A 6–9GHz WiMedia UWB RF transmitter in 90nm CMOS

Zisan Zhang, K. Mertens, M. Tiebout, S. Ek, S. Marsili, D. Matveev, C. Sandner, Infineon
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引用次数: 7

Abstract

A 6-9 GHz RF transmitter fabricated in a standard digital 90 nm CMOS technology and targeted for WiMedia UWB bandgroup 3 and 6 is presented. The transmitter features high linearity, low spurious emission, low power and small chip area. Measured data show - 5.7dBm output power, -1.4- dBm OIP3, -47 dBc LO leakage and -33.8 dBc sideband rejection with only 72 mW from a 1.2 V power supply at a minimal chip area of 0.24 mm2 active area.
90nm CMOS的6-9GHz WiMedia UWB RF发射机
提出了一种采用标准数字90纳米CMOS技术制造的6-9 GHz射频发射机,用于WiMedia UWB波段组3和6。该发射机具有线性度高、杂散发射小、功耗低、芯片面积小等特点。测量数据显示,在1.2 V电源下,在最小芯片面积0.24 mm2的有源面积下,输出功率为- 5.7dBm, OIP3为-1.4 dBm, LO漏量为-47 dBc,边带抑制为-33.8 dBc,仅为72 mW。
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