2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献

In-line characterization of EDRAM for a FINFET technology using VC inspection 用VC检测技术在线表征EDRAM的FINFET技术

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-06-16 DOI: 10.1109/ASMC.2016.7491150

O. Patterson, R. Hafer, S. Mittal, Ankur Arya, K. Stein, H. Ho, William Davies, Xiaohu Tang, Brian Yueh-Ling Hsieh, Shuen-Cheng Chris Lei

{"title":"In-line characterization of EDRAM for a FINFET technology using VC inspection","authors":"O. Patterson, R. Hafer, S. Mittal, Ankur Arya, K. Stein, H. Ho, William Davies, Xiaohu Tang, Brian Yueh-Ling Hsieh, Shuen-Cheng Chris Lei","doi":"10.1109/ASMC.2016.7491150","DOIUrl":"https://doi.org/10.1109/ASMC.2016.7491150","url":null,"abstract":"An E-beam voltage contrast inspection methodology involving multiple inspection points has been created to support development of the EDRAM module for a recent FINFET technology. This methodology provides within-sector feedback for a wide range of defect types enabling fast turn-around of split experiments and early detection of process excursions. Most defectivity affecting EDRAM is buried and therefore not detectable with broad beam plasma inspection. The EDRAM module is first in the process sequence for this FINFET technology. Without E-beam inspection, the first opportunity for defectivity feedback would be metal 1 test, which is months later in the process sequence. While direct E-beam inspection of functional EDRAM is a key part of this methodology, many defect types cannot be detected directly on functional SRAM. Special voltage contrast test structures were designed to monitor these defect types. The key defect types and the strategy used to detect each of them is described in detail in this paper. Select split experiment and process excursion data are used to illustrate the impact of the methodology.","PeriodicalId":264050,"journal":{"name":"2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"7 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120886630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Yield improvement and queue time relaxation at contact process 接触过程成品率的提高和排队时间的松弛

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-06-16 DOI: 10.1109/ASMC.2016.7491163

Nitin Garg, Philippe Helal, P. Muralidhar, S. Crown, Vincent Sih, S. Waite, Silas Scott

引用次数: 2

Dispatching rules considering transport-related restrictions during failure scenarios — A use case: FA: Factory automation 在故障场景中考虑运输相关限制的调度规则——一个用例:FA:工厂自动化

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-06-16 DOI: 10.1109/ASMC.2016.7491110

Robert Schmaler, C. Hammel, T. Schmidt, Matthias Schöps

引用次数: 2

Improvement of hydrogen detection limit for quadruple SIMS tool 四联SIMS仪器氢检出限的改进

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491119

Z. Zhang, B. Hengstebeck, F. Stevie, M. Hopstaken

引用次数: 0

Extra-pattern killer defectivity improvement and enhancement of within-feature barrier coverage by optimization of TaN barrier PVD process in 90p Cu wire interconnects for 28nm technology 通过优化TaN势垒PVD工艺改善28nm 90p铜线互连中的超模式杀手缺陷和增强特征内屏障覆盖

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491165

B. Rajagopalan, J. Laloe, M. Silvestre, E. Ramanathan, Sohana Khanal, Alain Laval, Q. Ge, N. Takahashi, A. S. Mahalingam, S. L. Liew, Robert Teagle

