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Calculation of TEM Contrast of Small Coherent Precipitates 小相干相透射电镜对比计算
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110107
F. Haider
{"title":"Calculation of TEM Contrast of Small Coherent Precipitates","authors":"F. Haider","doi":"10.1002/PSSA.2211110107","DOIUrl":"https://doi.org/10.1002/PSSA.2211110107","url":null,"abstract":"A new simple method to compute the image contrast of small coherent precipitates without strain contrast is proposed. The method is based on a perturbational expansion of the extra scattering due to the precipitate. Two approaches are possible – z-dependent and z-independent perturbation theory, which each have special advantages. Application of both methods to suited alloy systems is demonstrated. \u0000 \u0000 \u0000 \u0000Eine einfache Methode zur Berechnung des elektronenmikroskopischen Bildkontrasts kleiner koharenter Ausscheidungen ohne Verzerrungskontrast wird vorgeschlagen. Das Verfahren beruht auf einer Storungsrechnung im Zusatzpotential der Ausscheidung. Es sind zwei Ansatze moglich – z-abhangige und z-unabhangige Storungsrechnung, wobei beide Verfahren spezifische Vorteile zeigen. Fur beide Verfahren wird die Anwendung auf geeignete Legierungssysteme gezeigt.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123368569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The Determination of Distributions of the Parameters of Thermally Stimulated Depolarization Current Peaks: Theory 热激退极化电流峰参数分布的确定:理论
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110135
C. Christodoulides, L. Apekis, P. Pissis, D. Daoukaki-diamanti
{"title":"The Determination of Distributions of the Parameters of Thermally Stimulated Depolarization Current Peaks: Theory","authors":"C. Christodoulides, L. Apekis, P. Pissis, D. Daoukaki-diamanti","doi":"10.1002/PSSA.2211110135","DOIUrl":"https://doi.org/10.1002/PSSA.2211110135","url":null,"abstract":"A method is described for determining the distributions of the values of activation energy or of the preexponential time constant for a peak of thermally stimulated depolarization current which is known not to be due to a single relaxation mechanism, but to a continuous distribution of either one of these two parameters. The peak is first transformed into a density function of the peak temperature. This may then be used to obtain the distributions of activation energy or preexponential time constant, or both, provided a relation connecting these two parameters can be found. The resolution and applicability of the method is discussed and theoretical examples are used as illustrations. \u0000 \u0000 \u0000 \u0000Es wird eine Methode zur Bestimmung der Verteilung von Werten der Aktivierungsenergie oder des Zeitvorfaktors fur einen Peak des thermisch stimulierten Depolarisationsstroms beschrieben, wenn bekannt ist, das er nicht von einem einfachen Relaxationsprozes herruhrt, sondern von einer kontinuierlichen Verteilung einer dieser beiden Parameter oder beider Parameter verursacht wird. Der Peak wird zunachst in eine Verteilungsfunktion der Peaktemperatur transformiert. Diese kann dazu verwendet werden, um die Verteilungen der Aktivierungsenergie oder des Zeitvorfaktors oder beider zu bekommen, unter der Voraussetzung, das eine Beziehung zwischen diesen beiden Parametern gefunden werden kann. Das Auflosungsvermogen und die Anwendbarkeit der Methode werden diskutiert und theoretische Beispiele zur Erlauterung verwendet.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122736307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Photocurrent Generation and Optical Transitions on Degenerate Cadmium Oxide Photoanodes 简并型氧化镉光阳极上的光电流产生和光跃迁
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110120
I. D. Makuta, S. Poznyak, A. Kulak, E. Streltsov
{"title":"Photocurrent Generation and Optical Transitions on Degenerate Cadmium Oxide Photoanodes","authors":"I. D. Makuta, S. Poznyak, A. Kulak, E. Streltsov","doi":"10.1002/PSSA.2211110120","DOIUrl":"https://doi.org/10.1002/PSSA.2211110120","url":null,"abstract":"Quantum efficiencies of photocurrent generation (i.e. quantum yields, Y) depending on the electrode potential (E) and irradiation wavelength (λ) are studied for polycrystalline degenerate cadmium oxide (CdO) with variable electron concentrations (ne). A depletion region (i.e. space charge layer) may be formed and considerable photocurrent (iph) may be generated (λ < 1200 nm) in the CdO/electrolyte solution system with appropriate anodic bias. The highest quantum yield (0.8 at λ = 450 nm) is attained in 0.2 M NaSCN at ne = (1 to 4) × 1019 cm−3. With electron concentration increasing