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2008 IEEE Radio Frequency Integrated Circuits Symposium最新文献

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(Invited) An Ultra-Low Insertion Loss T/R switch fully integrated with 802.11b/g/n transceiver in 90nm CMOS (特邀)超低插入损耗收发开关与802.11b/g/n收发器在90nm CMOS完全集成
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561443
A. Kidwai, C. Fu, R. Sadhwani, D. Chu Chi, J. Jensen, S. Taylor
{"title":"(Invited) An Ultra-Low Insertion Loss T/R switch fully integrated with 802.11b/g/n transceiver in 90nm CMOS","authors":"A. Kidwai, C. Fu, R. Sadhwani, D. Chu Chi, J. Jensen, S. Taylor","doi":"10.1109/RFIC.2008.4561443","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561443","url":null,"abstract":"An Ultra Low Insertion loss T/R switch fully integrated with 802.11 b/g/n direct conversion transceiver front end in 90 nm CMOS. The receiver achieves 3.6 dB NF at 2.4 GHz. The T/R switch has been designed and tested and has 0.3 dB insertion loss in the transmit mode and adds 0.1 dB of NF in the receive mode while occupying 0.02 mm2 of the die area.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132954625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology 基于玻璃上硅技术的低失真、低损耗变容移相器
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561412
S. Kim, J. Qureshi, K. Buisman, L. Larson, L. D. de Vreede
{"title":"A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology","authors":"S. Kim, J. Qureshi, K. Buisman, L. Larson, L. D. de Vreede","doi":"10.1109/RFIC.2008.4561412","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561412","url":null,"abstract":"A varactor-tuned continuously variable phase shifter based on an all-pass network is presented. Design equations for this phase shifter network are derived and presented. The phase shifter achieves an IIP3 of 52 dBm with 10 MHz tone-spacing at 2 GHz and loss of 2.3-3.7 dB with continuous 180deg phase shift at 2 GHz. The total chip size including pads is 2900 mum X 2200 mum.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131915015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 6–9GHz WiMedia UWB RF transmitter in 90nm CMOS 90nm CMOS的6-9GHz WiMedia UWB RF发射机
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561381
Zisan Zhang, K. Mertens, M. Tiebout, S. Ek, S. Marsili, D. Matveev, C. Sandner, Infineon
{"title":"A 6–9GHz WiMedia UWB RF transmitter in 90nm CMOS","authors":"Zisan Zhang, K. Mertens, M. Tiebout, S. Ek, S. Marsili, D. Matveev, C. Sandner, Infineon","doi":"10.1109/RFIC.2008.4561381","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561381","url":null,"abstract":"A 6-9 GHz RF transmitter fabricated in a standard digital 90 nm CMOS technology and targeted for WiMedia UWB bandgroup 3 and 6 is presented. The transmitter features high linearity, low spurious emission, low power and small chip area. Measured data show - 5.7dBm output power, -1.4- dBm OIP3, -47 dBc LO leakage and -33.8 dBc sideband rejection with only 72 mW from a 1.2 V power supply at a minimal chip area of 0.24 mm2 active area.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125785712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Scalable statistical measurement and estimation of a mmWave CML static divider sensitivity in 65nm SOI CMOS 65nm SOI CMOS毫米波CML静态分频器灵敏度的可扩展统计测量和估计
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561515
D.D. Kim, Choongyeun Cho, Jonghae Kim
{"title":"Scalable statistical measurement and estimation of a mmWave CML static divider sensitivity in 65nm SOI CMOS","authors":"D.D. Kim, Choongyeun Cho, Jonghae Kim","doi":"10.1109/RFIC.2008.4561515","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561515","url":null,"abstract":"A CML static divider operates up to 82.4 GHz with 90% yield for 0 dBm input is statistically measured and estimated. The proposed method of statistical measurement enables reliable sensitivity curve estimation by 55% of standard variation, based on the analytic model, simulations, and scalable DC and RF measurements for the first time. A 300 mm full wafer is scanned for the validation.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115384218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A high dynamic range multi-standard CMOS mixer for GSM, UMTS and IEEE802.11b-g-a applications 用于GSM, UMTS和IEEE802.11b-g-a应用的高动态范围多标准CMOS混频器
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561416
M. B. Vahidfar, O. Shoaei, F. Svelto
{"title":"A high dynamic range multi-standard CMOS mixer for GSM, UMTS and IEEE802.11b-g-a applications","authors":"M. B. Vahidfar, O. Shoaei, F. Svelto","doi":"10.1109/RFIC.2008.4561416","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561416","url":null,"abstract":"Software defined radios are a topic of intense research and constitute one key industry need for future generation wireless products. In this paper, we investigate the down-conversion mixer, a particularly challenging block, due to the stringent dynamic range requirements set by cellphone applications and the wide operation bandwidth. The proposed mixer is based on a Gilbert cell and operates between 900 MHz and 6 GHz. The parasitic capacitor of the switching pair, main responsible for the limited dynamic range, is tuned out by means of a spiral inductor at 900 MHz, a transformer based programmable inductor between 1.7 GHz and 2.4 GHz, and a small spiral in the 5 GHz-6 GHz range. Prototypes have been integrated in a 65 nm CMOS technology and are operated from a 1.2 V supply. Minimum IIP2 and maximum average noise are 65 dBm and 5.4 nV/sqrt (Hz) in DCS. The mixer current consumption is 7.5 mA.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":" 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113949999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A new method of TX leakage cancelation in W/CDMA and GPS receivers 一种新的W/CDMA和GPS接收机的信号泄漏抵消方法
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561392
V. Aparin
