International Conferencre on Simulation of Semiconductor Processes and Devices最新文献_第5页

On the large-signal CMOS modeling and parameter extraction for RF applications 射频应用中的大信号CMOS建模与参数提取

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034518

M. Je, I. Kwon, Jeonghu Han, Hyungcheol Shin, Kwyro Lee

引用次数: 11

Simulation of DGSOI MOSFETs with a Schrodinger-Poisson based mobility model 基于薛定谔-泊松迁移率模型的DGSOI mosfet模拟

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034507

A. Schenk, A. Wettstein

引用次数: 8

2D simulation of a buried-heterostructure tunable twin-guide DFB laser diode 埋藏异质结构可调谐双波导DFB激光二极管的二维仿真

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034515

L. Schneider, T. Witzig, W. Streiff, W. Pfeiffer, T. Bregy, T. Schmidt, W. Fichtner

引用次数: 0

A strategy for enabling predictive TCAD in development of sub-100nm CMOS technologies 在亚100nm CMOS技术开发中实现预测性TCAD的策略

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034510

C. Machala, S. Chakravarthi, D. Li, S. Yang, C. Bowen

引用次数: 1

Analysis of injection current with electron temperature for high-K gate stacks 高钾栅极堆注入电流随电子温度的变化分析

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034563

Y. Ohkura, H. Takashino, S. Wakahara, K. Nishi

引用次数: 1

The physical phenomena responsible for excess noise in short-channel MOS devices

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034520

R. Navid, R. Dutton

引用次数: 26

Simulation of substrate currents 衬底电流模拟

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034521

W. Schoenmaker, P. Meuris, W. Magnus, B. Maleszka

引用次数: 5

Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET 非对称高压mosfet直流和交流精确仿真的偏置相关漂移电阻建模

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034552

N. Hefyene, E. Vestiel, Benoit Bakeroot, C. Anghel, S. Frere, Adrian M. Ionescu, Renaud Gillon

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引用次数: 28

Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-Equilibrium Greens Function calibration 使用密度梯度形式的直接源-漏隧道模拟:非平衡格林函数校准

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034569

J. Watling, A. Brown, A. Asenov, A. Svizhenko, M. Anantram

引用次数: 21

Technology modeling for emerging SOI devices 新兴SOI设备的技术建模

International Conferencre on Simulation of Semiconductor Processes and Devices Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034558

M. Ieong, P. Oldiges

引用次数: 8