Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures

Abstract

The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen.