HEMT放大器在340GHz和670GHz的低温性能

2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI:10.1109/MWSYM.2014.6848250

T. Reck, W. Deal, G. Chattopadhyay

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引用次数: 12

摘要

首次介绍了工作频率在300 GHz以上的HEMT放大器的低温性能。设计用于室温工作的InP HEMT放大器冷却至25 K，并使用y因子法表征其灵敏度。在340ghz和670ghz频段，噪声温度分别达到400k和550k。

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Cryogenic performance of HEMT amplifiers at 340GHz and 670GHz

The cryogenic performance of HEMT amplifiers operating above 300 GHz is presented for the first time. InP HEMT amplifiers designed for room temperature operation are cooled to 25 K and their sensitivity is characterized using the Y-factor method. Minimum noise temperatures of 400 K and 550 K are achieved at 340 GHz and 670 GHz, respectively.

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2014 IEEE MTT-S International Microwave Symposium (IMS2014)

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