大芯片倒装封装翘曲改进

B. Xiong, Mj Lee, T. Kao
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引用次数: 10

摘要

在现场可编程门阵列(FPGA)芯片的情况下,随着对更高速度和增强功能的需求增加,倒装芯片的尺寸也相应增加,以提供更多数量的逻辑单元。大型倒装芯片也需要大型封装来实现高效的信号路由。为解决凸点易碎的大芯片FPGA倒装封装(23 * 23 mm芯片和42.5 * 42.5 mm封装)的翘曲问题,本文进行了包括盖设计和工艺优化在内的翘曲改进研究。虽然标准共晶凸包BOM(物料清单)和工艺可以很好地控制封装翘曲,但使用高Tg底填料会遇到问题,这是为了更好地保护凸包和提高可靠性。通过详细的有限元分析,模拟了不同盖子结构(脚宽、厚度等)和盖子材料(Cu、Al等)对翘曲的影响。实际单元是使用改进的盖子结构和工艺建造的。结果表明,采用较厚的Cu盖和较低的底填固化温度是控制翘曲的有效方法,通过对42.5 mm封装和23mm模具的设计和工艺优化,使其翘曲量小于8mm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Warpage improvement for large die flip chip package
In the case of field programmable gate array (FPGA) chips, as the demand for higher speeds and enhanced functionality increases, the size of the flip chip die grows accordingly to offer higher number of logic cells. Large flip chip die also requires a large package for efficient signal routing. This paper shows a warpage improvement study including lid design and process optimization to solve warpage issue of large die FPGA flip chip packages with more fragile bump (23 * 23 mm die and 42.5 * 42.5 mm package). Though package warpage is well controlled for standard eutectic bump BOM (bill of materials) and process, it encountered problem when using higher Tg underfill, which is for better bump protection and reliability. A detailed finite element analysis was performed to simulate the effect of different lid structures (foot width, thickness etc) and lid materials (Cu, Al etc) on warpage. Actual units were built using improved lid structures and process. It was found that thicker Cu lid and lower underfill cure temperature are effective ways for warpage control, less than 8 mils warpage was achieved by lid design and process optimization for this 42.5 mm package with 23 mm die with more fragile bump.
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