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Approximate Calculation of the Switching Voltage of MISS MISS开关电压的近似计算
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110140
I. Zolomy
{"title":"Approximate Calculation of the Switching Voltage of MISS","authors":"I. Zolomy","doi":"10.1002/PSSA.2211110140","DOIUrl":"https://doi.org/10.1002/PSSA.2211110140","url":null,"abstract":"The dependence of the threshold voltage of MISS upon the doping concentration of the epilayer is discussed based upon a thyristor analogy. The threshold voltage reaches a maximum value at medium doping concentrations. At low doping concentrations the threshold voltage is limited by the punch-through voltage, at high doping concentrations by the breakdown voltage. At low doping concentrations the threshold voltage is very sensitive to the current amplification of the tunnel MIS part of the device and to two-dimensional effects. \u0000 \u0000 \u0000 \u0000Es wird die Abhangigkeit der Kippspannung von der Dotierungskonzentration mit Hilfe der Thyristoranalogie diskutiert. Die Kippspannung erreicht einen maximalen Wert bei mittleren Konzentrationen. Bei niedrigen Konzentrationen wird die Kippspannung von der Punch-Through-Spannung, bei hoheren Konzentrationen von der Durchbruchspannung begrenzt. Bei niedrigen Konzentrationen ist die Kippspannung sehr empfindlich gegen die Stromverstarkung der Tunnel-MIS Diode und zweidimensionale Effekte.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115020521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Annealing Temperature Dependence of the l/f Noise in Si-Implanted GaAs si注入GaAs中l/f噪声的退火温度依赖性
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110153
J. Gong, S. H. Yang
{"title":"Annealing Temperature Dependence of the l/f Noise in Si-Implanted GaAs","authors":"J. Gong, S. H. Yang","doi":"10.1002/PSSA.2211110153","DOIUrl":"https://doi.org/10.1002/PSSA.2211110153","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133421143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diffusion from a Gaussian Half-Profile at an Absorbing Boundary in the Presence of an Electric Field 电场作用下吸收边界处高斯半轮廓的扩散
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110144
H. Kahnt, T. Possner
{"title":"Diffusion from a Gaussian Half-Profile at an Absorbing Boundary in the Presence of an Electric Field","authors":"H. Kahnt, T. Possner","doi":"10.1002/PSSA.2211110144","DOIUrl":"https://doi.org/10.1002/PSSA.2211110144","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116353275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electrodeposition of Thin Film Semiconductors 薄膜半导体的电沉积
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110102
C. Lokhande, S. Pawar
{"title":"Electrodeposition of Thin Film Semiconductors","authors":"C. Lokhande, S. Pawar","doi":"10.1002/PSSA.2211110102","DOIUrl":"https://doi.org/10.1002/PSSA.2211110102","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"240 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133755847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 84
Schottky Barrier Height Modification on n-Type Silicon by Wet Chemical Etching 湿化学蚀刻法修饰n型硅的肖特基势垒高度
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110149
G. Adegboyega
{"title":"Schottky Barrier Height Modification on n-Type Silicon by Wet Chemical Etching","authors":"G. Adegboyega","doi":"10.1002/PSSA.2211110149","DOIUrl":"https://doi.org/10.1002/PSSA.2211110149","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"234 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133775130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Distribution of Traps in ZnSe:Cu Crystals Obtained by the Fractional Glow Technique 分数辉光技术获得的ZnSe:Cu晶体中的陷阱分布
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110165
F. Firszt, H. Oczkowski
{"title":"Distribution of Traps in ZnSe:Cu Crystals Obtained by the Fractional Glow Technique","authors":"F. Firszt, H. Oczkowski","doi":"10.1002/PSSA.2211110165","DOIUrl":"https://doi.org/10.1002/PSSA.2211110165","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116114207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Anomalous Electrical Resistance of Y-Ba-Cu-O System Ceramics Y-Ba-Cu-O系陶瓷的异常电阻
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110160
B. B. Boiko, A. Akimov, V. Gatalskaya, S. Demyanov, L. Kurochkin, M. Petrovskii, E. K. Stribuk, V. M. Finskaya
{"title":"Anomalous Electrical Resistance of Y-Ba-Cu-O System Ceramics","authors":"B. B. Boiko, A. Akimov, V. Gatalskaya, S. Demyanov, L. Kurochkin, M. Petrovskii, E. K. Stribuk, V. M. Finskaya","doi":"10.1002/PSSA.2211110160","DOIUrl":"https://doi.org/10.1002/PSSA.2211110160","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124821281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase Transition in (CH3NH3)3Bi2Cl9 (CH3NH3)3Bi2Cl9的相变
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110148
R. Jakubas, P. Tomaszewski, L. Sobczyk
{"title":"Phase Transition in (CH3NH3)3Bi2Cl9","authors":"R. Jakubas, P. Tomaszewski, L. Sobczyk","doi":"10.1002/PSSA.2211110148","DOIUrl":"https://doi.org/10.1002/PSSA.2211110148","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129585213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Magnetic Susceptibility and Electrophysical Properties of SiTe Single Crystals SiTe单晶的磁化率和电物理性质
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110146
F. M. Kamarly, N. Guseinov, A. Yangirov
{"title":"Magnetic Susceptibility and Electrophysical Properties of SiTe Single Crystals","authors":"F. M. Kamarly, N. Guseinov, A. Yangirov","doi":"10.1002/PSSA.2211110146","DOIUrl":"https://doi.org/10.1002/PSSA.2211110146","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124239745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Ion Bombardment of Double-Layer Thin Zr/Ni Films 离子轰击Zr/Ni双层薄膜的研究
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110145
V. Goltsev, V. V. Khodasevich, G. Götz, I. Prikhodko, V. M. Drako, V. Uglov
{"title":"Study of Ion Bombardment of Double-Layer Thin Zr/Ni Films","authors":"V. Goltsev, V. V. Khodasevich, G. Götz, I. Prikhodko, V. M. Drako, V. Uglov","doi":"10.1002/PSSA.2211110145","DOIUrl":"https://doi.org/10.1002/PSSA.2211110145","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131300352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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