Change of the Optical Properties of CdS Single Crystals upon High Dose Indium and Gallium Implantation

Abstract

Results of a complex study of photoluminescence, cathodoluminescence, and reflection spectra of CdS single crystals irradiated with indium and gallium ions at doses of 1015 and 1016 cm−2 are presented. It is shown, that after annealing of the CdS: In+ and CdS: Ga+ samples at low temperatures the spectral characteristics of the implanted side are similar to the spectra of CdIn2S4 and CdGa2S4 compounds, respectively. The influence of annealing on the properties of the crystals is investigated. [Russian Text Ignored].