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10th IEEE International Conference on Nanotechnology最新文献

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Real-time monitoring of nanoparticles at a metal nanopowder manufacturing workplace 金属纳米粉末制造车间纳米颗粒的实时监测
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5697881
G. Bae, Seungbok Lee, Dong-chun Shin, Dong Jin Lee
{"title":"Real-time monitoring of nanoparticles at a metal nanopowder manufacturing workplace","authors":"G. Bae, Seungbok Lee, Dong-chun Shin, Dong Jin Lee","doi":"10.1109/NANO.2010.5697881","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697881","url":null,"abstract":"In nanomaterial manufacturing workplaces, there is a potential risk due to nanomaterial exposure to workers. To investigate this possibility, the number concentration and the size distribution of nanoparticles were continuously monitored using an ultrafine condensation particle counter and a scanning mobility particle sizer, respectively at a metal nanopowder manufacturing workplace during the wire electrical explosion process. From this field study, nanoparticles smaller than 30 nm in diameter were dominantly observed. One event showing high particle number concentration that was approximately seven times higher than background level was also detected for a short period. Therefore, it is recommended to install a reduction measure for safe workplace environment.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127104690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
6 inch full field wafer size nanoimprint lithography for photonic crystals patterning 用于光子晶体图像化的6英寸全场晶圆尺寸纳米压印光刻
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5697760
M. Hornung, R. Ji, M. Verschuuren, Robert van den Laar
{"title":"6 inch full field wafer size nanoimprint lithography for photonic crystals patterning","authors":"M. Hornung, R. Ji, M. Verschuuren, Robert van den Laar","doi":"10.1109/NANO.2010.5697760","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697760","url":null,"abstract":"The HB-LED market grew rapidly in the last years and will see grater than 50% growth this year [1]. The current applications are dominated by portable device backlighting, e.g. cell phones, PDAs, GPS, laptop etc. In order to open the general lighting market doors the luminous efficiency needs to be improved significantly. Photonic crystal (PhC) structures in LEDs have been demonstrated to enhance light extraction efficiency on the wafer level by researchers [2]. However, there is still a great challenge to fabricate PhC structures on LED wafers cost-effectively. Nanoimprint lithography (NIL) is one promising technology for manufacturing of electronic devices of low nm scale. However, the current NIL techniques with rigid stamps rely strongly on the substrate flatness and the production atmosphere. UV-NIL with flexible stamps, e.g. PDMS stamps, allows the large-area imprint in a single step and is less-sensitive to the production atmosphere. Unfortunately, the resolution is normally limited due to stamp distortion caused by imprint pressure. The NIL technique developed by Philips Research and SUSS MicroTec, substrate conformal imprint lithography (SCIL), bridges the gap between UV-NIL with rigid stamp for best resolution and soft stamp for large-area patterning.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130570138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
SiO2/Si3N4 bilayer sloped etching for 20nm InAlAs/InGaAs metamorphic HEMTs 20nm InAlAs/InGaAs变质hemt的SiO2/Si3N4双层斜刻蚀
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5697890
Jongwook Kim, Minseong Lee, K. Seo
{"title":"SiO2/Si3N4 bilayer sloped etching for 20nm InAlAs/InGaAs metamorphic HEMTs","authors":"Jongwook Kim, Minseong Lee, K. Seo","doi":"10.1109/NANO.2010.5697890","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697890","url":null,"abstract":"We developed a 20 nm gate process using SiO2/Si3N4 bilayer sloped etching. Selective and sloped etching of bilayer makes this technology realizable. A HEMT with this technology has merits of fine length definition beyond the limit of electron beam (E-beam) lithography system. Using this technology, we experimentally demonstrated that a 20 nm gate length from initial 50 nm line pattern. The fabricated InAlAs/InGaAs metamorphic HEMTs (MHEMTs) with 20 nm T-gate pattern have high DC and RF performance characteristics, a transconductance of 1.67 S/mm, a cutoff frequency ft of 460 GHz.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121670859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Metal optics, optical antennas, and spontaneous hyper-emission 金属光学，光学天线，自发超发射
