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Hypersonic Wave Attenuation in Yttrium Aluminum Garnet and Gadolinium Gallium Garnet 钇铝石榴石和钆镓石榴石的高超声速波衰减
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820211
M. Krzesińska, T. Szuta-Buchacz
{"title":"Hypersonic Wave Attenuation in Yttrium Aluminum Garnet and Gadolinium Gallium Garnet","authors":"M. Krzesińska, T. Szuta-Buchacz","doi":"10.1002/PSSA.2210820211","DOIUrl":"https://doi.org/10.1002/PSSA.2210820211","url":null,"abstract":"The velocity and the attenuation of hypersound waves propagating along [100], [110], and [111] axis in gadolinium gallium garnet and along [100] and [111] axis in yttrium aluminum garnet are measured at frequencies 0.714 to 2.106 GHz at the room temperature. The second order elastic constants, Debye temperatures, and the Gruneisen constants are calculated from this results.","PeriodicalId":238907,"journal":{"name":"April 16","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132301119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Structural Perfection of Selective GaAs Regions in Si Substrate Windows 硅衬底窗口中选择性砷化镓区结构的完善
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820208
V. I. Osinskii, F. M. Katsapov, E. Tyavlovskaya
{"title":"Structural Perfection of Selective GaAs Regions in Si Substrate Windows","authors":"V. I. Osinskii, F. M. Katsapov, E. Tyavlovskaya","doi":"10.1002/PSSA.2210820208","DOIUrl":"https://doi.org/10.1002/PSSA.2210820208","url":null,"abstract":"Structural perfection are studied of GaAs selective regions as grown in Si substrate windows on (100) and (111) GaAs nucleation wafers. The dislocation density distributions across the thickness and over the surface of 300 × 300 μm2 epitaxially grown selective regions are determined. The dislocation density on the selective (100) wafer-grown region surfaces is shown to be some 1.5 to 2 orders of magnitude lower than that of the nucleation wafer, and an order of magnitude lower as compared with continuous epitaxial layers. An expression is given which describes the proposed model of dislocation density reduction across the thickness of epitaxial selective regions. It is found that the maximum density is observed at the centre of the selective region. Away from the centre, the density reduces and at a distance of some tens of microns, i.e. at the selective region edge, there are practically no dislocations. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":238907,"journal":{"name":"April 16","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122053557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dynamic Alterations of the Surface Composition during Sputtering of Silicides 硅化物溅射过程中表面成分的动态变化
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820215
T. Wirth, V. Atzrodt, H. Lange
{"title":"Dynamic Alterations of the Surface Composition during Sputtering of Silicides","authors":"T. Wirth, V. Atzrodt, H. Lange","doi":"10.1002/PSSA.2210820215","DOIUrl":"https://doi.org/10.1002/PSSA.2210820215","url":null,"abstract":"The temporal development of composition alterations in the surface region of Nisi, MoSi2, and PtSi due to bombardment with Ar+ ions of energy between 2 and 5 keV is studied by 1 keV AES depth profiling. In all cases an enrichment of the heavier (metal) component some nm below the surface is observed. By comparing this result with recent Monte-Carlo calculations it is concluded that the mass difference between components plays the dominant role in the build-up of the composition alterations. This conclusion is supported by trends in the metal peak depth and maximum concentration as well as in surface composition data. The studies show that the composition changes observed are due to a superposition of several sputter mechanisms. \u0000 \u0000 \u0000 \u0000Es wird die zeitliche Entwicklung in der Veranderung der Komposition, die durch 2 bis 5 keV Ar+-Ionen an der Oberflache von Nisi, MoSi2 und PtSi erzeugt worden ist, mit Hilfe von 1 keV Auger-Tiefenprofilmessungen verfolgt. In allen Fallen wird eine Anreicherung der schweren (metallischen) Komponente einige nm unter der Oberflache beobachtet. Durch Vergleich mit kurzlich publizierten Monte-Carlo-Rechnungen wird geschlossen, das die Massendifferenz zwischen den Komponenten die dominierende Rolle beim Aufbau der Kompositionsanderungen spielt. Diese Schlusfolgerung wird gestutzt durch Trends, die die Tiefe des Metallmaximums, die Konzentration im Maximum und die Oberflachenkomposition aufweisen. Die Untersuchungen zeigen, das die beobachteten Kompositionsanderungen durch mehrere Sputtermechanismen hervorgerufen werden.","PeriodicalId":238907,"journal":{"name":"April 16","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134223995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Deposition of Bi2CdS4 Films by the Spray Pyrolysis Technique 喷雾热解技术制备Bi2CdS4薄膜
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820251
S. Pawar, S. Tamhankar, C. Lokhande
{"title":"Deposition of Bi2CdS4 Films by the Spray Pyrolysis Technique","authors":"S. Pawar, S. Tamhankar, C. Lokhande","doi":"10.1002/PSSA.2210820251","DOIUrl":"https://doi.org/10.1002/PSSA.2210820251","url":null,"abstract":"","PeriodicalId":238907,"journal":{"name":"April 16","volume":"53 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131944673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Volterra-Type Dislocation Model of a Low-Angle [001] Twist Boundary in an F.C.C. Crystal 氟化碳晶体低角扭转边界的volterra型位错模型[001]
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820203
G. Gaidukov, A. Podrezov, J. Hirth
