Dynamical Effects of X-Ray Scattering in Laue Geometry for Si Crystals with Structure Defects

Abstract

Results of an investigation of thickness oscillations of the X-ray integrated intensity and anomalous transmission of plane-polarized MoKα radiation in the Laue geometry for dislocation-free silicon crystals containing oxygen are reported. The static Debye-Waller factor (E = exp (—L)) and the absorption coefficient due to the diffuse scattering (μd) for the 111, 333, 444 and 555 reflections are determined. From the comparison of the experimental dependence of In E on h2 + k2 + l2 with the theoretical one it is concluded that the structure defects are clusters. Using the ratio L/μd the cluster radius is estimated. Its value is found to be unchanged or little decreased after crystal annealing, while the defect density in the clusters increases. The measured integrated intensity of the reflections is divided into coherent and diffuse components. An anomalous trensmission effect is found for the diffuse component.