2017 14th IEEE India Council International Conference (INDICON)最新文献_第9页

Investigation and Comparison of Phase noise and FoM of LC VCO and QVCO of 60 GHz to that of a Distributed Oscillator of 30 GHz with a Doubler 60 GHz的LC压控振荡器和带倍频器的30 GHz分布式振荡器的QVCO的相位噪声和FoM的研究与比较

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8487503

K. J. Narayana, K. Bhattacharyya

{"title":"Investigation and Comparison of Phase noise and FoM of LC VCO and QVCO of 60 GHz to that of a Distributed Oscillator of 30 GHz with a Doubler","authors":"K. J. Narayana, K. Bhattacharyya","doi":"10.1109/INDICON.2017.8487503","DOIUrl":"https://doi.org/10.1109/INDICON.2017.8487503","url":null,"abstract":"An LC VCO is designed for 60 GHz while the distributed oscillator (DO) is designed for 30 GHz, in 65 nm RF CMOS, both having a high output power of around 10 dBm (10 mW). The performance of two oscillators topologies, LC VCO and distributed oscillator, is compared. Simulation results show that the 30 GHz distributed oscillator has better phase noise compared to that of 60 GHz LC oscillator. The phase noise of DO is −101.85 dBc/Hz at 1 MHz offset from 30 GHz carrier while that of LC oscillator, it is −88.88 dBc/Hz at 1 MHz offset from 60 GHz carrier. A doubler is then used to double the DO frequency to 60 GHz but phase noise remains the same. Thus the 30 GHz distributed oscillator or even an LC VCO at 30 GHz, with a doubler can be used to achieve better phase noise performance at a higher frequency of 60 GHz. The 30 GHz LC VCO of phase noise −99.85 dBc/Hz at the same time has lesser DC power consumption than 60 GHz LC VCO. The 30 GHz DO and LC VCO has better FoM due to better phase noise performance, as compared to 60 GHz LC VCO. A 60 GHz LC QVCO has also been implemented having better phase noise than 60 GHz LC VCO. The QVCO provides 90° quadrature phase signals at its output. This work compares for the first time the performance of a distributed oscillator with that of an LC VCO and QVCO.","PeriodicalId":263943,"journal":{"name":"2017 14th IEEE India Council International Conference (INDICON)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116208285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

OPEN Unified Power Quality Conditioner Model With and Without Storage Units to Improve Power Quality and Losses of Radial Distribution Networks OPEN带和不带存储单元的统一电能质量调节器模型，改善径向配电网的电能质量和损耗

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8488098

S. Lakshmi, S. Ganguly, Upasana Sarma

{"title":"OPEN Unified Power Quality Conditioner Model With and Without Storage Units to Improve Power Quality and Losses of Radial Distribution Networks","authors":"S. Lakshmi, S. Ganguly, Upasana Sarma","doi":"10.1109/INDICON.2017.8488098","DOIUrl":"https://doi.org/10.1109/INDICON.2017.8488098","url":null,"abstract":"This paper presents an OPEN unified power quality conditioner (UPQC) model to improve the power loss and power quality for radial distribution systems. OPEN UPQC models with and without storage units are devised. An OPEN UPQC consists of two voltage source inverters, i.e., series and shunt inverters. Without storage units, the series inverter is used to protect all the downstream loads of a network from voltage sag and the shunt inverter is used to provide harmonics and reactive power compensations. In addition, both the inverters with storage units are used to provide active power compensation. The impact of the OPEN UPQC placement on distribution networks is studied by placing one of its inverters in each bus, one at a time and by fixing the location of the other inverter at a particular bus. The OPEN UPQC model is suitably incorporated to the forward-backward sweep load flow algorithm. The simulation results show that significant amount of power loss reduction can be obtained if the shunt inverter is placed at some specific locations. The series inverter can be used to protect higher amount of loads if it is placed near to the substation.","PeriodicalId":263943,"journal":{"name":"2017 14th IEEE India Council International Conference (INDICON)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121112968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Implementation Of Signal Processing Filters For Portable ECG Devices Using Android Mobile Phone And Bluetooth 基于Android手机和蓝牙的便携式心电设备信号处理滤波器的实现

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8487490

E. Subin, S. Renuka, K. Chaitanya, A. Sudheer

引用次数: 2

STATCOM-Based Voltage Regulation in Grid Integrated Wind Farm under Variable Loading Conditions 变负荷条件下基于statcom的并网风电场电压调节

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8488062

Emad Jamil, Qurratulain, S. Hameed

引用次数: 12

Performance Evaluation of Heterojunction SOI-Tunnel FET with Temperature 随温度变化的异质结soi隧道场效应管性能评价

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8487657

S. Chander, S. K. Sinha, Sanjay Kumar, P. Singh, K. Baral, Kunal Singh, S. Jit

{"title":"Performance Evaluation of Heterojunction SOI-Tunnel FET with Temperature","authors":"S. Chander, S. K. Sinha, Sanjay Kumar, P. Singh, K. Baral, Kunal Singh, S. Jit","doi":"10.1109/INDICON.2017.8487657","DOIUrl":"https://doi.org/10.1109/INDICON.2017.8487657","url":null,"abstract":"This paper investigates the impact of the temperature variation on Ge/Si heterojunction Silicon-on-Insulator (SOI) Tunnel Field Effect Transistor (TFET). The proposed device exhibits better performance in comparison with homojunction of the same device for different temperature. The effect of temperature is studied in terms of DC analysis as well as on AC analysis such as input characteristics, output characteristics, drain current, subthreshold swing (SS), threshold voltage, ION/IOFF ratio, transconductance, transconductance-to-drain-current-ratio, gate capacitance. This study reveals that OFF current of the device is independent of drain voltage variation irrespective of temperature variation. A small change in SS with temperature variation shows the weaker dependence of SS on temperature. A small variation in analog parameters with temperature variation shows that the device could be used for the high-temperature applications. A broad range of temperature from 200 K to 400 K has been used to analyze the performance of the device using Synopsys Technology Computer Aided Design (TCAD) simulation tool.","PeriodicalId":263943,"journal":{"name":"2017 14th IEEE India Council International Conference (INDICON)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126877761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Comparative Analysis of Single and Multistep Interferogram Processing Techniques 单步和多步干涉图处理技术的比较分析

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8487516

Amit Chatterjee, Jitendra Dhanotia, V. Bhatia, Santosh Rana, S. Prakash

引用次数: 2

Excellent DIBL Immunity in Junctionless Transistor on a High-$k$ Buried Oxide 高k埋氧化物无结晶体管的DIBL抗扰性

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8487497

M. Ehteshamuddin, S. Loan, M. Rafat

引用次数: 0

A Small Scale Microgrid Planning based on Battery SOC for a Grid-connected Microgrid comprising of PV System 基于电池SOC的小型光伏并网微电网规划

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8487733

Maneesh Kumar, B. Tyagi

引用次数: 1

Development of Semi supervised Classifier for SAR Image Pattern Recognition 半监督分类器在SAR图像模式识别中的应用

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8487830

Nidhi Verma, P. Kumawat, P. Mishra, N. Purohit, Dharmendra Singh

引用次数: 0

A Novel Analysis to Reduce Leakage Current in Charge Plasma Based TFET 一种降低电荷等离子体基TFET漏电流的新方法

2017 14th IEEE India Council International Conference (INDICON) Pub Date : 2017-12-01 DOI: 10.1109/INDICON.2017.8487606

Shivendra Yadav, D. Sharma, M. Aslam, Deepak Soni

引用次数: 4