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2014 IEEE MTT-S International Microwave Symposium (IMS2014)最新文献

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High-selectivity dual-passband bandpass filter with dual coupled lines 双耦合线高选择性双通带带通滤波器
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848462
Bo-Han Wang, Ching‐Wen Tang
{"title":"High-selectivity dual-passband bandpass filter with dual coupled lines","authors":"Bo-Han Wang, Ching‐Wen Tang","doi":"10.1109/MWSYM.2014.6848462","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848462","url":null,"abstract":"A microstrip dual-band bandpass filter is presented. By adjusting the even- and odd-mode impedances, two resonances formed two passbands. Moreover, transmission zeros are located at both sides of two passband skirts, which can be adjusted by the coupling coefficient of the shorted coupled line. For demonstration, a dual-band bandpass filter operating at 0.8 and 2.2 GHz is designed and fabricated. The theoretical analysis and measurement are presented. Good agreement verifies the proposed method.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116513654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dynamic FET stack control for enhanced efficiency in envelope tracking power amplifiers 提高包络跟踪功率放大器效率的动态场效应管堆叠控制
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848659
J. Woo, Moon-Suk Jeon, Y. Kwon
{"title":"Dynamic FET stack control for enhanced efficiency in envelope tracking power amplifiers","authors":"J. Woo, Moon-Suk Jeon, Y. Kwon","doi":"10.1109/MWSYM.2014.6848659","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848659","url":null,"abstract":"In this work, a dynamic FET stacking is proposed to implement an envelope tracking power amplifier (ET PA) to enhance the efficiency at low VDD and backed-off power range. Quadruple-stacked CMOS power cell is reconfigured to operate as quasi-triple or quasi-double stacks according to the magnitude of the input envelope. The overall ET PA with the proposed RF power amplifier and envelope amplifier fabricated using 0.18-μm SOI CMOS shows an overall efficiency of 46% for 10 MHz LTE and 52% for WCDMA signal, which are 4.5% and 2.8% higher than the static stack ET PA. Adequate linearity has also been demonstrated using the gain and phase step compensation circuitry.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133564199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Development of a Liquid Crystal Polymer low noise amplifier module at Ka-band ka波段液晶聚合物低噪声放大模块的研制
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848621
M. Mamidanna, A. Pham, F. Montauti
{"title":"Development of a Liquid Crystal Polymer low noise amplifier module at Ka-band","authors":"M. Mamidanna, A. Pham, F. Montauti","doi":"10.1109/MWSYM.2014.6848621","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848621","url":null,"abstract":"The design and development of a Liquid Crystal Polymer (LCP) low noise amplifier module with an integrated waveguide input at Ka-band is presented. The LCP module houses two low noise amplifiers and an integrated band-pass filter. The integrated waveguide input transition to a microstrip achieves a measured insertion loss of 0.2 dB to 0.3 dB from 27 to 31 GHz. The LCP module has a measured noise figure of ~2.5 dB and a gain of 30 dB.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131865563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A compact waveguide diplexer employing dual-band resonators 采用双频谐振器的紧凑型波导双工器
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848499
Li Zhu, R. Mansour, Yu Ming
{"title":"A compact waveguide diplexer employing dual-band resonators","authors":"Li Zhu, R. Mansour, Yu Ming","doi":"10.1109/MWSYM.2014.6848499","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848499","url":null,"abstract":"This paper outlines a new class of diplexers realized using a combination of dual-band cavities and single-band cavities. The proposed diplexer does not require junctions and can achieve similar performance with fewer cavities, thus significantly reducing the size of the diplexer when compared to traditional approaches. The concept is potentially applicable to most dual-band cavities as demonstrated in this paper using rectangular waveguide cavities. A unique layout is proposed that combines the use of dual-band cavities operating in TE101 and TE011 modes as well as single-band cavities operating in TE101 or TE102 mode. The result is a diplexer that is very compact in size while offering increased Q and an improved spurious free window. To verify the concept a 4th order Ku-band diplexer is designed, manufactured, and tested to allow comparison to a traditional design.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132207630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
High efficiency 15–500MHz wideband cascode GaN HEMT MMIC amplifiers 高效15-500MHz宽带级联编码GaN HEMT MMIC放大器
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848594
D. Sardin, Z. Popovic
{"title":"High efficiency 15–500MHz wideband cascode GaN HEMT MMIC amplifiers","authors":"D. Sardin, Z. Popovic","doi":"10.1109/MWSYM.2014.6848594","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848594","url":null,"abstract":"Two broadband VHF MMIC power amplifiers using GaN HEMT transistors are described in this paper. The first circuit exhibits a PAE ranging from 85% to 51% in the 15MHz - 500MHz bandwidth. The second circuit is a self-biased design and demonstrates a peak PAE of 75% at 100MHz for 13.5W output power in a similar bandwidth. The self biased topology enables a higher bias voltage and therefore higher output power. The 3.3 decade bandwidth operation is accomplished by choosing the device size to match the 50-Ω load thus avoiding any additional matching circuit. The results in this paper demonstrate the usefulness of GaN on SiC technology at VHF/UHF frequencies with fully integrated circuits operating at high output power and efficiency.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134645790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Combined control of drain video bandwidth and stability margins in power amplifiers for envelope tracking applications 包络跟踪应用中功率放大器的漏极视频带宽和稳定裕度的组合控制
