 20 Gb/s. So recently the traveling wave amplifier (TWA) concept for high bit rate receiver systems is of increasing interest because it is the preferred amplifier concept for broadband applications like hierarchically organized communication interlinks. TWAs usually are designed with an input and output impedance of 50 /spl Omega/. Thus a main problem of the TWA-concept for an optoelectronic receiver is matching the photo-detector (PD) and the TWA input and reach the requested input RC-bandwidth. The conventional approach is a TWA with an additional 50 /spl Omega/ match resistor at the input line, which has to be integrated directly into the PD itself in order to avoid parasitics. The aim of this paper is to present an alternative concept to the match resistor realized by a TWA with a low-impedance input (25 /spl Omega/), which yields significantly reduced design and fabrication efforts. All simulations for the investigated and optimized designs of the TWA in coplanar technique have been carried out using a commercially available software. For exact noise and sensitivity simulations, an extended temperature noise model (TNM) for heterostructure field-effect transistors was developed and implemented. Finally a comparison with measurement results of the realized TWA is presented.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130382016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Electroluminescence measurement of InAlAs/InGaAs HEMTs lattice-matched to InP substrates 与InP衬底晶格匹配的InAlAs/InGaAs HEMTs的电致发光测量

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492385

N. Shigekawa, Takatomo Enoki, Tomofumi Furuta, Hiroshi Ito

引用次数: 6