Zisan Zhang, K. Mertens, M. Tiebout, S. Ek, S. Marsili, D. Matveev, C. Sandner, Infineon
{"title":"90nm CMOS的6-9GHz WiMedia UWB RF发射机","authors":"Zisan Zhang, K. Mertens, M. Tiebout, S. Ek, S. Marsili, D. Matveev, C. Sandner, Infineon","doi":"10.1109/RFIC.2008.4561381","DOIUrl":null,"url":null,"abstract":"A 6-9 GHz RF transmitter fabricated in a standard digital 90 nm CMOS technology and targeted for WiMedia UWB bandgroup 3 and 6 is presented. The transmitter features high linearity, low spurious emission, low power and small chip area. Measured data show - 5.7dBm output power, -1.4- dBm OIP3, -47 dBc LO leakage and -33.8 dBc sideband rejection with only 72 mW from a 1.2 V power supply at a minimal chip area of 0.24 mm2 active area.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 6–9GHz WiMedia UWB RF transmitter in 90nm CMOS\",\"authors\":\"Zisan Zhang, K. Mertens, M. Tiebout, S. Ek, S. Marsili, D. Matveev, C. Sandner, Infineon\",\"doi\":\"10.1109/RFIC.2008.4561381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 6-9 GHz RF transmitter fabricated in a standard digital 90 nm CMOS technology and targeted for WiMedia UWB bandgroup 3 and 6 is presented. The transmitter features high linearity, low spurious emission, low power and small chip area. Measured data show - 5.7dBm output power, -1.4- dBm OIP3, -47 dBc LO leakage and -33.8 dBc sideband rejection with only 72 mW from a 1.2 V power supply at a minimal chip area of 0.24 mm2 active area.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 6-9 GHz RF transmitter fabricated in a standard digital 90 nm CMOS technology and targeted for WiMedia UWB bandgroup 3 and 6 is presented. The transmitter features high linearity, low spurious emission, low power and small chip area. Measured data show - 5.7dBm output power, -1.4- dBm OIP3, -47 dBc LO leakage and -33.8 dBc sideband rejection with only 72 mW from a 1.2 V power supply at a minimal chip area of 0.24 mm2 active area.