气体开关顺序对MOVPE InGaAs/InP超晶格结构质量影响的研究

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492293

W. Strupinski, M. Czub, J. Gaca, M. Wójcik

{"title":"气体开关顺序对MOVPE InGaAs/InP超晶格结构质量影响的研究","authors":"W. Strupinski, M. Czub, J. Gaca, M. Wójcik","doi":"10.1109/ICIPRM.1996.492293","DOIUrl":null,"url":null,"abstract":"The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures\",\"authors\":\"W. Strupinski, M. Czub, J. Gaca, M. Wójcik\",\"doi\":\"10.1109/ICIPRM.1996.492293\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492293\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

MOVPE异质结构的生长，特别是当单层厚度为几个ML数量级时，对界面过渡区的结构质量要求很高。原子尺度上被称为界面粗糙度的结构紊乱以及与交换和结转过程相关的合金波动决定了最终的器件参数。本文从化学成分的角度研究了InP/InGaAs/InP的生长参数与界面理想度之间的关系。在不同的评价界面特性的技术中，如PL、CL、HTEM，选择了x射线法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures

The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

自引率

0.00%

发文量