W. Khan, A. Ulusoy, Robert L. Schmid, J. Papapolymerou
{"title":"在有机衬底上的低损耗宽频带(直流至170 GHz)倒装芯片互连的特性","authors":"W. Khan, A. Ulusoy, Robert L. Schmid, J. Papapolymerou","doi":"10.1109/MWSYM.2014.6848343","DOIUrl":null,"url":null,"abstract":"This paper, for the first time, presents the characterization of a very wide-band flip-chip interconnect from DC to 170 GHz on a liquid crystal polymer substrate. The performance is optimized by modeling the structure in a 3-D electromagnetic simulation software. To mitigate the influence of the capacitive effect caused by the flip-chip overlap section, high impedance inductive sections are used. The measured return loss is more than 10 dB, while the insertion loss is less than 0.9 dB/mm for the transmission line and the interconnect across the entire frequency range. The measurements correlate well with simulated results.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Characterization of a low-loss and wide-band (DC to 170 GHz) flip-chip interconnect on an organic substrate\",\"authors\":\"W. Khan, A. Ulusoy, Robert L. Schmid, J. Papapolymerou\",\"doi\":\"10.1109/MWSYM.2014.6848343\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper, for the first time, presents the characterization of a very wide-band flip-chip interconnect from DC to 170 GHz on a liquid crystal polymer substrate. The performance is optimized by modeling the structure in a 3-D electromagnetic simulation software. To mitigate the influence of the capacitive effect caused by the flip-chip overlap section, high impedance inductive sections are used. The measured return loss is more than 10 dB, while the insertion loss is less than 0.9 dB/mm for the transmission line and the interconnect across the entire frequency range. The measurements correlate well with simulated results.\",\"PeriodicalId\":262816,\"journal\":{\"name\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2014.6848343\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2014.6848343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of a low-loss and wide-band (DC to 170 GHz) flip-chip interconnect on an organic substrate
This paper, for the first time, presents the characterization of a very wide-band flip-chip interconnect from DC to 170 GHz on a liquid crystal polymer substrate. The performance is optimized by modeling the structure in a 3-D electromagnetic simulation software. To mitigate the influence of the capacitive effect caused by the flip-chip overlap section, high impedance inductive sections are used. The measured return loss is more than 10 dB, while the insertion loss is less than 0.9 dB/mm for the transmission line and the interconnect across the entire frequency range. The measurements correlate well with simulated results.