{"title":"Understanding Water Ingress in Scanning Acoustic Microscopy and a Method to Observe Defects that are Open to the Surface","authors":"Adam Benak, R. Devaney","doi":"10.31399/ASM.CP.ISTFA2019P0154","DOIUrl":"https://doi.org/10.31399/ASM.CP.ISTFA2019P0154","url":null,"abstract":"\u0000 Scanning Acoustic Microscopy (SAM) is a very important tool in the evaluation of molded plastic electronic components. SAM is used to non-destructively determine the configuration and quality of components using ultrasonic sound waves and consequently is an important test step in the screening, Destructive Physical Analysis (DPA) or Failure Analysis (FA) of plastic components. SAM is performed in a water bath so if internal defects are open to the surface of the device they can fill with water and become invisible to SAM.","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125156203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ultra-Thinning of Silicon for Backside Fault Isolation","authors":"M. Campin, P. Nowakowski, P. Fischione","doi":"10.31399/asm.cp.istfa2019p0465","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0465","url":null,"abstract":"\u0000 The size of devices on state-of-the-art integrated circuits continues to decrease with each technology node, which drives the need to continually improve the resolution of electrical failure analysis techniques. Solid immersion lenses are commonly used in combination with infrared light to perform analysis from the backside of the device, but typically only have resolutions down to ~200 nm. Improving resolution beyond this requires the use of shorter wavelengths, which in turn requires a silicon thickness in the 2 to 5 µm range. Current ultra-thinning techniques allow consistent thinning to ~10 µm. Thinning beyond this, however, has proven challenging. In this work, we show how broad beam Ar ion milling can be used to locally thin a device’s backside silicon until the remaining silicon thickness is < 5 µm.","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131947563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mukhil Azhagan M. S, Dhwani Mehta, Hangwei Lu, Sudarshan Agrawal, M. Tehranipoor, D. Woodard, N. Asadizanjani, Praveen Chawla
{"title":"A Review on Automatic Bill of Material Generation and Visual Inspection on PCBs","authors":"Mukhil Azhagan M. S, Dhwani Mehta, Hangwei Lu, Sudarshan Agrawal, M. Tehranipoor, D. Woodard, N. Asadizanjani, Praveen Chawla","doi":"10.31399/asm.cp.istfa2019p0256","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0256","url":null,"abstract":"\u0000 Globalization and complexity of the PCB supply chain has made hardware assurance a challenging task. An automated system to extract the Bill of Materials (BoM) can save time and resources during the authentication process, however, there are numerous imaging modalities and image analysis techniques that can be used to create such a system. In this paper we review different imaging modalities and their pros and cons for automatic PCB inspection. In addition, image analysis techniques commonly used for such images are reviewed in a systematic way to provide a direction for future research in this area.\u0000 Index Terms—Component Detection, PCB, Authentication, Image Analysis, Machine Learning","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123943791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Machine Learning Assisted Signal Analysis in Acoustic Microscopy for Non-Destructive Defect Identification","authors":"M. Kögel, S. Brand, F. Altmann","doi":"10.31399/asm.cp.istfa2019p0035","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0035","url":null,"abstract":"\u0000 Signal processing and data interpretation in scanning acoustic microscopy is often challenging and based on the subjective decisions of the operator, making the defect classification results prone to human error. The aim of this work was to combine unsupervised and supervised machine learning techniques for feature extraction and image segmentation that allows automated classification and predictive failure analysis on scanning acoustic microscopy (SAM) data. In the first part, conspicuous signal components of the time-domain echo signals and their weighting matrices are extracted using independent component analysis. The applicability was shown by the assisted separation of signal patterns to intact and defective bumps from a dataset of a CPU-device manufactured in flip-chip technology. The high success-rate was verified by physical cross-sectioning and high-resolution imaging. In the second part, the before mentioned signal separation was employed to generate a labeled dataset for training and finetuning of a classification model based on a one-dimensional convolutional neural network. The learning model was sensitive to critical features of the given task without human intervention for classification between intact bumps, defective bumps and background. This approach was evaluated on two individual test samples that contained multiple defects in the solder bumps and has been verified by physical inspection. The verification of the classification model reached an accuracy of more than 97% and was successfully applied to an unknown sample which demonstrates the high potential of machine learning concepts for further developments in assisted failure analysis.","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126444520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"GHz-SAM for Warped Samples using HiSA","authors":"C. D. D. Le, P. Hoffrogge, M. Böckler","doi":"10.31399/asm.cp.istfa2019p0025","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0025","url":null,"abstract":"\u0000 GHz-SAM using toneburst transducers is a method currently lacking the possibility to measure warped samples easily because large parts of such samples are out of focus due to the limited depth of focus of these types of transducers. This paper shows an approach to use the already established HiSA (High Speed Axis) method to overcome this disadvantage. Therefore warpage of the sample is measured by a white-light interferometer. The detected bow is parametrized and submitted in the control electronics of the HiSA. With this data the HiSA is enabled to keep the distance between sample and transducer precisely constant. This allows eliminating the influence of the warpage on the performance of this method and