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2014 IEEE MTT-S International Microwave Symposium (IMS2014)最新文献

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Graphene-based electronically tunable microstrip attenuator 石墨烯基电子可调谐微带衰减器
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848645
L. Pierantoni, D. Mencarelli, M. Bozzi, R. Moro, S. Bellucci
{"title":"Graphene-based electronically tunable microstrip attenuator","authors":"L. Pierantoni, D. Mencarelli, M. Bozzi, R. Moro, S. Bellucci","doi":"10.1109/MWSYM.2014.6848645","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848645","url":null,"abstract":"This paper presents the design of a graphene-based electronically tunable microstrip attenuator operating at the frequency of 5 GHz. The use of graphene as a variable resistor is discussed, and the modeling of its electromagnetic properties at microwave frequencies is fully addressed. The design of the graphene-based attenuator is described. The structure integrates a patch of graphene, whose characteristics can range from fairly good conductor to highly lossy material, depending on the applied voltage. By applying the proper voltage through two high-impedance bias lines, the surface resistivity of graphene can be modified, thus changing the insertion loss of the microstrip attenuator.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115928461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Cryogenic performance of HEMT amplifiers at 340GHz and 670GHz HEMT放大器在340GHz和670GHz的低温性能
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848250
T. Reck, W. Deal, G. Chattopadhyay
{"title":"Cryogenic performance of HEMT amplifiers at 340GHz and 670GHz","authors":"T. Reck, W. Deal, G. Chattopadhyay","doi":"10.1109/MWSYM.2014.6848250","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848250","url":null,"abstract":"The cryogenic performance of HEMT amplifiers operating above 300 GHz is presented for the first time. InP HEMT amplifiers designed for room temperature operation are cooled to 25 K and their sensitivity is characterized using the Y-factor method. Minimum noise temperatures of 400 K and 550 K are achieved at 340 GHz and 670 GHz, respectively.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130028866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Resonance property of an optoelectronically reconfigurable infinite periodic array of densely spaced subwavelength slots 密集间隔亚波长槽的光电可重构无限周期阵列的共振特性
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848380
K. Nishimura
{"title":"Resonance property of an optoelectronically reconfigurable infinite periodic array of densely spaced subwavelength slots","authors":"K. Nishimura","doi":"10.1109/MWSYM.2014.6848380","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848380","url":null,"abstract":"This paper theoretically presents TM electromagnetic plane wave scattering characteristics of an optically controlled subwavelength slot grating with an electrically small period on a dielectric slab. It is theoretically disscussed about how the resonance property of the subwavelength slot grating could be controlled using photoinduced plasma, changing the thickness of the slots, for application of the subwavelength slot grating to the optoelectronically reconfigurable millimeter wave circuits.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"38 17","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131804478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-Port UHF RFID tag antenna for enhanced energy harvesting of self-powered wireless sensors 多端口超高频RFID标签天线，用于增强自供电无线传感器的能量收集
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848477
A. Abdulhadi, Yi Ding, M. Parvizi, R. Abhari
{"title":"Multi-Port UHF RFID tag antenna for enhanced energy harvesting of self-powered wireless sensors","authors":"A. Abdulhadi, Yi Ding, M. Parvizi, R. Abhari","doi":"10.1109/MWSYM.2014.6848477","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848477","url":null,"abstract":"In this paper, a multi-port RFID tag antenna is integrated with an I2C-RFID chip along with a microcontroller unit (MCU) and a sensor to implement a low-cost wireless temperature sensor using a commercial RFID reader. The key feature of this design is a two-port patch antenna with energy-harvesting circuitry at its second port, which can acquire the supply voltage needed for the operation of RFID tag sensor from the RF signal transmitted by the reader. In addition, a secondary method of energy harvesting is included by integrating thin film solar cells in the RFID tag profile. The measurements of the fabricated tag-based sensor demonstrate that a maximum sensing/reading range of 27 m is achieved when all the circuits are powered using solar cells. When the tag is operated as a simple RFID tag with no energy harvesting employed to power up the passive RFID chip 12.1m reading range is obtained.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131831980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Towards the design and fabrication of graphene based flexible GHz radio receiver systems 基于石墨烯的柔性GHz无线电接收系统的设计与制造
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848386
M. Yogeesh, Kristen Parish, Jongho Lee, L. Tao, D. Akinwande
{"title":"Towards the design and fabrication of graphene based flexible GHz radio receiver systems","authors":"M. Yogeesh, Kristen Parish, Jongho Lee, L. Tao, D. Akinwande","doi":"10.1109/MWSYM.2014.6848386","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848386","url":null,"abstract":"We present the design and fabrication of high speed flexible graphene field effect transistors (GFETs) with high electron mobilities (~8000cm2/V.s), hole mobilities (~ 6600cm2/V.s) and record intrinsic transit frequency-fT of ~32GHz. We also present the design and fabrication of the first flexible graphene based amplitude modulated (AM) radio receiver operating at 2.4GHz. This radio includes a GFET based demodulator and flexible graphite microstrip patch antenna resonating at 2.4GHz.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128957099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology 采用130 nm SiGe HBT技术的低相位噪声和高输出功率367 GHz和154 GHz信号源
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848559
S. Zeinolabedinzadeh, P. Song, M. Kaynak, M. Kamarei, B. Tillack, J. Cressler