to (0.9 to 1.6) × 1020 cm−3 it reduces to 0.1 under the same conditions. Here, the CdO energy gaps determined from Y spectra increase due to the Burstein shift from 0.90 eV to 1.10 eV for indirect and from 2.06 to 2.29 eV for direct transitions. \u0000 \u0000 \u0000 \u0000Die Quantenwirkungsgrade der Photostromgeneration (d. h. Quantenausbeuten, Y) in Abhangigkeit vom Elektrodenpotential (E) und Bestrahlungswellenlange (λ) werden fur polykristallines entartetes Kadmiumoxid (CdO) mit unterschiedlichen Elektronenkonzentrationen (ne) untersucht. Ein Verarmungsgebiet (d. h. Raumladungsschicht) kann sich bilden und ein betrachtlicher Photostrom (iph) (λ < 1200 nm) im CdO/Elektrolyt-System bei geeigneter Anodenvorspannung generiert werden. Die hochste Quantenausbeute (0,8 bei λ × 450 nm) wird in 0,2 M NaSCN bei ne = (1 bis 4) × 1019 cm−3 erhalten. Mit auf (0,9 bis 1,6) × 1020 cm−3 steigender Elektronenkonzentration reduziert sie sich auf 0,1 unter denselben Bedingungen. Hierbei vergrosern sich die CdO-Energielucken, die aus den Y-Spektren bestimmt werden, infolge der Bursteinverschiebung von 0,90 auf 1,10 eV fur indirekte und von 2,06 auf 2,29 eV fur direkte Ubergange.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125211725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Etude par diffraction de R-X de la densité de charge de valence dans les deux semi-conducteurs tétraédriques ZnSiAs2 et ZnGeAs2 用R-X衍射法研究了两种四面体半导体ZnSiAs2和ZnGeAs2的价电荷密度
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110122
M. Levalois, G. Allais
{"title":"Etude par diffraction de R-X de la densité de charge de valence dans les deux semi-conducteurs tétraédriques ZnSiAs2 et ZnGeAs2","authors":"M. Levalois, G. Allais","doi":"10.1002/PSSA.2211110122","DOIUrl":"https://doi.org/10.1002/PSSA.2211110122","url":null,"abstract":"La repartition des electrons de valence dans ZnSiAs2 et ZnGeAs2 est decrite a l'aide de charges de liaison gaussiennes, centrees sur les axes des liaisions. Les resultats obtenus permettent de retrouver la difference, constatee precedemment lors de l'etude des parametres structuraux, entre la liaison ZnAs et les liaisons SiAs ou GeAs, plus fortement covalentes. En outre, la densite de charge de valence ainsi decrite est tres voisine de celles qui resultent des calculs theoriques de structure de bandes. \u0000 \u0000 \u0000 \u0000Gaussian bond charge model is used to describe the valence charge density in ZnSiAs2 and ZnGeAs2. The main feature obtained is the significant difference, already pointed out in the structural parameters study, between the ZnAs bond and the SiAs or GeAs bonds, which are more strongly covalent. Besides, the valence charge density appears to be close to that obtained from band structure calculations.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116880230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Metal Influence on Switching MIM Diodes 金属对MIM二极管开关的影响
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110142
H. Pagnia, N. Sotnik
{"title":"Metal Influence on Switching MIM Diodes","authors":"H. Pagnia, N. Sotnik","doi":"10.1002/PSSA.2211110142","DOIUrl":"https://doi.org/10.1002/PSSA.2211110142","url":null,"abstract":"Post-deposition onto electroformed planar metal–insulator–metal diodes (displaying e.g. I–U characteristics with negative differential resistance due to rupturing filamentary current paths) was proved to cause an additional process, similar to basic electroforming, affecting the switching behaviour temporarily only. It cannot patch ruptured filaments. \u0000 \u0000 \u0000 \u0000Es wird gezeigt, das eine nachtragliche Beschichtung elektroformierter planarer Metall–Isolator–Metalldioden (die z. B. I–U-Charakteristiken mit negativ differentiellem Widerstand infolge des Reisens fadenformiger Strompfade zeigen) einen zusatzlichen Prozes verursacht, ahnlich der Grundelektroformierung, der das Schaltverhalten nur zeitlich beeinflust. Sie kann gerissene Faden nicht ausbessern.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123052570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Positron Annihilation Lifetime Study of Positive Temperature Coefficient BaTiO3 Samples 正温度系数BaTiO3样品正电子湮灭寿命研究
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110167
Ling Chen, Mingkang Teng, Guanghou Wang, Xiaoyun Li, Tianchang Lu
{"title":"Positron Annihilation Lifetime Study of Positive Temperature Coefficient BaTiO3 Samples","authors":"Ling Chen, Mingkang Teng, Guanghou Wang, Xiaoyun Li, Tianchang Lu","doi":"10.1002/PSSA.2211110167","DOIUrl":"https://doi.org/10.1002/PSSA.2211110167","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114352755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The Deep Levels in Nickel-Doped Silicon 镍掺杂硅的深层结构