therefore highly increases the image quality.","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132818277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Solder Bump Joint Failure Investigation: From Sample Preparation to Advanced Structural Characterizations and Strain Measurements","authors":"P. Nowakowski, M. Ray, P. Fischione","doi":"10.31399/asm.cp.istfa2019p0043","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0043","url":null,"abstract":"\u0000 This paper describes the detailed sample preparation of a solder joint at the level between a semiconductor package and board. Different sample preparation techniques are described and compared. Preparing and targeting a large sample area containing multiple solder bumps is discussed. The sample preparation methods will then be confirmed by advanced structural characterization and strain measurement. The presence of strain is associated with the development of cracks and delamination at the solder joint interface.","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"312 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114293309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Applying a Significant Protection Layer on Double Ex Situ Lift-out TEM Specimens to Protect Against Ion Beam Impact","authors":"Chun-Hung Lin, Hsin-Cheng Hsu, Tsung-Yi Lin, Ruihua Lin, I-An Chen, Pe-Lin Hsu, Chaoqing Chen, Iris Hsieh, C. Yeh, N. Lian, Ta-Hone Yang, Kuang-Chao Chen","doi":"10.31399/asm.cp.istfa2019p0215","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0215","url":null,"abstract":"\u0000 Protection layers on double ex situ lift-out TEM specimens were investigate in this paper and two protection layer approaches for double INLO or double EXLO were introduced. The improved protection methods greatly decreased the damage layer on the top surface from 90 nm to 5 nm (or lower) during FIB milling. According to the property of different sample and its preliminary treatment in the FIB, we have the satisfactory approaches to be applied. Using this improved protection method, we demonstrate the structures within the TEM lamella can be observed without ion beam damage/implantation during FIB","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131288132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Demarest, B. Austin, J. Arjavac, M. Breton, M. Bergendahl, M. Biedrzycki, C. Boye, B. Cilingiroglu, J. Gaudiello, J. Hager, S. Matham, K. Nguyen, M. Persala, M. Rizzolo, S. Shaar, S. Teehan
{"title":"Transmission Electron Microscopy Sample Preparation By Design Based Recipe Writing in a DBFIB Part 2","authors":"J. Demarest, B. Austin, J. Arjavac, M. Breton, M. Bergendahl, M. Biedrzycki, C. Boye, B. Cilingiroglu, J. Gaudiello, J. Hager, S. Matham, K. Nguyen, M. Persala, M. Rizzolo, S. Shaar, S. Teehan","doi":"10.31399/asm.cp.istfa2019p0470","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0470","url":null,"abstract":"\u0000 Demarest et al. concluded in their previous report that a ten times improvement in placement accuracy was required to enable automated transmission electron microscopy (TEM) sample preparation, and wafer alignment by GDS coordinates demonstrated a factor of two improvement in comparison to optical or scanning electron microscope based processes. This paper provides an additional update on this project. The study is about a GDS based process developed to simplify the complicated workflow for examining discrete electrical failures. The results of this study indicated that the recipe prototype developed on a test structure had a unique feature that consisted of an approximately 45nm by 200nm Cu line segment. Executing the prototype recipe on a wafer at the same process point fabricated 6 months after the original wafer yielded four identical successful samples of about 30nm sample thickness. This technique can thus be extended to large 2D arrays of small structures.","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122826012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Brand, M. Kögel, C. Große, F. Altmann, B. Lai, Qingqing Wang, James Vickers, D. Tien, Bernice Zee, Qiu Wen
{"title":"Advanced 3D Localization in Lock-in Thermography Based on the Analysis of the TRTR (Time-Resolved Thermal Response) Received Upon Arbitrary Waveform Stimulation","authors":"S. Brand, M. Kögel, C. Große, F. Altmann, B. Lai, Qingqing Wang, James Vickers, D. Tien, Bernice Zee, Qiu Wen","doi":"10.31399/asm.cp.istfa2019p0001","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0001","url":null,"abstract":"\u0000 Lock-in thermography (LIT) has been successfully applied in different excitation and analysis modes including classical LIT, analysis of the time-resolved temperature response (TRTR) upon square wave excitation and TRTR analysis in combination with arbitrary waveform stimulation. The results obtained by both classical square wave- and arbitrary waveform stimulation showed excellent agreement. Phase and amplitudes values extracted by classical LIT analysis and by Fourier analysis of the time resolved temperature response also coincided, as expected from the underlying system theory. In addition to a conceptual test vehicle represented by a point-shaped thermal source, two semiconductor packages with actual defects were studied and the obtained results are presented herein. The benefit of multi-parametric imaging for identification of a defect’s lateral position in the presence of multiple hot spots was also demonstrated. For axial localization, the phase shift values have been extracted as a function of frequency [4]. For comparative validation, LIT analyses were conducted in both square wave and arbitrary waveform excitation using custom designed and sample-specific stimulation signals. In both cases result verification was performed employing X-ray, scanning electron microscopy (SEM) and energy dispersive x-ray (EDX) as complementary techniques.","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127814641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer","authors":"Natsuko Asano, S. Asahina, N. Erdman","doi":"10.31399/asm.cp.istfa2019p0286","DOIUrl":"https://doi.org/10.31399/asm.cp.istfa2019p0286","url":null,"abstract":"\u0000 Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.","PeriodicalId":259671,"journal":{"name":"ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129336829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}