Advanced 3D Localization in Lock-in Thermography Based on the Analysis of the TRTR (Time-Resolved Thermal Response) Received Upon Arbitrary Waveform Stimulation

S. Brand, M. Kögel, C. Große, F. Altmann, B. Lai, Qingqing Wang, James Vickers, D. Tien, Bernice Zee, Qiu Wen
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引用次数: 4

Abstract

Lock-in thermography (LIT) has been successfully applied in different excitation and analysis modes including classical LIT, analysis of the time-resolved temperature response (TRTR) upon square wave excitation and TRTR analysis in combination with arbitrary waveform stimulation. The results obtained by both classical square wave- and arbitrary waveform stimulation showed excellent agreement. Phase and amplitudes values extracted by classical LIT analysis and by Fourier analysis of the time resolved temperature response also coincided, as expected from the underlying system theory. In addition to a conceptual test vehicle represented by a point-shaped thermal source, two semiconductor packages with actual defects were studied and the obtained results are presented herein. The benefit of multi-parametric imaging for identification of a defect’s lateral position in the presence of multiple hot spots was also demonstrated. For axial localization, the phase shift values have been extracted as a function of frequency [4]. For comparative validation, LIT analyses were conducted in both square wave and arbitrary waveform excitation using custom designed and sample-specific stimulation signals. In both cases result verification was performed employing X-ray, scanning electron microscopy (SEM) and energy dispersive x-ray (EDX) as complementary techniques.
基于任意波形刺激下TRTR(时间分辨热响应)分析的锁定热成像高级三维定位
锁相热像仪(LIT)已经成功地应用于不同的激励和分析模式,包括经典LIT、方波激励下的时间分辨温度响应(TRTR)分析以及与任意波形激励相结合的TRTR分析。经典方波和任意波形的模拟结果均显示出良好的一致性。通过经典LIT分析和时间分辨温度响应的傅里叶分析提取的相位和振幅值也符合基础系统理论的预期。除了以点状热源为代表的概念试验车外,还对两个实际存在缺陷的半导体封装进行了研究,并给出了研究结果。在存在多个热点的情况下,多参数成像对识别缺陷的横向位置的好处也得到了证明。对于轴向定位,相移值作为频率的函数被提取[4]。为了进行比较验证,使用定制设计和特定样品的刺激信号,在方波和任意波形激励下进行了LIT分析。在这两种情况下,结果验证采用x射线,扫描电子显微镜(SEM)和能量色散x射线(EDX)作为补充技术进行。
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