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5697734
E. Yablonovitch
{"title":"Metal optics, optical antennas, and spontaneous hyper-emission","authors":"E. Yablonovitch","doi":"10.1109/NANO.2010.5697734","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697734","url":null,"abstract":"For almost 50 years, stimulated emission has been stronger and far more important than spontaneous emission. Indeed spontaneous emission has been looked down upon, as a weak effect. Now a new science of enhanced spontaneous emission is emerging, that will make spontaneous emission faster than any possible stimulated emission. This new science depends upon the use of nanoscale metallic optical elements, as antennas for spontaneous emission.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125222064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Lab-on-a-Chip Technology for Integrative Bioengineering 集成生物工程的芯片实验室技术
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5698049
J. Park
{"title":"Lab-on-a-Chip Technology for Integrative Bioengineering","authors":"J. Park","doi":"10.1109/NANO.2010.5698049","DOIUrl":"https://doi.org/10.1109/NANO.2010.5698049","url":null,"abstract":"Recent progress of lab-on-a-chip technology is challenging for the development of nanobiotechnology and integrative bioengineering. In this work, several novel microfluidic devices for biotechnology and bioengineering, based on the synergetic integration of miniaturization technology to biology, chemistry, and medicine, are described. Currently, we focus on the development of a nanobiosensor, microfluidic device and lab-on-a-chip as a new platform for biological sample processing, separation, and detection, including optoelectrofluidic manipulation, hydrophoretic separation, magnetophoretic assay, and cell-based assay. The final application of these research activities covers several aspects of biomolecular diagnostics, micro total analysis system (μTAS), cell-based screening platform, nanobio device, etc.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122801566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Micromachined planar probe using half-SIW and half-shielded stripline structure for permittivity measurement 微机械平面探头采用半siw和半屏蔽带状线结构进行介电常数测量
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5697874
Yong-seung Bang, Nam-Gon Kim, Jung-Mu Kim, C. Cheon, Y. Kwon, Yong-Kweon Kim
{"title":"Micromachined planar probe using half-SIW and half-shielded stripline structure for permittivity measurement","authors":"Yong-seung Bang, Nam-Gon Kim, Jung-Mu Kim, C. Cheon, Y. Kwon, Yong-Kweon Kim","doi":"10.1109/NANO.2010.5697874","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697874","url":null,"abstract":"This paper reports on a micromachined planar type probe based on a novel hybrid shielded stripline. The proposed structure is for a broadband transverse electromagnetic (TEM) single-mode propagation using substrate integrated waveguide (SIW) and conventional shielded stripline. We suggested a novel probe structure that composed of half-SIW and half-shielded stripline, which combined through a benzocyclobutene (BCB) bonding layer. The structural concept and simple fabrication method has been introduced, and the S11 in air was measured from 0.5 GHz to 30 GHz. The permittivity measurement of 0.9 % saline has been performed to validate the proposed structure at frequencies from 0.5 GHz to 20 GHz.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131234698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
TiO2 nanoparticle-nanofiber composites and their application in dye-sensitized solar cells 二氧化钛纳米颗粒-纳米纤维复合材料及其在染料敏化太阳能电池中的应用
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5697786
P. Heil, Hyunmin Kang, Hyungsoo Choi, K. Kim
{"title":"TiO2 nanoparticle-nanofiber composites and their application in dye-sensitized solar cells","authors":"P. Heil, Hyunmin Kang, Hyungsoo Choi, K. Kim","doi":"10.1109/NANO.2010.5697786","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697786","url":null,"abstract":"Dye-sensitized solar cells exhibit promising efficiencies relative to the low cost of materials and fabrication, and improvements in efficiency can be achieved through the introduction of controllable nanostructures which enhance light-harvesting and charge transport characteristics. Electrospun TiO2 nanofiber networks present a suitable structure for both light scattering and charge transport, though they exhibit insufficient mechanical properties and surface area compared to conventional nanoparticle networks. In this work TiO2 nanoparticle-nanofiber composite networks were generated, and the formation of unique fiber-pore structures was characterized and elucidated. The results demonstrated that enhancement in light-scattering by formation of the fiber-pore structures increased the efficiency of NP-NF composite DSSCs by 10% relative to conventional electrodes. The excellent control of the structural dimensions encourages promising application of these composites for DSSCs and other areas of electronics and optoelectronics.