{"title":"Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology","authors":"S. Zeinolabedinzadeh, P. Song, M. Kaynak, M. Kamarei, B. Tillack, J. Cressler","doi":"10.1109/MWSYM.2014.6848559","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848559","url":null,"abstract":"This paper addresses the design and measurement results of two high frequency signal sources implemented in SiGe HBT technology. The 367 GHz signal source achieves a phase noise of -110 dBc/Hz at 10 MHz offset from the carrier and provides better than -8 dBm of output power. The 154 GHz signal source achieves a phase noise of -87 dBc/Hz at 1 MHz offset from the carrier and generates +7 dBm of differential output power. To the author's knowledge, the 154 GHz oscillator achieves the highest output power among silicon-based signal sources in this frequency range, and the 367 GHz signal source achieves the best phase noise among silicon-based signal sources in this frequency range. These results show the feasibility of implementation of high-performance sub-millimeter-wave circuits in advanced SiGe technology platforms.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131227105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
A coupling matrix-based readout technique for single-port multi-resonator passive sensor array 基于耦合矩阵的单端口多谐振器无源传感器阵列读出技术
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848534
W. T. Chen, R. Mansour, J. Carroll
{"title":"A coupling matrix-based readout technique for single-port multi-resonator passive sensor array","authors":"W. T. Chen, R. Mansour, J. Carroll","doi":"10.1109/MWSYM.2014.6848534","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848534","url":null,"abstract":"This paper presents a novel application of RF-filter parameter extraction techniques with coupling matrix model to obtain decoupled capacitive sensor readings from the S11 of a single-port, multi-resonator passive RF resonant sensor array. As an example application, two dual-resonator sensor arrays loaded with four selected functional polymers are implemented to allow ethanol and acetone identification. Through the parameter extraction techniques, the changes in capacitances of the sensor pair are obtained as chemical signatures to differentiate the presence of ethanol from acetone.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130746031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization of a low-loss and wide-band (DC to 170 GHz) flip-chip interconnect on an organic substrate 在有机衬底上的低损耗宽频带(直流至170 GHz)倒装芯片互连的特性
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848343
W. Khan, A. Ulusoy, Robert L. Schmid, J. Papapolymerou
{"title":"Characterization of a low-loss and wide-band (DC to 170 GHz) flip-chip interconnect on an organic substrate","authors":"W. Khan, A. Ulusoy, Robert L. Schmid, J. Papapolymerou","doi":"10.1109/MWSYM.2014.6848343","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848343","url":null,"abstract":"This paper, for the first time, presents the characterization of a very wide-band flip-chip interconnect from DC to 170 GHz on a liquid crystal polymer substrate. The performance is optimized by modeling the structure in a 3-D electromagnetic simulation software. To mitigate the influence of the capacitive effect caused by the flip-chip overlap section, high impedance inductive sections are used. The measured return loss is more than 10 dB, while the insertion loss is less than 0.9 dB/mm for the transmission line and the interconnect across the entire frequency range. The measurements correlate well with simulated results.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132270608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
An 8 GHz CMOS near field bio-sensor array for imaging spatial permittivity distribution of biomaterials 一种用于成像生物材料空间介电常数分布的8 GHz CMOS近场生物传感器阵列
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848459
S. Guha, F. I. Jamal, K. Schmalz, C. Wenger, C. Meliani
{"title":"An 8 GHz CMOS near field bio-sensor array for imaging spatial permittivity distribution of biomaterials","authors":"S. Guha, F. I. Jamal, K. Schmalz, C. Wenger, C. Meliani","doi":"10.1109/MWSYM.2014.6848459","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848459","url":null,"abstract":"In this paper a CMOS biosensor array operating around 8 GHz is presented, for characterizing biomaterials by imaging the spatial distribution of permittivity. The sensor is fabricated in standard 250 nm SiGe BiCMOS process. The sensor operation is based on the frequency shift of cross-coupled oscillator circuit due to capacitance change of the core LC tank. Non-uniform four finger interdigitated capacitor is used as the sensor unit. A four element sensor array system is used in this work for the proof of concept of spatial dielectric imaging. Measured sensitivity is observed to be 22 MHz per unit permittivity change. After first sensitivity tests, the spatial discrimination capability of the array is shown by further testing the array with biomaterials of different permittivity on different sensor units, showing unique frequency shift for individual sensors.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"14 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132286843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
1.5–2.7 GHz ultra low noise bypass LNA 1.5 ~ 2.7 GHz超低噪声旁路LNA
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848521
Jingshi Yao, Xiaopeng Sun, B. Lin
{"title":"1.5–2.7 GHz ultra low noise bypass LNA","authors":"Jingshi Yao, Xiaopeng Sun, B. Lin","doi":"10.1109/MWSYM.2014.6848521","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848521","url":null,"abstract":"Bypass low-noise amplifier (LNA) can be used in the base station receiver to improve the dynamic range. It is difficult to achieve both ultra low noise at LNA mode and maintain good linearity at bypass mode simultaneously. In this work, we present the best performance bypass LNA with 0.5 dB of noise figure (NF), 20 dB of gain at 1.95 GHz and high OIP3 of 35 dBm for both LNA and bypass mode. Fabricated in 0.25um GaAs E/D pHEMT process, the LNA is based on enhancement mode pHEMT cascode topology and the switches are designed with the depletion mode pHEMT.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128907818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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