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1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings最新文献

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A new bipolar magnetotransistor with combined phenomena of carrier deflection and emitter injection modulation 具有载流子偏转和发射极注入调制现象的新型双极磁晶体管
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557314
O. Neagoe, M. Avram
{"title":"A new bipolar magnetotransistor with combined phenomena of carrier deflection and emitter injection modulation","authors":"O. Neagoe, M. Avram","doi":"10.1109/SMICND.1996.557314","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557314","url":null,"abstract":"The paper presents the project, fabrication and experimental results of a new dual-collector bipolar magnetotransistor. Two major operating principles such as the emitter injection modulation and the carrier deflection are reported a special design causes the variation of the device active area due to the carrier deflection in the base region so that a large collector current difference may result.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130736210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Optimization of the silicon-based tunnel MIS structures as hot electron injectors 热电子注入器用硅基隧道MIS结构的优化
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557391
I. Grekhov, A.F. Shulekin, M. Vexler
{"title":"Optimization of the silicon-based tunnel MIS structures as hot electron injectors","authors":"I. Grekhov, A.F. Shulekin, M. Vexler","doi":"10.1109/SMICND.1996.557391","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557391","url":null,"abstract":"Hot-electron Auger ionization in Al/tunnel-thin oxide/silicon structures was shown to be used most efficiently in the devices with high n-substrate doping (Nd) and/or relatively large insulator thickness. The structures with high Nd were also found to be quite appropriate for observation of electroluminescence.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"41 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133833089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoconductivity, luminescence and optical absorption of WS/sub 2/ crystals WS/ sub2 /晶体的光电导率、发光及光吸收
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557463
E. Arushanov, E. Bucher, K. Friemelt, O. Kulikova, L. Kulyuk, A. Nateprov, A. Siminel
{"title":"Photoconductivity, luminescence and optical absorption of WS/sub 2/ crystals","authors":"E. Arushanov, E. Bucher, K. Friemelt, O. Kulikova, L. Kulyuk, A. Nateprov, A. Siminel","doi":"10.1109/SMICND.1996.557463","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557463","url":null,"abstract":"For the first time the photoluminescence of the tungsten disulphide 2H-polytype single crystals have been observed and the photoconductivity spectra in the region of indirect transition have been investigated. The analysis of the experimental data has been performed taking into account the band structure of 2H-WS/sub 2/ layered crystals.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"253 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134324356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Doping-restructuration process during phosphorus diffusion in polysilicon layers on silicon 磷在硅上多晶硅层中扩散的掺杂-重构过程
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557410
F. Găiseanu, D. Kruger, J. Stoemenos, C. Dimitriadis, C. Postalache, H. Richter, W. Schroter, M. Seibt
{"title":"Doping-restructuration process during phosphorus diffusion in polysilicon layers on silicon","authors":"F. Găiseanu, D. Kruger, J. Stoemenos, C. Dimitriadis, C. Postalache, H. Richter, W. Schroter, M. Seibt","doi":"10.1109/SMICND.1996.557410","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557410","url":null,"abstract":"TEM, spreading resistance and SIMS investigations of LP-CVD polysilicon layers deposited at 620/spl deg/C on a Si substrate, doped by P prediffusion at 900/spl deg/C and subsequently annealed at temperatures in the range 900/spl deg/C-1000/spl deg/C, allow the authors to propose a doping-restructuration mechanism based on the self-interstitial injection during the P diffusion.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132764967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monte Carlo hardware simulator for electron dynamics in semiconductors 半导体电子动力学的蒙特卡罗硬件模拟器
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557443
A. Negoi, J. Zimmermann
{"title":"Monte Carlo hardware simulator for electron dynamics in semiconductors","authors":"A. Negoi, J. Zimmermann","doi":"10.1109/SMICND.1996.557443","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557443","url":null,"abstract":"An integrated circuit dedicated to the simulation of a charged particle in a semiconductor using the Monte Carlo method is presented. This circuit should be the basis building block of a semiconductor device hardware simulator. We detail the various phases of the physical processes involved and how to transfer them in terms of circuit architectures. The CAD tool used was Alliance 3.0. We present the very first practical realization based on a FPGA.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115169860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Integration techniques for high frequency bipolar circuits 高频双极电路的集成技术