{"title":"A new method of TX leakage cancelation in W/CDMA and GPS receivers","authors":"V. Aparin","doi":"10.1109/RFIC.2008.4561392","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561392","url":null,"abstract":"The theory and practical implementation of a novel TX cancelation method in CDMA and GPS receivers are described. The method is similar to the continuous-time LMS algorithm, but uses the TX LO as the reference signal and low-pass filters instead of the integrators. The method was implemented as part of a 0.18 mum CMOS cellular-band receiver to cancel the TX leakage at the LNA input. The measured maximum rejection of the TX leakage is approximately 20 dB, the LNA NF is 1.8 dB, and the dc current consumption of the TX canceler is 4 mA.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130292830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
A 27dBm, SiGe-BiCMOS transmitter with 62% PAE and operation class control for large-bandwidth polar modulation and pulse-width modulated signals 一个27dBm, SiGe-BiCMOS发射机，具有62%的PAE和操作级控制，用于大带宽极性调制和脉宽调制信号
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561488
M. Sanduleanu, R.P. Aditham
{"title":"A 27dBm, SiGe-BiCMOS transmitter with 62% PAE and operation class control for large-bandwidth polar modulation and pulse-width modulated signals","authors":"M. Sanduleanu, R.P. Aditham","doi":"10.1109/RFIC.2008.4561488","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561488","url":null,"abstract":"This paper presents a SiGe BiCMOS transmitter for large bandwidth Polar Modulation and PWM signals. For flexibility, the transmitter presented in the paper has an externally controllable class of operation. Fabricated in a SiGe BiCMOS process (QUBIC4G), the measured saturated output power of the transmitter is 27 dBm and the measured PAE is 62%. It features an IMD3 of -30 dBc up to 25 dBm peak envelope power and fulfills the spectral mask for WLAN 802.11.a signals.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130701824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 2.5mW inductorless wideband VGA with dual feedback DC-offset correction in 90nm CMOS technology 采用90nm CMOS技术的2.5mW无电感宽带VGA双反馈直流偏置校正
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561393
Yanjie Wang, B. Afshar, T. Cheng, V. Gaudet, A. Niknejad
{"title":"A 2.5mW inductorless wideband VGA with dual feedback DC-offset correction in 90nm CMOS technology","authors":"Yanjie Wang, B. Afshar, T. Cheng, V. Gaudet, A. Niknejad","doi":"10.1109/RFIC.2008.4561393","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561393","url":null,"abstract":"A low power inductorless wideband variable gain control amplifier (VGA) for baseband receivers has been designed in a standard digital 90 nm CMOS technology. The VGA was implemented using four-stage modified Cherry-Hooper amplifier with a dual feedback DC-offset canceling network, which simultaneously corrects DC offsets and extends bandwidth without a peaking inductor resulting in saving the chip space significantly. The proposed VGA has been measured using on-chip probing and achieves a 3-dB bandwidth of more than 2.2 GHz with 60 dB gain tuning range. It consumes 2.5 mW through a 1V supply (excluding the output buffer), and occupies only 0.01 mm2 active area.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130800383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 56
5–6 GHz SPDT switchable balun using CMOS transistors 使用CMOS晶体管的5-6 GHz SPDT可切换平衡
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561445
Byung-Wook Min, Gabriel M. Rebeiz
{"title":"5–6 GHz SPDT switchable balun using CMOS transistors","authors":"Byung-Wook Min, Gabriel M. Rebeiz","doi":"10.1109/RFIC.2008.4561445","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561445","url":null,"abstract":"This paper presents a new design and implementation of a CMOS single-pole-double-throw (SPDT) switch integrated within a transformer balun. The top two metal layers of a CMOS process are used for the primary and secondary inductors of the transformer. The secondary inductor is symmetrically wound, and the CMOS transistors are placed at the center-taps for the switching operation. The transformer is doubly tuned using the transistor parasitic capacitances and an integrated capacitor to overcome the limited coupling factor (k=0.76). The measured insertion loss of the switchable balun is 1.6-1.7 dB at 5-6 GHz for both ports with excellent input and output match, and the input 1-dB power compression point is 12 dBm. The integrated switchable balun occupies 250times240 mum2, and can be used for compact low-power T/R applications with a single-ended antenna and differential low-noise and transmit amplifiers. To our knowledge, this is the first implementation of a switchable transformer balun.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121895184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A fully integrated tri-band, MIMO transceiver RFIC for 802.16e 一个完全集成的三频段，MIMO收发器的802.16e RFIC
2008 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2008-07-15 DOI: 10.1109/RFIC.2008.4561398
F. Beaudoin, T. Zortea, G. Deliyannides, M. Hiebert, M. McAdam, M. Venditti, V. Choudary, B. Guay, H. Djahanshahi, T. McKeen, A. Hafez
{"title":"A fully integrated tri-band, MIMO transceiver RFIC for 802.16e","authors":"F. Beaudoin, T. Zortea, G. Deliyannides, M. Hiebert, M. McAdam, M. Venditti, V. Choudary, B. Guay, H. Djahanshahi, T. McKeen, A. Hafez","doi":"10.1109/RFIC.2008.4561398","DOIUrl":"https://doi.org/10.1109/RFIC.2008.4561398","url":null,"abstract":"A 0.18-mum CMOS tri-band MIMO transceiver for fixed and mobile WiMAX applications is presented. The transceiver supports operation in the 2.3-2.7 GHz, 3.3-3.8 GHz, or 4.9-5.95 GHz bands. A novel DC-offset removal scheme is used to enable a low-cost direct-conversion architecture. The transmitter exhibits an EVM of -38 dB, -36 dB, and -33 dB @ 0 dBm output power for the 2G, 3G, and 5G bands respectively. In full MIMO operation at 3.5 GHz, the TX dissipates 402 mW and 450 mW in RX mode.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122237271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
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