在有机衬底上的低损耗宽频带(直流至170 GHz)倒装芯片互连的特性

W. Khan, A. Ulusoy, Robert L. Schmid, J. Papapolymerou
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引用次数: 10

摘要

本文首次提出了在液晶聚合物衬底上从直流到170 GHz的极宽带倒装芯片互连的特性。利用三维电磁仿真软件对结构进行建模,优化了结构的性能。为了减轻倒装重叠部分造成的容性效应的影响,采用了高阻抗电感部分。在整个频率范围内,传输线和互连线的回波损耗均大于10 dB,插入损耗均小于0.9 dB/mm。测量结果与模拟结果吻合良好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of a low-loss and wide-band (DC to 170 GHz) flip-chip interconnect on an organic substrate
This paper, for the first time, presents the characterization of a very wide-band flip-chip interconnect from DC to 170 GHz on a liquid crystal polymer substrate. The performance is optimized by modeling the structure in a 3-D electromagnetic simulation software. To mitigate the influence of the capacitive effect caused by the flip-chip overlap section, high impedance inductive sections are used. The measured return loss is more than 10 dB, while the insertion loss is less than 0.9 dB/mm for the transmission line and the interconnect across the entire frequency range. The measurements correlate well with simulated results.
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