{"title":"Extra-pattern killer defectivity improvement and enhancement of within-feature barrier coverage by optimization of TaN barrier PVD process in 90p Cu wire interconnects for 28nm technology","authors":"B. Rajagopalan, J. Laloe, M. Silvestre, E. Ramanathan, Sohana Khanal, Alain Laval, Q. Ge, N. Takahashi, A. S. Mahalingam, S. L. Liew, Robert Teagle","doi":"10.1109/ASMC.2016.7491165","DOIUrl":"https://doi.org/10.1109/ASMC.2016.7491165","url":null,"abstract":"The BEOL Barrier-Seed deposition process is a key component in achieving the desired electrical and electro-migration performance while balancing the step coverage. The process also has a multifold impact on wafer yield parametric since it serves multiple passes for the various metal levels. Two major challenges with the barrier sputter deposition are: (A) achieving optimal within-feature barrier coverage while balancing resistance parameters; (B) flake defectivity — the process is prone to flake defectivity due to inherent adhesive properties of nitride films. Several different parameters play a role in dictating the quality and quantity of the barrier film that is being deposited. This paper analyzes the impact of one such critical parameter — the AC bias during barrier deposition to modulate the chamfer coverage and the electrical Via-resistance. Furthermore it elucidates the methodology of addressing the source of massive killer flakes that cause severe pattern damage that act as \"killer\" defects for the dies. Post implementation of the changes discussed, the massive defects of interest that were sourced from the sputter process were completely eliminated. A detailed study supported by electrical and cross-sectional analysis allowed zeroing in on the optimal Bias power to derive the best possible chamfer stability while being able to achieve a lower Via-resistance as desired.","PeriodicalId":264050,"journal":{"name":"2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115435604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Multiple in/Multiple out, run to run controller for accurate and stable epitaxy processes: APC: Advanced process control 多输入/多输出，运行到运行控制器，用于精确和稳定的外延过程:APC:先进的过程控制

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491121

R. Benjamin, Lippl Gerhard, Lipp Stefan

引用次数: 1

Develop gap-fill process of shallow trench isolation in 450mm wafer by advanced Flowable CVD technology for sub-20nm node 采用先进的可流动气相沉积技术，在450mm晶圆上开发了20nm以下节点的浅沟槽隔离补隙工艺

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491115

Min-Hui Chen, Stock Chang

引用次数: 1

450mm PVD MHM TiN process development and process chamber evaluation using DC power system 采用直流电源系统的450mm PVD MHM TiN工艺开发及工艺室评价

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491114

Barry Wang, M. H. Chen, J. H. Xie, Stock Chang

{"title":"450mm PVD MHM TiN process development and process chamber evaluation using DC power system","authors":"Barry Wang, M. H. Chen, J. H. Xie, Stock Chang","doi":"10.1109/ASMC.2016.7491114","DOIUrl":"https://doi.org/10.1109/ASMC.2016.7491114","url":null,"abstract":"There are many excellent film properties of Titanium Nitride, such as high hardness, high corrosion resistance, good conductivity, low friction coefficient and a bright, golden color. In the past couple of years, it has been always used as barrier layer to inhibit diffusion of Al and Cu. In the most advance technology nodes, such as 20 nm, 16 nm and below, the metal hard mask (MHM) layer is necessary for better etching profile and less PR budget. Titanium Nitride has been used in BEOL (back-end of line) as MHM because of its film properties. In 450mm generation, cost saving and good productivity are the most important key factors. In this generation, we use DC power system as process chamber, and increase DC power to improve deposition rate. It will be a win-win approach to improve productivity and reduce cost. However, increasing DC power will transit stress in TiN to high compressive level. It will induce pattern wiggling. On the other hand, the U% of thickness is also considered at the same time. Faster deposition rate always induce worse U%. In order to get the best productivity and still have good stress and thickness U%, we study some solutions to develop 450mm PVD MHM TiN process and chamber evaluation by using DC power system.","PeriodicalId":264050,"journal":{"name":"2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"12 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132530174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Copper process control with picosecond ultrasonic technology: A study 皮秒超声技术对铜工艺控制的研究

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491144

S. L. Manikonda, M. Medikonda, S. Patel, A. Bello, Jun Song, P. Mukundhan

引用次数: 0

Reliability assessment of anodic films under plasma etching process 等离子体腐蚀阳极膜的可靠性评价

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491133

Je-Boem Song, Jin-Tae Kim, Seung-Su Lee, Seong-Geun Oh, E. Oh, J. Yun

引用次数: 0