GaN nanowires as electron field emitters

Abstract

Gallium nitride (GaN) nanowires were synthesized by thermal chemical vapor deposition and characterized for applications as electron Held emitters. Semiconductive GaN provides a self-current-limiting function to help reduce the possibility for individual GaN nanowires to be overloaded by high electron emission current which might cause damages to the nanowires. Field emission measurements of GaN nanowires show a turn-on electric field of 4.47V/µm at the electron field emission current density of 10µA/cm2. Crystalline quality and low electron affinity of GaN nanowires contribute to the measured electron field emission characteristics.