A new bipolar magnetotransistor with combined phenomena of carrier deflection and emitter injection modulation

Abstract

The paper presents the project, fabrication and experimental results of a new dual-collector bipolar magnetotransistor. Two major operating principles such as the emitter injection modulation and the carrier deflection are reported a special design causes the variation of the device active area due to the carrier deflection in the base region so that a large collector current difference may result.