{"title":"模拟npn SiGe HBT的基输运特性","authors":"S. Sokolic, S. Amon","doi":"10.1109/SMICND.1996.557367","DOIUrl":null,"url":null,"abstract":"The modelling of the collector current and the base transit time in npn SiGe HBT is presented. The evaluation of minority electron concentration in the base and its dependence on doping concentration, temperature and Ge content is discussed in detail. It is shown that Ge-induced performance improvement of SiGe HBTs compared to Si BJTs is lowered at high doping concentrations in the base due to invalidity of Boltzmann statistics, which is more influential in SiGe due to lower hole effective mass.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modelling base transport properties of npn SiGe HBT\",\"authors\":\"S. Sokolic, S. Amon\",\"doi\":\"10.1109/SMICND.1996.557367\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The modelling of the collector current and the base transit time in npn SiGe HBT is presented. The evaluation of minority electron concentration in the base and its dependence on doping concentration, temperature and Ge content is discussed in detail. It is shown that Ge-induced performance improvement of SiGe HBTs compared to Si BJTs is lowered at high doping concentrations in the base due to invalidity of Boltzmann statistics, which is more influential in SiGe due to lower hole effective mass.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557367\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557367","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modelling base transport properties of npn SiGe HBT
The modelling of the collector current and the base transit time in npn SiGe HBT is presented. The evaluation of minority electron concentration in the base and its dependence on doping concentration, temperature and Ge content is discussed in detail. It is shown that Ge-induced performance improvement of SiGe HBTs compared to Si BJTs is lowered at high doping concentrations in the base due to invalidity of Boltzmann statistics, which is more influential in SiGe due to lower hole effective mass.
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