Plasma Stimulated Impurity Redistribution in Silicon

Abstract

The influence of low temperature (≈100 °C) plasma treatment on the properties of silicon near surface layers is studied. A decrease in concentration of deep level centres as well as the formation of the new vacancy related complexes at a depth of 1 to 10 μm are observed. The changes in the silicon properties are found to be connected closely with the generation of intrinsic point defects. Experimental data confirming the possibility of enhanced gold diffusion are presented and the value of the diffusion coefficient is estimated. [Russian Text Ignored].