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126979381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spiral-scan Atomic Force Microscopy: A constant linear velocity approach 螺旋扫描原子力显微镜:恒定线速度方法
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5698063
I. A. Mahmood, S. Moheimani
{"title":"Spiral-scan Atomic Force Microscopy: A constant linear velocity approach","authors":"I. A. Mahmood, S. Moheimani","doi":"10.1109/NANO.2010.5698063","DOIUrl":"https://doi.org/10.1109/NANO.2010.5698063","url":null,"abstract":"This paper describes an alternative method to the widely-used raster-scan technique for Atomic Force Microscopy (AFM). In this method, the sample is scanned in a spiral pattern instead of the well established raster trajectory. A spiral pattern is produced by applying cosine and sine signals with slowly varying amplitudes to the x-axis and y-axis of an AFM scanner respectively. In order to ensure that the spiral trajectory travels at a constant linear velocity (CLV), frequency and amplitude of the input signals are varied simultaneously in a way that the linear velocity of the scanner is kept constant. Experimental results obtained by implementing the CLV spiral scan on a commercial AFM indicate that, compared with the raster-scan method, high-quality AFM images of equal area and pitch can be generated two times faster and using half of the total traveled distance.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133978977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
GaN nanowires as electron field emitters 氮化镓纳米线作为电子场发射体
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5697772
Bohan Wang, Kuang-Yuan Hsu, Y. Tzeng
{"title":"GaN nanowires as electron field emitters","authors":"Bohan Wang, Kuang-Yuan Hsu, Y. Tzeng","doi":"10.1109/NANO.2010.5697772","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697772","url":null,"abstract":"Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron Held emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/µm at the electron field emission current density of 10µA/cm2. Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134599575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Organic/inorganic hybrid gate dielectric for high-performance and low-power organic thin-film transistors 用于高性能和低功耗有机薄膜晶体管的有机/无机杂化栅极电介质
10th IEEE International Conference on Nanotechnology Pub Date : 2010-08-01 DOI: 10.1109/NANO.2010.5697845
W. Shin, Hanul Moon, S. Yoo, B. Cho
{"title":"Organic/inorganic hybrid gate dielectric for high-performance and low-power organic thin-film transistors","authors":"W. Shin, Hanul Moon, S. Yoo, B. Cho","doi":"10.1109/NANO.2010.5697845","DOIUrl":"https://doi.org/10.1109/NANO.2010.5697845","url":null,"abstract":"High-performance and low-voltage OTFTs have been demonstrated by employing a multilayer dielectric structure where ultrathin PVP (8 nm) is coated on (op of high-κ HfLaO (20 nm). The multilayer dielectric exhibited a low leakage current density of 4.6×10<sup>−8</sup> A/cm<sup>2</sup> at −3 V while maintaining a high capacitance density of 340 nF/cm<sup>2</sup>. The device with the multilayer dielectric showed superior performance as compared to that of the device with single HfLaO (20 nm) dielectric such as a low threshold voltage (V<inf>T</inf>) of 0.5 V, a low subthreshold slope (SS) of 0.09 V/decade, a high on-off current ratio (I<inf>on</inf>/I<inf>off</inf>) of 5×10<sup>5</sup> and a saturation mobility (μ<inf>SAT</inf>) of 0.34 cm<sup>2</sup>V<sup>×1</sup>s<sup>−1</sup> along with a low operating voltage of −2 V. Due to the enhanced μ<inf>SAT</inf> with the high gate capacitance of the device with multilayer dielectric, we also achieved a high μ<inf>SAT</inf>C<inf>ox</inf> of 114 nF/Vs, thereby leading to superior drain current drivability.","PeriodicalId":254587,"journal":{"name":"10th IEEE International Conference on Nanotechnology","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114314993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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