16 January最新文献

{"title":"Plasma Stimulated Impurity Redistribution in Silicon","authors":"S. Koveshnikov, E. Yakimov, N. Yarykin, V. Yunkin","doi":"10.1002/PSSA.2211110108","DOIUrl":"https://doi.org/10.1002/PSSA.2211110108","url":null,"abstract":"The influence of low temperature (≈100 °C) plasma treatment on the properties of silicon near surface layers is studied. A decrease in concentration of deep level centres as well as the formation of the new vacancy related complexes at a depth of 1 to 10 μm are observed. The changes in the silicon properties are found to be connected closely with the generation of intrinsic point defects. Experimental data confirming the possibility of enhanced gold diffusion are presented and the value of the diffusion coefficient is estimated. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":240242,"journal":{"name":"16 January","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126725745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stability of Sm Centers in Electroluminescent ZnS:SmF3 MISIM Structures during Ageing","authors":"K. Löbe, R. Boyn, R. Reetz","doi":"10.1002/PSSA.2211110168","DOIUrl":"https://doi.org/10.1002/PSSA.2211110168","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114756858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of Eshelby Concept in the Solution of Boundary Problems for Elastic Solids with Defects","authors":"A. Vladimirov, E. Moos","doi":"10.1002/PSSA.2211110110","DOIUrl":"https://doi.org/10.1002/PSSA.2211110110","url":null,"abstract":"A theoretical research of the elastic fields of defects lying near the free and interface boundaries is carried out. The Somigliana surface dislocation method is developed as the general view point of using the surface continuum distributions of dislocations solving the boundary problem of the theory of defects. New solutions of the boundary problem are obtained for a halfspace and a plate, and also for sandwich-like systems by means of double surface dislocations. The correlation between the Somigliana vectors and the surface relief is determined. Methods of calculating the self and interaction energy of defects in a halfspace are elaborated. \u0000 \u0000 \u0000 \u0000Eine theoretische Untersuchung der elastischen Felder der an freien Grenzen und an Zwischenphasengrenzen liegenden Defekte wird durchgefuhrt. Die Methode der Somiglianschen Oberflachenversetzung wird als verallgemeinerter Gesichtspunkt zur Ausnutzung der kontinuierlichen Oberflachenversetzungsverteilungen bei der Losung des Grenzwertproblems der Defekttheorie entwickelt. Neue Losungen des Grenzenproblems werden fur einen Halbraum und fur eine Platte sowie fur Sandwichsysteme mit Hilfe von Doppeloberflachenversetzungen gewonnen. Dabei wird ein Zusammenhang zwischen den Somiglianschen Vektoren und dem Oberflachenrelief festgestellt. Eine Methodik zur Berechnung der Eigenenergie und der Wechselwirkungsenergie der Defekte in einem Halbraum wird ausgearbeitet.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123942212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation Induced Sensitization in Polyethylene","authors":"P. Muthal, S. Moharil, B. T. Deshmukh","doi":"10.1002/PSSA.2211110166","DOIUrl":"https://doi.org/10.1002/PSSA.2211110166","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116592133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Argon Irradiation of Sn Thin Layers Deposited on Fe Substrates","authors":"R. Pasianot, G. Galambos, E. Savino, L. Amaral, M. Behar, D. Farkas, S. Rao","doi":"10.1002/PSSA.2211110118","DOIUrl":"https://doi.org/10.1002/PSSA.2211110118","url":null,"abstract":"Iron polycrystals deposited with thin films of Sn (100 nm approximately) are irradiated with 300 and 400 keV argon ions at the temperatures of liquid hydrogen, room, and 180 °C. After irradiation, the specimens are examined using optical and scanning microscopy, X-ray microprobe, X-ray diffraction, and He-Rutherford back scattering. The surface structures obtained by irradiation at different temperatures are compared with those resulting from isothermal treatments. It is concluded that at liquid hydrogen temperature the major effect of the irradiation is a large and inhomogeneous, localized sputtering of Sn. Also sputtering dominates at room temperature, although it appears to be