Yi-Chung Chang, Shi-Yu Huang, Chao-Wen Tzeng, Jack T. Yao
{"title":"A fully cell-based design for timing measurement of memory","authors":"Yi-Chung Chang, Shi-Yu Huang, Chao-Wen Tzeng, Jack T. Yao","doi":"10.1109/TEST.2011.6139150","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139150","url":null,"abstract":"This work presents a scheme for measuring the timing parameters of a memory's I/O interface — including the setup/hold time and access time. For setup/hold time measurement, we incorporate a procedure that successively adjusts the timing relation between the clock signal and a controllable valid timing window to estimate the setup/hold time. For access time measurement, we propose a circuit that can capture the worst-case access time of an entire Built-In Self-Test (BIST) session as a pulse width, which is then further measured by traditional time-to-digital converter (TDC). Instead of just reporting a digital code, we also propose a calibration scheme so that we can report not just some digital codes, but also their corresponding absolute values. All the design can be constructed by standard cells. We have implemented it in TSMC 0.18nm CMOS process technology. Simulation results show that the setup time error is less than 3%, the hold time error is 7.5%, and the access time error is 4.4%, with about 6.2% area overhead when the memory size is 4096×64.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"49 14","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131828981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Lithography aware critical area estimation and yield analysis","authors":"P. Vijayakumar, Vikram B. Suresh, S. Kundu","doi":"10.1109/TEST.2011.6139152","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139152","url":null,"abstract":"Advancing technology nodes have increased the impact of lithography variation on design yield and performance. Although lithographic distortion is emerging as the dominant mode of failure, particulate defect still remains an important source of defect. In this work, we present a novel critical area analysis technique that deals with non-deterministic line edges that arise due to statistical lithography variations. Previous critical area analysis techniques are based on fixed printed structures with variable defect sizes. The proposed solution integrates lithographic variations within critical area analysis, using available tools while keeping the computational complexity in check. The key optimizations include weighted stratified sampling of important lithographic parameters and Monte Carlo based Probability of Failure (POF) calculation that is scalable to large chips. Simulation results on ISCAS benchmarks show that inclusion of lithography induced physical variations can increase critical area by as much as 2X, while overall yield due to particulate defects in large designs may decrease by more than 5%; validating both the need for an integrated solution and its feasibility on large designs.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"469 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114659856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Clock-gating-aware low launch WSA test pattern generation for at-speed scan testing","authors":"Yi-Tsung Lin, Jiun-Lang Huang, X. Wen","doi":"10.1109/TEST.2011.6139132","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139132","url":null,"abstract":"Capture power management has become a necessity to avoid at-speed scan testing yield loss, especially for modern complex and low power designs. This paper proposes a test pattern generation methodology that utilizes the available clock-gating mechanism, a popular low power design technique, to reduce the launch cycle weighted switching activity (WSA) for at-speed scan testing. Compared to previous techniques that consider clock-gating, a significant launch cycle WSA reduction is achieved without severe test pattern inflation.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116053454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Chakravarty, Binh Dang, Darcy Escovedo, A. J. Haas
{"title":"Optimal manufacturing flow to determine minumum operating voltage","authors":"S. Chakravarty, Binh Dang, Darcy Escovedo, A. J. Haas","doi":"10.1109/TEST.2011.6139169","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139169","url":null,"abstract":"A technique to optimize power determines the minimum operating voltage during manufacturing testing on a per die basis. The die is then programmed to operate at the minimum voltage for the life of the die. Silicon results to evaluate the effectiveness of a variety of techniques to determine the minimum voltage of a die, in a manufacturing environment, are presented. Based on this we propose an adaptive hybrid test flow that is guaranteed to compute the minimum voltage while minimizing test time. Finally, sample data on power optimization achievable using power reduction is provided.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127799269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Acharyya, Kosuke Miyao, David Ting, Daniel Lam, Robert Smith, Pete Fitzpatrick, Brian Buras, John Williamson
{"title":"Architecture and implementation of a truly parallel ATE capable of measuring pico ampere level current","authors":"D. Acharyya, Kosuke Miyao, David Ting, Daniel Lam, Robert Smith, Pete Fitzpatrick, Brian Buras, John Williamson","doi":"10.1109/TEST.2011.6139133","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139133","url":null,"abstract":"With advancing technology nodes, the feature sizes of transistors are scaled down aggressively and the effects of process variations on semiconductor device parameters are becoming worse. Accurate device level statistical models are necessary to understand the composite effect of process variations on IC performance. Statistical models require a large amount of data from measurements made on wafers with test structures and product chips. High precision DC parametric measurements form a key component to understanding the device level process interactions. One important aspect of DC parametric measurements is the ability to accurately measure currents ranging from pico-amperes for leakage characterization to milli-amperes for transistor IV characterization. Sophisticated test equipment that meets the requirements of high accuracy and high throughput are needed for this purpose. In this paper we present a hybrid tester that addresses these requirements. The novel architecture presented here is scalable and truly parallel. The system is capable of measuring currents from pico-amperes to hundreds of milli-amperes and at the same time provide advanced digital test capabilities.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129160255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jen-Yang Wen, Yu-Chuan Huang, M. Tsai, Kuan-Yu Liao, C. Li, M. Chang, Min-Hsiu Tsai, C. Tseng, Hung-Chun Li
