2009 11th Electronics Packaging Technology Conference最新文献

Interfacial reaction and dissolution behavior of Cu substrate in molten Sn-3.8Ag-0.7Cu-nano Mo composite solder Cu衬底在sn -3.8 ag -0.7Cu-纳米Mo复合钎料中的界面反应及溶解行为

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416407

M. M. Arafat, A. Haseeb

{"title":"Interfacial reaction and dissolution behavior of Cu substrate in molten Sn-3.8Ag-0.7Cu-nano Mo composite solder","authors":"M. M. Arafat, A. Haseeb","doi":"10.1109/EPTC.2009.5416407","DOIUrl":"https://doi.org/10.1109/EPTC.2009.5416407","url":null,"abstract":"In electronic packaging, solder alloy is used to connect the electronic devices on the copper pad to switch on the functionality of those devices. When solid copper comes in contact with a liquid solder alloy, reaction takes place and intermetallic compound (IMC) layer forms at the solid-liquid interface. To reduce the diffusion of the substrate, the major issue is to slow down the interfacial reactions between the solder and the substrate metallization. The diffusion rate depends to a large extent on the elemental compositions of the solder and the solid metal. In this study, Cu wire having a diameter 250 µm is immersed in the liquid composite solder at 250ºC up to 15 min. Composite solder were prepared by adding various amount of nano Mo into the Sn-3.8Ag-0.7Cu (SAC) solder paste. Generally the dissolution rate increases with increasing time but decreases with increasing the nano Mo content in the SAC solder. The IMC thickness increases with increasing the reaction time but nano Mo can hinder the growth of IMC layer. As a result, nano Mo is effective for the SAC solder to reduce the diffusion of copper substrate.","PeriodicalId":256843,"journal":{"name":"2009 11th Electronics Packaging Technology Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127143377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Design of a fully-enclosed disposable bio-micro fluidic cartridge with self-contained reagents for infectious diseases diagnostic applications 设计一个完全封闭的一次性生物微流体盒与独立的试剂用于传染病诊断应用

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416555

Ling Xie, M. Chew, C. Premachandran, Li Zhang, Siti Rafeah Mohamed Rafei, H. Ji, R. Rajoo, K. Tang, Yu Chen, K. Teo, K. S. H. Lau, V. Chow, C. Heng, Kian-Leong Ong, R. Tan

{"title":"Design of a fully-enclosed disposable bio-micro fluidic cartridge with self-contained reagents for infectious diseases diagnostic applications","authors":"Ling Xie, M. Chew, C. Premachandran, Li Zhang, Siti Rafeah Mohamed Rafei, H. Ji, R. Rajoo, K. Tang, Yu Chen, K. Teo, K. S. H. Lau, V. Chow, C. Heng, Kian-Leong Ong, R. Tan","doi":"10.1109/EPTC.2009.5416555","DOIUrl":"https://doi.org/10.1109/EPTC.2009.5416555","url":null,"abstract":"To meet the requirements of infectious diseases identification, a sealed and fully enclosed cartridge with self-contained reagents was developed. The inlet and outlet ports of the cartridge are self-sealing. The waste produced during the diagnostic process was collected in a waste bag, which is enclosed in the cartridge. Two different types of waste bags were designed to reduce the overall thickness of the cartridge. A silicon chip with filter, binder and mixer components was integrated into the microfluidic cartridge for the extraction of the nucleic acid sample from the infectious virus sample. By using a switch valve the nucleic acid sample and waste were split and collected in a PCR tube and a waste bag respectively. The PCR tube, modified with self-sealing elastomer cap, was used for collecting the nucleic acid. The whole extraction process was carried out automatically in a small table-top actuator system. With the dengue virus as the input sample, RNA (ribonucleic acid) is extracted and subjected to RT-PCR (reverse transcription polymerase chain reaction) which detected the diagnostic size of the target amplicon.","PeriodicalId":256843,"journal":{"name":"2009 11th Electronics Packaging Technology Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126962353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Effect of strain rate and temperature on tensile flow behavior of SnAgCu nanocomposite solders 应变速率和温度对SnAgCu纳米复合钎料拉伸流动行为的影响

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416539

B. Rao, K. M. Kumar, K. Zeng, A. Tay, V. Kripesh

引用次数: 4

Optimization of ultrasound and bond force to reduce pad stress in thermosonic Cu ball bonding 优化超声和键合力以减小热超声铜球键合中的焊盘应力

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416580

A. Shah, M. Mayer, Y. Zhou, J. Persic, J. Moon

引用次数: 13

Analysis and modeling of liquid cooled heat sinks with alternating honeycomb structure 交替蜂窝结构液冷散热器的分析与建模

