W. Khan, A. Ulusoy, Robert L. Schmid, J. Papapolymerou
{"title":"Characterization of a low-loss and wide-band (DC to 170 GHz) flip-chip interconnect on an organic substrate","authors":"W. Khan, A. Ulusoy, Robert L. Schmid, J. Papapolymerou","doi":"10.1109/MWSYM.2014.6848343","DOIUrl":null,"url":null,"abstract":"This paper, for the first time, presents the characterization of a very wide-band flip-chip interconnect from DC to 170 GHz on a liquid crystal polymer substrate. The performance is optimized by modeling the structure in a 3-D electromagnetic simulation software. To mitigate the influence of the capacitive effect caused by the flip-chip overlap section, high impedance inductive sections are used. The measured return loss is more than 10 dB, while the insertion loss is less than 0.9 dB/mm for the transmission line and the interconnect across the entire frequency range. The measurements correlate well with simulated results.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2014.6848343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
This paper, for the first time, presents the characterization of a very wide-band flip-chip interconnect from DC to 170 GHz on a liquid crystal polymer substrate. The performance is optimized by modeling the structure in a 3-D electromagnetic simulation software. To mitigate the influence of the capacitive effect caused by the flip-chip overlap section, high impedance inductive sections are used. The measured return loss is more than 10 dB, while the insertion loss is less than 0.9 dB/mm for the transmission line and the interconnect across the entire frequency range. The measurements correlate well with simulated results.