homogeneous. Finally at 180 °C, Sn islands and FeSn, FeSn2 crystals develop at the Fe surface. FeSnx precipitates form between 300 to 400 °C when the SnFe bilayer is annealed. Light particle irradiation seems to be effective in reducing thermodynamic barriers for nucleation of the above mentioned precipitates at the FeSn interface. \u0000 \u0000 \u0000 \u0000Auf Eisenpolykristalle aufgebrachte dunne Sn-Schichten (etwa 100 nm) werden mit 300 und 400 keV-Argon-Ionen bei Temperaturen des flussigen Wasserstoff, Raumtemperatur und 180 °C bestrahlt. Nach der Bestrahlung werden die Proben mittels optischer und Rastermikroskopie, Rontgenmikrosonde, Rontgenbeugung und He-Rutherfordruckstreuung untersucht. Die bei der Bestrahlung unter unterschiedlicher Temperatur erhaltenen Oberflachenstrukturen werden mit den nach isothermischer Temperung erhaltenen verglichen. Es wird angenommen, das bei der Temperatur des flussigen Wasserstoff der Haupteffekt der Bestrahlung eine grose und inhomogene lokalisierte Abstaubung von Sn ist. Zerstaubung dominiert auch bei Zimmertemperatur, obgleich es homogen zu sein scheint. Schlieslich entwickeln sich bei 180 °C, Sn-Inseln und FeSn- und FeSn2-Kristalle. FeSnx-Prazipitate bilden sich zwischen 300 und 400 °C, wenn die SnFe-Doppelschicht ausgeheilt wird. Bestrahlung mit leichten Teilchen scheint bei der Reduzierung thermodynamischer Barrieren fur die Keimbildung der oben erwahnten Prazipitate an der FeSn-Grenzflache effektiv zu sein.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"102 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120983073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Change of the Optical Properties of CdS Single Crystals upon High Dose Indium and Gallium Implantation","authors":"A. Georgobiani, A. Gruzintsev, A. Spitsyn, I. Tiginyanu","doi":"10.1002/PSSA.2211110132","DOIUrl":"https://doi.org/10.1002/PSSA.2211110132","url":null,"abstract":"Results of a complex study of photoluminescence, cathodoluminescence, and reflection spectra of CdS single crystals irradiated with indium and gallium ions at doses of 1015 and 1016 cm−2 are presented. It is shown, that after annealing of the CdS: In+ and CdS: Ga+ samples at low temperatures the spectral characteristics of the implanted side are similar to the spectra of CdIn2S4 and CdGa2S4 compounds, respectively. The influence of annealing on the properties of the crystals is investigated. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":240242,"journal":{"name":"16 January","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127470695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Grain Boundary Microdamage Due to Visco-Elastic Relaxation of Residual Stresses in Alumina Ceramics","authors":"A. Krell, W. Pompe","doi":"10.1002/PSSA.2211110111","DOIUrl":"https://doi.org/10.1002/PSSA.2211110111","url":null,"abstract":"Grain boundary strengths are estimated experimentally for various Al2O3 structures. It turns out that grain boundary strength at room temperature is strongly affected by viscose relaxation processes proceeding during cooling the sintered structures. The results are used to discuss associated macroscopic mechanical properties of Al2O3 and Al2O3 + ZrO2 as the dependence of fracture strength on the sintering atmosphere, but also on testing atmosphere. \u0000 \u0000 \u0000 \u0000Fur unterschiedliche Al2O3-Gefuge wird experimentell die Korngrenzenfestigkeit bestimmt. Dabei zeigt sich, das die bei Raumtemperatur gemessene Korngrenzenfestigkeit stark von viskosen Relaxationsprozessen beeinflust wird, wie sie beim Abkuhlen der Sinterwerkstoffe auftreten. Diese Ergebnisse werden genatzt, um das makroskopische mechanische Verhalten von Al2O3 und Al2O3 + ZrO2 in seiner Abhangigkeit von der Sinteratmosphare und den Prufbedingungen zu diskutieren.