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416561

H.Y. Zhang, Y. Mui, M. Tarin

引用次数: 1

Warpage improvement for large die flip chip package 大芯片倒装封装翘曲改进

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416574

B. Xiong, Mj Lee, T. Kao

{"title":"Warpage improvement for large die flip chip package","authors":"B. Xiong, Mj Lee, T. Kao","doi":"10.1109/EPTC.2009.5416574","DOIUrl":"https://doi.org/10.1109/EPTC.2009.5416574","url":null,"abstract":"In the case of field programmable gate array (FPGA) chips, as the demand for higher speeds and enhanced functionality increases, the size of the flip chip die grows accordingly to offer higher number of logic cells. Large flip chip die also requires a large package for efficient signal routing. This paper shows a warpage improvement study including lid design and process optimization to solve warpage issue of large die FPGA flip chip packages with more fragile bump (23 * 23 mm die and 42.5 * 42.5 mm package). Though package warpage is well controlled for standard eutectic bump BOM (bill of materials) and process, it encountered problem when using higher Tg underfill, which is for better bump protection and reliability. A detailed finite element analysis was performed to simulate the effect of different lid structures (foot width, thickness etc) and lid materials (Cu, Al etc) on warpage. Actual units were built using improved lid structures and process. It was found that thicker Cu lid and lower underfill cure temperature are effective ways for warpage control, less than 8 mils warpage was achieved by lid design and process optimization for this 42.5 mm package with 23 mm die with more fragile bump.","PeriodicalId":256843,"journal":{"name":"2009 11th Electronics Packaging Technology Conference","volume":"41 11-12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114037206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Effect of reflow profile and thermal cycle ageing on the intermetallic formation and growth in lead-free soldering 回流型和热循环时效对无铅焊接中金属间形成和生长的影响

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416398

P. K. Bernasko, S. Mallik, Nduka Nnamdi (Ndy) Ekere, A. Seman, G. Takyi

{"title":"Effect of reflow profile and thermal cycle ageing on the intermetallic formation and growth in lead-free soldering","authors":"P. K. Bernasko, S. Mallik, Nduka Nnamdi (Ndy) Ekere, A. Seman, G. Takyi","doi":"10.1109/EPTC.2009.5416398","DOIUrl":"https://doi.org/10.1109/EPTC.2009.5416398","url":null,"abstract":"The formation and growth of intermetallic compound layer thickness is one of the important issues in search for reliable electronic and electrical connections. Intermetallic compounds (IMCs) are an essential part of solder joints. At low levels, they have a strengthening effect on the joint; but at higher levels, they tend to make solder joints more brittle. If the solder joint is subjected to long-standing exposure of high temperature, this could result in continuous growth of intermetallic compound layer. The brittle intermetallic compound layer formed in this way is very much prone to fracture and could therefore lead to mechanical and electrical failure of the joint. Therefore, the primary aim of this study is to investigate the growth of intermetallic compound layer thickness subjected to five different reflow profiles. The study also looks at the effect of three different temperature cycles (with maximum cycle temperature of 25 °C, 40 °C and 60 °C) on intermetallic compound formation and their growth behaviour. Two different Sn-Ag-Cu solder pastes (namely paste P1 and paste P2) which were different in flux medium, were used for the study. The result showed that the growth of intermetallic compound layer thickness was a function of ageing temperature. It was found that the rate of growth of intermetallic compound layer thickness of paste P1 was higher than paste P2 at the same temperature condition. This behaviour could be related to the differences in flux mediums of solder paste samples used.","PeriodicalId":256843,"journal":{"name":"2009 11th Electronics Packaging Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128524981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Plastic circuit reliability and design for recycling 塑料电路的可靠性和可回收设计

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416425

D. V. Thiel, Madhu Neeli, S. Raj

引用次数: 12

Effect of bonding and aging temperatures on bond strengths of Cu with 75Sn25In solders 焊接温度和时效温度对Cu与75Sn25In钎料结合强度的影响

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416527

W. A. Sasangka, C. Gan, C. Thompson, W. Choi, J. Wei

引用次数: 6

Influence of plasma cleaning on silicon die back adhesion performance 等离子清洗对硅模背粘附性能的影响

2009 11th Electronics Packaging Technology Conference Pub Date : 2009-12-01 DOI: 10.1109/EPTC.2009.5416447

Yeqing Su, Xiao Wei, C. Hu, Y. W. Jiang, Poh Zi-Song

{"title":"Influence of plasma cleaning on silicon die back adhesion performance","authors":"Yeqing Su, Xiao Wei, C. Hu, Y. W. Jiang, Poh Zi-Song","doi":"10.1109/EPTC.2009.5416447","DOIUrl":"https://doi.org/10.1109/EPTC.2009.5416447","url":null,"abstract":"Adhesion performance between silicon die back and paste is one of major concerns in die attach process during semiconductor assembly. A peculiar phenomenon that attached dies were flied off from pads of lead frame was reported during assembling in power QFN packages with occurrence rate at ppm. level. Backside surface of failed dies are very “clean” without any paste residual. It is mostly concerned backside surface was contaminated. In this study, attach experiment was conducted on the dropped dies with/without plasma treatment as well as normal dies. Their adhesion performance was investigated through shearing test. Simultaneously, the characteristic of backside surface with/without plasma treatment including wettability, composition and roughness was analyzed. As a result, it was indicated plasma cleaning improves the interfacial adhesion performance between silicon die and paste significantly. The similar failure mode occurred on the dropped dies without plasma, but after plasma clean, paste residual can be found on die backside and pad surface with adhesion strength increased as much again. The plasma cleaning improvement is also demonstrated by wetting test and component analysis. The wetting performance was modified from hydrophobicity to hydrophilicity and carbon percentage was reduced to low level with surface cleanness. There is no significant difference for roughness before/after plasma treatment. Furthermore, the characteristic of contaminant and possible resource introduced also be addressed in this paper.","PeriodicalId":256843,"journal":{"name":"2009 11th Electronics Packaging Technology Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121674106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1