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848420
J. Pelaz, J. Collantes, N. Otegi, A. Anakabe, G. Collins
{"title":"Combined control of drain video bandwidth and stability margins in power amplifiers for envelope tracking applications","authors":"J. Pelaz, J. Collantes, N. Otegi, A. Anakabe, G. Collins","doi":"10.1109/MWSYM.2014.6848420","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848420","url":null,"abstract":"Envelope tracking amplifiers require significant video bandwidths to accommodate the dynamic variations of the drain bias. However, the increase of drain video bandwidth in a power amplifier can raise the risk of low frequency oscillations when some circuit parameters are changed. In this work, an experimental methodology is presented to monitor the drain video bandwidth and the low frequency stability margin in combination. The methodology is based on adding observation ports to both drain and gate bias paths in order to measure and control the critical and dominant poles that govern the low frequency dynamics of the power amplifier. The complete approach is illustrated in a demonstrator prototype specifically built for that purpose.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133075031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Ultra-wideband single-balanced transmitter-MMIC for 300 GHz communication systems 用于300 GHz通信系统的超宽带单平衡发射机- mmic
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848414
J. Antes, F. Boes, D. Meier, T. Messinger, U. Lewark, A. Tessmann, S. Wagner, I. Kallfass
{"title":"Ultra-wideband single-balanced transmitter-MMIC for 300 GHz communication systems","authors":"J. Antes, F. Boes, D. Meier, T. Messinger, U. Lewark, A. Tessmann, S. Wagner, I. Kallfass","doi":"10.1109/MWSYM.2014.6848414","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848414","url":null,"abstract":"An ultra-wideband transmitter MMIC based on a single-balanced mixer circuit for high-speed communication systems around 300GHz has been successfully realized in a 35nm mHEMT technology. Besides the single-balanced mixer cell, the transmitter comprises a frequency tripler followed by a buffer amplifier in the LO path as well as an RF post-amplifier on a single chip. Chip measurements show an output power above 0 dBm, paired to a conversion gain of 0 dB and a 3-dB IF bandwidth of 40GHz for the transmitter MMIC, which makes it a perfect candidate for the next generation of 100 Gbit/s indoor communication systems.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115758205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
A 76- to 81-GHz transceiver chipset for long-range and short-range automotive radar 用于远程和短程汽车雷达的76至81 ghz收发器芯片组
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848490
Y. Takeda, Takeji Fujibayashi, Yi-Shin Yeh, Weihu Wang, B. Floyd
{"title":"A 76- to 81-GHz transceiver chipset for long-range and short-range automotive radar","authors":"Y. Takeda, Takeji Fujibayashi, Yi-Shin Yeh, Weihu Wang, B. Floyd","doi":"10.1109/MWSYM.2014.6848490","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848490","url":null,"abstract":"This paper presents a 76- to 81-GHz transceiver chipset implemented in SiGe BiCMOS technology for both long-range and short-range radar applications. A four-channel receiver achieves 11-12 dB noise figure, 16-dB conversion gain, and -2 dBm input compression point. A single-channel transmitter with integrated subharmonic VCO achieves +17 dBm output power and -97 dBc/Hz phase noise at 1-MHz offset referenced to the 77-GHz carrier. The chipset includes built-in-self-test features allowing measurement of RF power, gain, and phase. Total power consumption is 0.79 W for the four-channel receiver and 1.16 W for the transmitter.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124329957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A performance enhanced power divider structure 一种性能增强的功率分配器结构
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848350
Vahdettin Taş, A. Atalar
{"title":"A performance enhanced power divider structure","authors":"Vahdettin Taş, A. Atalar","doi":"10.1109/MWSYM.2014.6848350","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848350","url":null,"abstract":"We analyze the bandwidth capability of a divider with a series RLC circuit at the isolation arm. Analytical expressions for optimal component values are given. Bandwidth limiting effect of the pad capacitances of the chip resistors is analyzed. These parasitic capacitors are compensated by the proposed structure. Broadband characteristic of the new divider is verified by experimental results.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132521824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
LNA modules for the WR4 (170–260 GHz) frequency range LNA模块用于WR4 (170 ~ 260 GHz)频率范围
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Pub Date : 2014-06-01 DOI: 10.1109/MWSYM.2014.6848291
M. Varonen, L. Samoska, A. Fung, S. Padmanahban, P. Kangaslahti, R. Lai, S. Sarkozy, M. Soria, H. Owen
{"title":"LNA modules for the WR4 (170–260 GHz) frequency range","authors":"M. Varonen, L. Samoska, A. Fung, S. Padmanahban, P. Kangaslahti, R. Lai, S. Sarkozy, M. Soria, H. Owen","doi":"10.1109/MWSYM.2014.6848291","DOIUrl":"https://doi.org/10.1109/MWSYM.2014.6848291","url":null,"abstract":"In this work, we report on developments toward ultra-low noise amplifier modules for the WR4 frequency range, covering 170-260 GHz. The amplifiers in question utilize 35 nm HEMT transistors on a 50 μm thick InP substrate, and were developed at NGC. While recent work in this frequency band has demonstrated the usefulness and advanced technology of utilizing integrated waveguide transitions fabricated on the high dielectric constant MMIC amplifiers themselves, we present evidence here that more standard, cost effective techniques like merging low-loss quartz probes with short wire bonds can provide excellent noise performance, even at these high frequencies. The amplifiers discussed in this paper demonstrate a record 600K noise (4.8 dB) at 220 GHz and 700K (5.2 dB) noise at 240 GHz.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134474986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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