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114272099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Semiconducting and Thermoelectric Properties of Sintered Iron Disilicide","authors":"T. Kojima","doi":"10.1002/PSSA.2211110124","DOIUrl":"https://doi.org/10.1002/PSSA.2211110124","url":null,"abstract":"The electrical resistivity, thermoelectric power, and Hall coefficient of sintered iron disilicide, Fe1−xMnxxSi2, and Fe1−yCoySi2 are measured over the temperature range from 77 to 1400 K. Regardless of the purity of raw materials, Fe1−xMnxSi2 and Fe1−yCoySi2 show semiconducting properties below the semiconductor-to-metal transition temperature Tc. Min and Co atoms in iron disilicide act as acceptor and donor, respectively. The energy gap of FeSi2 at 0 K is 1.00 eV, deduced from the temperature dependence of the Hall coefficient in the intrinsic region. The energy gap of Mn-doped FeSi2 decreases from 0.95 to 0.83 eV with increasing Mn amount. Above 150 K the lg ϱ versus 1/T dependence of Mn-doped FeSi2, exhibits an S-like decaying curve. This cannot be explained completely by ordinary band conduction, but can be done by small polaron conduction with crystalline distortions. \u0000 \u0000 \u0000 \u0000An den gesinterten Eisendisiliziden Fe1-xMnxSi2 und Fe1−yCoySi2 werden spezifischer Widerstand, Thermospannung und Hallkoeffizient im Temperaturbereich zwischen 77 und 1400 K gemessen. Unabhangig von der Reinheit der Ausgangsmaterialien zeigen Fe1−xMnxSi2 und Fe1−yCoySi2 unterhalb der Temperatur Tc beim Halbleiter-Metall-Ubergang halbleitende Eigenschaften. Mn-bzw. Co-Atome im Eisendisilizid wirken als Akzeptor bzw. Donator. Die Energielucke von FeSi2 betragt bei 0 K 1,00 eV, was aus der Temperaturabhangigkeit des Hallkoeffizienten im Eigenleitungsgebiet ermittelt wird. Die Energielucke von FeSi2 vermindert sich von 0,95 auf 0,83 eV mit der Zunahme der Mn-Dotierung. Oberhalb 150 K zeigt die 1/T-Abhangigkeit von lg ϱ einen S-formigen Verlauf. Dieses Verhalten des spezifischen Widerstandes ist im Rahmen des gewohnlichen Bandermodells schwer verstandlich, es kann jedoch durch kleine Polaronen und Kristalldeformationen gedeutet werden.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125726426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetoelastic Properties of Some Fe-Rich Fe-Co-Si-B Metallic Glasses","authors":"J. Gutiérrez, J. Barandiarán, O. Nielsen","doi":"10.1002/PSSA.2211110129","DOIUrl":"https://doi.org/10.1002/PSSA.2211110129","url":null,"abstract":"Magnetoelastic measurements are performed in metallic glasses of composition (Fe0.79Co0.21)75+x. Si15−1.4xB10+0.4x (x = 0, 2, 4, 6, 8, 10) by means of the resonance-antiresonance method. High values of k (magnetoelastic coupling coefficient) and of the ΔY effect are observed in some compositions, reaching 0.7 for k and 50% for ΔY in the as-quenched state. Annealing treatments further improve these values. \u0000 \u0000 \u0000 \u0000An amorphen Metallen der Zusammensetzung (Fe0,79Co0,21)75+x Si15−1.4xB10+0.4x (x = 0, 2, 4, 6, 8, 10) werden die magnetoelastischen Grosen unter Verwendung der Resonanz-Antiresonanz-methode bestimmt. Hohe Werte von k (der magnetoelastische Koeffizient) sowie vom ΔY-Effekt werden fur einige der Legierungen gefunden, mit Werten bis zu 0,7 fur k und 50% fur ΔY im abgeschreckten Zustand. Noch hohere Werte werden durch Ausgluhen erreicht.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130583666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Low-Temperature Epitaxial Regrowth of Ion-Implanted Amorphous GaAs","authors":"J. Herold, H. Bartsch, W. Wesch, G. Götz","doi":"10.1002/PSSA.2211110106","DOIUrl":"https://doi.org/10.1002/PSSA.2211110106","url":null,"abstract":"A detailed description of optical reflectivity technique for monitoring laser-induced solid phase epitaxial regrowth in real time is given. An example illustrates the use of this technique for the investigation of interface structures. By cooling the sample the epitaxial regrowth of the crystalline/amorphous interface is stopped before the interface reaches the surface. These stages are additionally investigated by TEM- and RBS-studies which illustrate the dependence of the crystalline quality on the regrowth process. \u0000 \u0000 \u0000 \u0000Es wird eine genaue Beschreibung der optischen Echtzeitreflexionstechnik zur Aufzeichnung von laserinduzierter Festphasenepitaxie gegeben. Die Anwendung dieser Methode zur Untersuchung der Struktur der Phasengrenze wird an einem Beispiel gezeigt. Bevor die kristallin/amorphe Phasengrenze die Oberflache erreicht, wird die Epitaxie durch Kuhlung gestoppt. Diese Zustande werden zusatzlich durch TEM- und RBS-Messungen untersucht. Sie zeigen die Kristallqualitat in Abhangigkeit vom Wachstumsprozes.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115936897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}