{"title":"Test clock domain optimization for peak power supply noise reduction during scan","authors":"Jen-Yang Wen, Yu-Chuan Huang, M. Tsai, Kuan-Yu Liao, C. Li, M. Chang, Min-Hsiu Tsai, C. Tseng, Hung-Chun Li","doi":"10.1109/TEST.2011.6139163","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139163","url":null,"abstract":"This paper presents a design for testability (DfT) technique to reduce the peak power supply noise (PPSN) during scan chain shifting. The proposed partition technique reduces the maximum flip-flop density that belongs to the same test clock. The experimental data on large benchmark circuits show that IR drop are reduced by 38.7% on the average compared with the circuit before optimization. Our proposed technique quickly optimizes a half million gate design within 14 minutes while the commercial IR drop simulation tool took over 3 hours.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129354518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation into voltage and process variation-aware manufacturing test","authors":"B. Ingelsson","doi":"10.1109/TEST.2011.6139138","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139138","url":null,"abstract":"Traditional test methods that use abstract fault models potentially results in low defect coverage and test escapes for ICs with multiple supply voltage (Vdd) settings for adaptive power management, and in the presence of process variation. In this paper, we address two important defect types, resistive bridge defects and full open defects, and present foundational work on variation-aware test methods. To test ICs with multiple Vdds, Multi-Vdd Test Generation (MVTG) produces Vdd-specific test sets, such that tests are applied using the most effective Vdd. For Process Variation-aware Test Generation (PVTG), we target the most significant test escapes, guided by a novel process variation-aware metric for test quality, called test robustness. We implemented our test methods, and integrated them into a flow of commercial EDA tools. Experimental results on benchmark designs and realistic defects, extracted from layout, show that our test methods achieve high defect coverage while keeping the test sets size low. This serves as proof-of-concept for variation-aware test.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122094092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Pre-bond probing of TSVs in 3D stacked ICs","authors":"Brandon Noia, K. Chakrabarty","doi":"10.1109/TEST.2011.6139179","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139179","url":null,"abstract":"Through-Silicon Via (TSV)-based 3D stacked ICs (SICs) are becoming increasingly important in the semiconductor industry, yet pre-bond testing of TSVs continues to be difficult with current technologies. In this paper, we present a test and DFT method for pre-bond testing of TSVs using probe technology. We describe the on-die test architecture and probe technique needed for TSV testing, in which individual probe needles make contact with multiple TSVs at a time. We also describe methods for capacitance and resistance measurements, as well as stuck-at and leakage tests. Simulation results using HSPICE are presented for a TSV network. We demonstrate that we can achieve high resolution in these measurements, and therefore high accuracy in defect detection when we target one or multiple TSVs at a time. We also show that the test outcome is reliable even in the presence of process variations or multiple defective TSVs.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114203783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Manish Sharma, Avijit Dutta, Wu-Tung Cheng, B. Benware, M. Kassab
{"title":"A novel Test Access Mechanism for failure diagnosis of multiple isolated identical cores","authors":"Manish Sharma, Avijit Dutta, Wu-Tung Cheng, B. Benware, M. Kassab","doi":"10.1109/TEST.2011.6139171","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139171","url":null,"abstract":"This paper introduces a novel Test Access Mechanism (TAM) for chips with multiple isolated identical cores through which all the cores can be tested in parallel and at the same time accurate failure diagnosis can be achieved while requiring similar test resources (tester memory and tester channels) as for a single core. The proposed pipelined architecture relies on forming nonlinear equations on a very limited number of output pins that compress the outputs from the identical cores and solve them off-chip to reproduce the failure information of each core. A very nice feature of the proposed scheme is that the number of observation pins required to achieve a desirable level of diagnostic resolution does not scale with the number of identical cores and can practically be kept constant.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126670320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rajesh Mittal, Lakshmanan Balasubramanian, A. Sontakke, H. Parthasarathy, P. Narayanan, Puneet Sabbarwal, R. Parekhji
{"title":"DFT for extremely low cost test of mixed signal SOCs with integrated RF and power management","authors":"Rajesh Mittal, Lakshmanan Balasubramanian, A. Sontakke, H. Parthasarathy, P. Narayanan, Puneet Sabbarwal, R. Parekhji","doi":"10.1109/TEST.2011.6139128","DOIUrl":"https://doi.org/10.1109/TEST.2011.6139128","url":null,"abstract":"Mixed signal SOCs with integrated RF and power management modules have some distinct requirements associated with them. They are often used in portable and battery operated consumer applications, which are extremely cost and power sensitive. This translates into a few unique design and test constraints on the amount of DFT logic integrated, the permissible test time, and power-up of individual modules in the SOC. In this paper, we propose some novel DFT and test techniques which have been devised keeping in mind these constraints, and illustrate how test cost has been significantly reduced in such cost and power constrained mixed signal SOCs. The paper discusses three significant components of the test time and techniques for their reduction through smarter DFT and BIST: (i) RF tests in multiple radio modules, (ii) test and calibration of complex power management logic and voltage regulators, and (iii) improved scan ATPG for all the digital logic. These techniques are being integrated into Texas Instruments' embedded SOCs designed for such portable application, resulting in an overall test cost reduction by half over the previous generation of such SOCs.","PeriodicalId":260931,"journal":{"name":"2011 IEEE International Test Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125702658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}