M. Iovu, A. Andriesh, S. Shutov, M. G. Bulgaru, M. Popescu, F. Sava, A. Lőrinczi
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Electrical and photoelectrical properties of glassy As/sub 2/Se/sub 3/ doped with Mn, Dy and Sm
The chalcogenide glassy semiconductor As/sub 2/Se/sub 3/ doped with Mn, Dy and Sm presents practical interest for optoelectronic devices. Doping by metals influences electrical conductivity and photoelectric characteristics. The conductivity is significantly increased by addition of Mn and Dy impurities. All the dopants hamper the photoconductivity with exception of 0.5 at.% Dy, which generates a broad impurity band in the photoconductivity spectrum near 1.05 eV, ascribed to the presence of a small amount of finely dispersed crystalline phase.
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