{"title":"提高包络跟踪功率放大器效率的动态场效应管堆叠控制","authors":"J. Woo, Moon-Suk Jeon, Y. Kwon","doi":"10.1109/MWSYM.2014.6848659","DOIUrl":null,"url":null,"abstract":"In this work, a dynamic FET stacking is proposed to implement an envelope tracking power amplifier (ET PA) to enhance the efficiency at low VDD and backed-off power range. Quadruple-stacked CMOS power cell is reconfigured to operate as quasi-triple or quasi-double stacks according to the magnitude of the input envelope. The overall ET PA with the proposed RF power amplifier and envelope amplifier fabricated using 0.18-μm SOI CMOS shows an overall efficiency of 46% for 10 MHz LTE and 52% for WCDMA signal, which are 4.5% and 2.8% higher than the static stack ET PA. Adequate linearity has also been demonstrated using the gain and phase step compensation circuitry.","PeriodicalId":262816,"journal":{"name":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Dynamic FET stack control for enhanced efficiency in envelope tracking power amplifiers\",\"authors\":\"J. Woo, Moon-Suk Jeon, Y. Kwon\",\"doi\":\"10.1109/MWSYM.2014.6848659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a dynamic FET stacking is proposed to implement an envelope tracking power amplifier (ET PA) to enhance the efficiency at low VDD and backed-off power range. Quadruple-stacked CMOS power cell is reconfigured to operate as quasi-triple or quasi-double stacks according to the magnitude of the input envelope. The overall ET PA with the proposed RF power amplifier and envelope amplifier fabricated using 0.18-μm SOI CMOS shows an overall efficiency of 46% for 10 MHz LTE and 52% for WCDMA signal, which are 4.5% and 2.8% higher than the static stack ET PA. Adequate linearity has also been demonstrated using the gain and phase step compensation circuitry.\",\"PeriodicalId\":262816,\"journal\":{\"name\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE MTT-S International Microwave Symposium (IMS2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2014.6848659\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE MTT-S International Microwave Symposium (IMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2014.6848659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
在这项工作中,提出了一种动态场效应管堆叠来实现包络跟踪功率放大器(ET PA),以提高低VDD和退关功率范围下的效率。根据输入包络线的大小,将四层堆叠CMOS功率电池重新配置为准三层堆叠或准双层堆叠。采用0.18 μm SOI CMOS制作的射频功率放大器和包络放大器的整体ET PA在10 MHz LTE信号下的总效率为46%,在WCDMA信号下的总效率为52%,分别比静态堆叠ET PA高4.5%和2.8%。使用增益和相位步进补偿电路也证明了足够的线性度。
Dynamic FET stack control for enhanced efficiency in envelope tracking power amplifiers
In this work, a dynamic FET stacking is proposed to implement an envelope tracking power amplifier (ET PA) to enhance the efficiency at low VDD and backed-off power range. Quadruple-stacked CMOS power cell is reconfigured to operate as quasi-triple or quasi-double stacks according to the magnitude of the input envelope. The overall ET PA with the proposed RF power amplifier and envelope amplifier fabricated using 0.18-μm SOI CMOS shows an overall efficiency of 46% for 10 MHz LTE and 52% for WCDMA signal, which are 4.5% and 2.8% higher than the static stack ET PA. Adequate linearity has also been demonstrated using the gain and phase step compensation circuitry.