2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献_第2页

Management of crisis situations in a large unified AMHS of a semiconductor manufacturing facility: IE: Industrial engineering 在半导体制造工厂的大型统一AMHS中的危机情况管理:工业工程

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491112

M. Ndiaye, S. Dauzére-Pérés, C. Yugma, Lionel Rulliere, Gilles Lamiable

引用次数: 3

Process window discovery methodology development for advanced lithography 先进光刻工艺窗口发现方法的开发

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491105

D. van den Heuvel, P. Foubert, B. Baudemprez, A. Lee, A. Cross, Kaushik Sah, Naoshin Haque, P. Parisi, O. Baris

{"title":"Process window discovery methodology development for advanced lithography","authors":"D. van den Heuvel, P. Foubert, B. Baudemprez, A. Lee, A. Cross, Kaushik Sah, Naoshin Haque, P. Parisi, O. Baris","doi":"10.1109/ASMC.2016.7491105","DOIUrl":"https://doi.org/10.1109/ASMC.2016.7491105","url":null,"abstract":"With the continued need for shrinking patterning dimensions in semiconductor manufacturing, new lithography techniques, such as advanced multi-patterning, are being introduced into production for 10nm node and beyond, and others, such as EUV, are nearing production requirements. Previous work [1] has shown that these new developments introduce new challenges in terms of qualifying the process window. In the past the boundaries of the overlapping process window (focus and exposure latitude in which all structures in a given layout print within the specifications) were mainly defined by design and OPC related systematic defects and lithographers and defect engineers were relying on Process Window Qualification (PWQ) methods to discover these systematic defects. In more advanced nodes however, the process window is also impacted by FAB related sources (wafer non-uniformity, process variations) or, in case of multi-patterning schemes, also by interactions between the different masks. To take these factors into account PWQ has now evolved into a new methodology called Process Window Discovery (PWD). This paper will focus on further development of this methodology. We will further focus on techniques to enhance the sensitivity of the broadband plasma defect inspection and we will demonstrate how this metrology can highlight intra-field and across-wafer variations. The final step of this work will be to implement this methodology to compare the overlapping process windows of two identical metal layers with 2D logic patterns, of which one layer will be patterned with EUV single patterning and the other will be patterned with 193i triple litho-etch patterning (LE3). For 193i LE3 a special focus goes on the detection of overlay critical hotspots and defining the overlay variation related process window. For EUV special attention goes to EUV specific hotspots and typical sources of variations across wafer.","PeriodicalId":264050,"journal":{"name":"2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":" 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120829947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Investigation on critical thickness dependence of ALD TiN diffusion barrier in MOL ALD - TiN扩散势垒在MOL中临界厚度依赖性的研究

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491156

A. Subramaniyan, Domingo Ferrer Luppi, N. Makela, L. Bauer, A. Madan, R. Murphy, F. Baumann, Kriti Kohli, C. Parks

{"title":"Investigation on critical thickness dependence of ALD TiN diffusion barrier in MOL","authors":"A. Subramaniyan, Domingo Ferrer Luppi, N. Makela, L. Bauer, A. Madan, R. Murphy, F. Baumann, Kriti Kohli, C. Parks","doi":"10.1109/ASMC.2016.7491156","DOIUrl":"https://doi.org/10.1109/ASMC.2016.7491156","url":null,"abstract":"Titanium nitride (TiN), a refractory material is actively been used as a diffusion barrier in Middle-of-the-Line (MOL) contacts. In the typical MOL stack (titanium (Ti)/TiN/tungsten(W)), it acts as a fluorine (F) diffusion barrier and also as an adhesion layer to W. During W deposition, F from W precursor chemistry can react with Ti to form a highly resistive titanium fluoride (TiFx) compound. The formation of TiFx creates >200% volume expansion which can result in cracks on the TiN layer or W delamination. In order to be an effective diffusion barrier layer, TiN has to be dense which demands a critical thickness. In this work, we study the materials properties of ALD TiN as a function of thickness in the range 11-35 Â. We found a linear increase in resistivity of TiN on Ti with thickness. Columnar structured microstructure was observed for TiN films with thickness 30.4 and 34.7 Â. These films were also found to be slightly denser. TEM electron diffraction indicated that the 34.7 Â film is preferentially oriented along [111]. The roughness of the film increases with thickness. Three roughness zones with different crystallization modes have been identified which indicates thickness dependent crystallization. From our study, it is clear that in addition to density, the formation of preferential orientation of TiN might play a role for critical thickness requirement.","PeriodicalId":264050,"journal":{"name":"2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123967257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Quality control for ultrafiltration of ultrapure water production for high end semiconductor manufacturing 高端半导体制造超纯水生产超滤的质量控制

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491077

J. Ruth, R. Berndt

引用次数: 4

Detection and classification of gate to S/D shorts using charge dynamics 基于电荷动力学的栅极到S/D短路检测与分类

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491153

M. Lei, Kevin Wu, Qing Tian, Yan Zhao

引用次数: 3

Parameters influencing unwanted growth during epitaxial growth of SiGe SiGe外延生长过程中影响非期望生长的参数

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491128

T. Bhat, A. Chadwick, Hong Wei, Ankur Sharma, Sivakumar Kumarasamy, M. Stoker, S. Hildreth, K. Chung, Ying Hao Hsieh

引用次数: 3

Interface preservation during Ge-rich source/drain contact formation 富ge源/漏接触形成过程中的界面保存

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491158

C. Niu, M. Raymond, V. Kamineni, J. Fronheiser, S. Siddiqui, H. Niimi, J. Dechene, A. Labonté, P. Adusumilli, A. Carr, J. Shearer, J. Demarest, L. Jiang, J. Li, R. Hengstebeck

引用次数: 1

Optimized circuit design and novel Al deposition process cure power short failure caused by Al whisker 优化电路设计和新型铝沉积工艺解决了铝晶须引起的电源短路问题

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491162

Y. W. Ma, C. Lai, Zhi Min Zhang, W. Huang, Chao Yong Li, C. S. Zhou, Chee Kong Leong

引用次数: 0

Transient leakage of point-defects in gate oxide due to spatially transported constant-source of phosphorus contaminants 空间传递恒定源磷污染物引起的栅极氧化物点缺陷瞬态泄漏

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491164

L. Sheng, B. Williams, T. Haskett, E. Glines

引用次数: 1

Precleans challenges on middle-of-the-line contacts for 14nm technologies and beyond 预清洁14纳米及以上技术中线触点的挑战

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2016-05-16 DOI: 10.1109/ASMC.2016.7491167

D. Ferrer, A. Lévesque, Asli Sirman, Junedong Lee, A. Subramaniyan, L. Lanzerotti, D. Hilscher, E. Alptekin

引用次数: 1