{"title":"Resonant tunneling heterojunction bipolar transistors and their applications in high functionality/speed digital circuits","authors":"G. Haddad","doi":"10.1109/ICIPRM.1996.491952","DOIUrl":null,"url":null,"abstract":"Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Resonant tunneling heterojunction bipolar transistors (RTBT's) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications.