{"title":"高k埋氧化物无结晶体管的DIBL抗扰性","authors":"M. Ehteshamuddin, S. Loan, M. Rafat","doi":"10.1109/INDICON.2017.8487497","DOIUrl":null,"url":null,"abstract":"In this paper, we focus on the study of drain-induced barrier lowering (DIBL) related to junctionless transistor (JLT) with high-k BOX (HB-JLT) instead of a conventional SiO2 BOX JLT. In a HB-JLT, the use of high-k dielectric BOX results in better coupling between the p+ground plane and ultathin Si film layer resulting in volume depletion in OFF-state and has added advantage of DIBL immunity. It has been verified with calibrated simulations that the increase in permittivity of the BOX dielectric completely minimizes the DIBL effect even at a channel length of 10 nm, specifically for HfO2 and La2O3 as BOX material with improved ION/IOFFratio.","PeriodicalId":263943,"journal":{"name":"2017 14th IEEE India Council International Conference (INDICON)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Excellent DIBL Immunity in Junctionless Transistor on a High-$k$ Buried Oxide\",\"authors\":\"M. Ehteshamuddin, S. Loan, M. Rafat\",\"doi\":\"10.1109/INDICON.2017.8487497\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we focus on the study of drain-induced barrier lowering (DIBL) related to junctionless transistor (JLT) with high-k BOX (HB-JLT) instead of a conventional SiO2 BOX JLT. In a HB-JLT, the use of high-k dielectric BOX results in better coupling between the p+ground plane and ultathin Si film layer resulting in volume depletion in OFF-state and has added advantage of DIBL immunity. It has been verified with calibrated simulations that the increase in permittivity of the BOX dielectric completely minimizes the DIBL effect even at a channel length of 10 nm, specifically for HfO2 and La2O3 as BOX material with improved ION/IOFFratio.\",\"PeriodicalId\":263943,\"journal\":{\"name\":\"2017 14th IEEE India Council International Conference (INDICON)\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 14th IEEE India Council International Conference (INDICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INDICON.2017.8487497\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 14th IEEE India Council International Conference (INDICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INDICON.2017.8487497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Excellent DIBL Immunity in Junctionless Transistor on a High-$k$ Buried Oxide
In this paper, we focus on the study of drain-induced barrier lowering (DIBL) related to junctionless transistor (JLT) with high-k BOX (HB-JLT) instead of a conventional SiO2 BOX JLT. In a HB-JLT, the use of high-k dielectric BOX results in better coupling between the p+ground plane and ultathin Si film layer resulting in volume depletion in OFF-state and has added advantage of DIBL immunity. It has been verified with calibrated simulations that the increase in permittivity of the BOX dielectric completely minimizes the DIBL effect even at a channel length of 10 nm, specifically for HfO2 and La2O3 as BOX material with improved ION/IOFFratio.
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