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110152
M. Gong, Zhipu You
{"title":"The Deep Levels in Nickel-Doped Silicon","authors":"M. Gong, Zhipu You","doi":"10.1002/PSSA.2211110152","DOIUrl":"https://doi.org/10.1002/PSSA.2211110152","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128133311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Peculiarities of Physical Properties of Lead and Tin Selenide Solid Solutions 硒化铅锡固溶体物理性质的特殊性
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110162
V. I. Garasim, D. Zayachuk, R. Ivanchuk, V. B. Lototskii, P. M. Starik, V. Shenderovskii
{"title":"Peculiarities of Physical Properties of Lead and Tin Selenide Solid Solutions","authors":"V. I. Garasim, D. Zayachuk, R. Ivanchuk, V. B. Lototskii, P. M. Starik, V. Shenderovskii","doi":"10.1002/PSSA.2211110162","DOIUrl":"https://doi.org/10.1002/PSSA.2211110162","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"18 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125887311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Activation Parameters of Linear Heating Crystallisation in Ni70.3Fe4.7Si15B10 Glassy Alloy Determined Using the Internal Friction Method 内摩擦法测定Ni70.3Fe4.7Si15B10玻璃合金线加热结晶激活参数
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110113
M. Kłosek, J. W. Morón, T. Poloczek
{"title":"Activation Parameters of Linear Heating Crystallisation in Ni70.3Fe4.7Si15B10 Glassy Alloy Determined Using the Internal Friction Method","authors":"M. Kłosek, J. W. Morón, T. Poloczek","doi":"10.1002/PSSA.2211110113","DOIUrl":"https://doi.org/10.1002/PSSA.2211110113","url":null,"abstract":"Using the internal friction method the effective activation energy E of crystallisation during linear heating is determined for the glassy alloy Ni70.3Fe4.7Si15B10. E values are obtained: from the Kissinger formula 2.49 eV, from the Augis-Bennett formula 2.51 eV. It is shown that this agreement is not accidental. The pre-exponential factor in the Arrhenius law K0 is calculated for four alloys investigated in the literature by the IF method. Values obtained lay in a very wide interval 1014 to 1027 s−1. It is shown that In K0 increases approximately linearly with E. \u0000 \u0000 \u0000 \u0000Die effektive Aktivierungsenerigie E der Kristallisation wahrend linearer Erwarmung wird in amorphen Ni70,3Fe4,7Si15B10-Legierungen mit Hilfe der inneren Reibung untersucht. Fur E werden folgende Werte ermittelt: aus der Kissinger-Formel 2,49 eV, aus der Formel von Augis und Bennett 2,51 eV. Es wird gezeigt, das diese Ubereinstimmung nicht zufallig ist. Der praexponentielle Koeffizient K0 des Arrheniusgesetzes wird fur vier Legierungen, die in der Literatur mit der Methode der inneren Reibung untersucht wurden, berechnet. Die erhaltenen Werte liegen in einem sehr breiten Bereich, 1014 bis 1027 s−1. Es wird gezeigt, das ln K0 mit F fast linear ansteigt.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125200496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Plastic Instability during Combined Torsion-Tension Deformation in Al-0.72% Si Alloy Al-0.72% Si合金扭拉复合变形过程中的塑性失稳
16 January Pub Date : 1989-01-16 DOI: 10.1002/PSSA.2211110114
T. H. Youssef, F. Saadalah, I. K. Bishay
{"title":"Plastic Instability during Combined Torsion-Tension Deformation in Al-0.72% Si Alloy","authors":"T. H. Youssef, F. Saadalah, I. K. Bishay","doi":"10.1002/PSSA.2211110114","DOIUrl":"https://doi.org/10.1002/PSSA.2211110114","url":null,"abstract":"Pure tensile and combined torsion–tension deformation experiments are made using Al–0.72% Si samples of different grain diameters. Plastic instability behaviour is observed in the case of combined torsion–tension deformation. The onset and disappearance of this instability is found to depend on some parameters, as mode of deformation, applied axial tensile stress, working temperature, sample grain diameter, and quenched-in vacancies. \u0000 \u0000 \u0000 \u0000Reine Dehnungs- und kombinierte Torsions–Dehnungs-Deformationsexperimente werden an Al–0,72% Si-Proben verschiedenen Korndurchmessers durchgefuhrt. Es wird plastisches Instabilitatsverhalten im Fall der kombinierten Torsions–Dehnungsdeformation beobachtet. Es wird gefunden, das das Einsetzen und Verschwinden dieser Instabilitat von einigen Parametern, wie Deformationsmode, angelegter axialer Tensionsspannung, Arbeitstemperatur, Probenkorndurchmesser und den eingeschreckten Leerstellen abhangt.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123334762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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