{"title":"A Volterra-Type Dislocation Model of a Low-Angle [001] Twist Boundary in an F.C.C. Crystal","authors":"G. Gaidukov, A. Podrezov, J. Hirth","doi":"10.1002/PSSA.2210820203","DOIUrl":"https://doi.org/10.1002/PSSA.2210820203","url":null,"abstract":"A Volterra description is used for the displacement fields of [001] twist boundaries in f.c.c. crystals in both, the isotropic and anisotropic elastic cases. A method is used to correct for nonlinear effects associated with the finite lattice rotations of two halves of a single crystal imposed in producing the boundary. Resultant diffraction patterns calculated from the displacement fields are in good agreement with experiment. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":238907,"journal":{"name":"April 16","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117116911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An Approximate Method for Determining the Segregation Coefficient of the Boron Drive Diffusion in Oxidizing Ambients 测定氧化环境中硼驱动扩散偏析系数的近似方法
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820240
D. K. An
{"title":"An Approximate Method for Determining the Segregation Coefficient of the Boron Drive Diffusion in Oxidizing Ambients","authors":"D. K. An","doi":"10.1002/PSSA.2210820240","DOIUrl":"https://doi.org/10.1002/PSSA.2210820240","url":null,"abstract":"","PeriodicalId":238907,"journal":{"name":"April 16","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131881751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Negative Differential Resistance in the I-U Characteristics of Surface Oxide Transistors 表面氧化物晶体管I-U特性中的负差分电阻
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820254
I. Zolomy
{"title":"Negative Differential Resistance in the I-U Characteristics of Surface Oxide Transistors","authors":"I. Zolomy","doi":"10.1002/PSSA.2210820254","DOIUrl":"https://doi.org/10.1002/PSSA.2210820254","url":null,"abstract":"","PeriodicalId":238907,"journal":{"name":"April 16","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121989143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Principal Component Analysis for Refractory Metal Silicide Investigations with Auger Electron Spectroscopy 用俄歇电子能谱研究难熔金属硅化物的主成分分析
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820205
V. Atzrodt, H. Lange
{"title":"Principal Component Analysis for Refractory Metal Silicide Investigations with Auger Electron Spectroscopy","authors":"V. Atzrodt, H. Lange","doi":"10.1002/PSSA.2210820205","DOIUrl":"https://doi.org/10.1002/PSSA.2210820205","url":null,"abstract":"Systematic studies of Auger line shape changes for the silicon LVV transition in refractory metal silicides confirm the homeotypism of these materials. Using this peak for principal component analysis (PCA) the identification of silicide phases is shown for Cr, Mo, W, and Ti disilicides. PCA depth profiling is less influenced by sputter and matrix effects than usual Auger depth profiles using elemental sensitivity factors. The position of the silicon-silicide interface is well defined by the crossover of the components in the PCA profiles. An interface component between MoSi2, and Si is determined. \u0000 \u0000 \u0000 \u0000Systematische Untersuchungen der AES-Linienform des Silizium-LVV-Ubergangs an schwer-schmelzenden Metallsiliziden bestatigen den Homeotypismus dieser Materialien. Mit der Prinzipiellen Komponenten-Analyse (PCA) ist anhand dieses Peaks die Silizidphasen-Identizierung fur Cr-, No-, W-und Ti-Disilizide moglich. PCA-Tiefenprofile werden durch Sputter-und Matrix-effekte weniger gestort als die herkommliche AES-Tiefenprofilanalyse mit Reinelement-Empfind-lichkeitsfaktoren. Die Position der Silizium-Silizid-Grenzflache wird durch den Schnittpunkt der Komponenten bei PCA-Tiefenprofilen eindeutig bestimmt. Eine Grenzflachenkomponente zwi-schen MoSi, und Si wird mit PCA gefunden.","PeriodicalId":238907,"journal":{"name":"April 16","volume":"1698 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129391808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Dynamical Effects of X-Ray Scattering in Laue Geometry for Si Crystals with Structure Defects 具有结构缺陷的Si晶体在lae几何中的x射线散射动力学效应
April 16 Pub Date : 1984-04-16 DOI: 10.1002/PSSA.2210820204
N. Olekhnovich, A. L. Karpei
{"title":"Dynamical Effects of X-Ray Scattering in Laue Geometry for Si Crystals with Structure Defects","authors":"N. Olekhnovich, A. L. Karpei","doi":"10.1002/PSSA.2210820204","DOIUrl":"https://doi.org/10.1002/PSSA.2210820204","url":null,"abstract":"Results of an investigation of thickness oscillations of the X-ray integrated intensity and anomalous transmission of plane-polarized MoKα radiation in the Laue geometry for dislocation-free silicon crystals containing oxygen are reported. The static Debye-Waller factor (E = exp (—L)) and the absorption coefficient due to the diffuse scattering (μd) for the 111, 333, 444 and 555 reflections are determined. From the comparison of the experimental dependence of In E on h2 + k2 + l2 with the theoretical one it is concluded that the structure defects are clusters. Using the ratio L/μd the cluster radius is estimated. Its value is found to be unchanged or little decreased after crystal annealing, while the defect density in the clusters increases. The measured integrated intensity of the reflections is divided into coherent and diffuse components. An anomalous trensmission effect is found for the diffuse component.","PeriodicalId":238907,"journal":{"name":"April 16","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129669819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ge-Al Thin Films for Selective Solar Absorbers 选择性太阳能吸收剂用锗铝薄膜
April 16 Pub Date : 1983-12-31 DOI: 10.1515/9783112494448-015
F. R. Kesslee, K. Dettmeb, W. Ritters
{"title":"Ge-Al Thin Films for Selective Solar Absorbers","authors":"F. R. Kesslee, K. Dettmeb, W. Ritters","doi":"10.1515/9783112494448-015","DOIUrl":"https://doi.org/10.1515/9783112494448-015","url":null,"abstract":"","PeriodicalId":238907,"journal":{"name":"April 16","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123542211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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