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557378
M. Badila, S. Negru, F. Mitu, G. Brezeanu, G. Dilimot, I. Enache
{"title":"Integration techniques for high frequency bipolar circuits","authors":"M. Badila, S. Negru, F. Mitu, G. Brezeanu, G. Dilimot, I. Enache","doi":"10.1109/SMICND.1996.557378","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557378","url":null,"abstract":"An integration technique for high frequency bipolar circuits is presented. A Gilbert cell and an amplifier with a bandwidth of 700 MHz and minimum 2 V supply voltage has been integrated. The circuits content npn transistors with 16 GHz cutoff frequency and BV/sub CBO/>15 V.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123487562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Stress and strain in automotive diodes-a RVT, IR and XR study 汽车二极管的应力和应变——RVT, IR和XR研究
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557414
L. Galateanu, M. Stoica, C. Bozdog, E. Popa, A. Stoica
{"title":"Stress and strain in automotive diodes-a RVT, IR and XR study","authors":"L. Galateanu, M. Stoica, C. Bozdog, E. Popa, A. Stoica","doi":"10.1109/SMICND.1996.557414","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557414","url":null,"abstract":"The methods of achieving the needed reliability for the automotive rectifier CAN diodes are discussed. The RVT tool needed for investigation was found, a new stress relief shape was designed and IR and XR investigations were performed toward the complete elimination of the residual strain left behind the grinding and diffusion processes. An IR method of the rough surface layer characterization is for the first time employed and the optical configuration for XR experiments was improved in angular resolution.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121238204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Thermal stability of Se/CdSe multilayers Se/CdSe多层膜的热稳定性
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557384
M. Popescu, F. Sava, A. Lőrinczi, P. Koch, T. Gutberlet, W. Uebach, H. Bradaczek, E. Vateva, D. Nesheva
{"title":"Thermal stability of Se/CdSe multilayers","authors":"M. Popescu, F. Sava, A. Lőrinczi, P. Koch, T. Gutberlet, W. Uebach, H. Bradaczek, E. Vateva, D. Nesheva","doi":"10.1109/SMICND.1996.557384","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557384","url":null,"abstract":"The structure and the thermal stability of amorphous Se/CdSe multilayers have been investigated by X-ray diffraction. The multilayers are stable up to 60/spl deg/C. During thermal treatment firstly hexagonal selenium and then hexagonal CdSe phase are gradually separated.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121978809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling base transport properties of npn SiGe HBT 模拟npn SiGe HBT的基输运特性
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557367
S. Sokolic, S. Amon
{"title":"Modelling base transport properties of npn SiGe HBT","authors":"S. Sokolic, S. Amon","doi":"10.1109/SMICND.1996.557367","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557367","url":null,"abstract":"The modelling of the collector current and the base transit time in npn SiGe HBT is presented. The evaluation of minority electron concentration in the base and its dependence on doping concentration, temperature and Ge content is discussed in detail. It is shown that Ge-induced performance improvement of SiGe HBTs compared to Si BJTs is lowered at high doping concentrations in the base due to invalidity of Boltzmann statistics, which is more influential in SiGe due to lower hole effective mass.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131304587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical and photoelectrical properties of glassy As/sub 2/Se/sub 3/ doped with Mn, Dy and Sm 掺杂Mn、Dy和Sm的As/sub / 2/Se/sub / 3玻璃材料的电学和光电特性
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI: 10.1109/SMICND.1996.557392
M. Iovu, A. Andriesh, S. Shutov, M. G. Bulgaru, M. Popescu, F. Sava, A. Lőrinczi
{"title":"Electrical and photoelectrical properties of glassy As/sub 2/Se/sub 3/ doped with Mn, Dy and Sm","authors":"M. Iovu, A. Andriesh, S. Shutov, M. G. Bulgaru, M. Popescu, F. Sava, A. Lőrinczi","doi":"10.1109/SMICND.1996.557392","DOIUrl":"https://doi.org/10.1109/SMICND.1996.557392","url":null,"abstract":"The chalcogenide glassy semiconductor As/sub 2/Se/sub 3/ doped with Mn, Dy and Sm presents practical interest for optoelectronic devices. Doping by metals influences electrical conductivity and photoelectric characteristics. The conductivity is significantly increased by addition of Mn and Dy impurities. All the dopants hamper the photoconductivity with exception of 0.5 at.% Dy, which generates a broad impurity band in the photoconductivity spectrum near 1.05 eV, ascribed to the presence of a small amount of finely dispersed crystalline phase.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129038260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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