Vacuum最新文献

{"title":"Structural and optical tuning of HfO2 nanoparticles synthesized via Sterculia oblongata: role of extraction solvents and calcination temperature","authors":"Mike Rahayu ,&nbsp;Rahma Demy Fitria Irbati ,&nbsp;Vatra Reksa Ananda ,&nbsp;Muh Risky Yusuf ,&nbsp;Dewangga Oky Bagus Apriandanu ,&nbsp;Aminah Umar ,&nbsp;Yoki Yulizar","doi":"10.1016/j.vacuum.2025.114718","DOIUrl":"10.1016/j.vacuum.2025.114718","url":null,"abstract":"<div><div>HfO₂ nanoparticles (NPs) were synthesized via <em>Sterculia oblongata</em> leaf extract (SOLE) at variable calcination temperatures (500 °C, 700 °C, and 900 °C) and different solvents of leaf extract, using water (SOLE-W), methanol (SOLE-M), and n-hexane (SOLE-Hx) to investigate the effect on the structural, morphological, size, and optical properties. HfO₂ NPs were successfully synthesized, confirmed by Fourier Transform Infrared Spectroscopy (FT-IR) characteristics Hf–O bond vibrations at 400–700 cm⁻¹. X-Ray Diffraction (XRD) analysis confirmed monoclinic HfO₂ (P2₁/c), while Ultraviolet–Visible Diffuse Reflectance Spectroscopy (UV–Vis DRS) analysis revealed an optical band gap of 5.37–5.63 eV. Field Emission Scanning Electron Microscopy (FE-SEM) displayed a spherical morphology, while High-Resolution Transmission Electron Microscopy (HR-TEM) images indicated distinct agglomeration with average size of HfO₂-Hx (66.8 ± 13.2 nm), HfO₂-M (16.2 ± 4.9 nm), and HfO₂-W (30.2 ± 5.1 nm). These findings highlight the significant role of solvent selection and calcination temperature in tailoring HfO₂ NPs properties. This study introduces green synthesis of HfO₂ NPs using plant extract, without the addition of a weak base and a capping agent.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114718"},"PeriodicalIF":3.9,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145057379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical and experimental investigation of ZrO2 incorporated in nickel phosphate matrix for hydrogen production: Catalytic efficiency and electronic properties","authors":"S. Mokhliss ,&nbsp;A. Ait Mhid ,&nbsp;E.M. Jalal ,&nbsp;H. Kerrai ,&nbsp;S. Ojala ,&nbsp;R. Brahmi ,&nbsp;M. Agunaou","doi":"10.1016/j.vacuum.2025.114685","DOIUrl":"10.1016/j.vacuum.2025.114685","url":null,"abstract":"<div><div>This study presents a comprehensive experimental and theoretical evaluation of a Zr/NiP catalyst for hydrogen production via the partial oxidation of ethanol (POE). The catalyst Zr/NiP was prepared by impregnation in liquid phase, and their catalytic tests in POE showed an excellent performance, achieving a hydrogen yield of 83% at 295 °C; thus, it can be attributed to the synergistic interaction between nickel and ZrO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, which enhances metal dispersion and catalytic stability. Catalytic activity tests performed at elevated temperature demonstrated a high selectivity toward CO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, with minimal acetaldehyde formation, indicating effective oxidative dehydrogenation and resistance to carbon deposition. Complementary density functional theory calculations confirmed that cubic ZrO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> has a wide band gap (5.3 eV), with electronic states dominated by O 2p and Zr 4d, which contribute to surface polarization and activate the catalytic sites. Optical studies confirm that ZrO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> has strong UV absorption, enhancing its photocatalytic efficiency for sustainable hydrogen production.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114685"},"PeriodicalIF":3.9,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145011151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructure and tribological properties of TiC particle reinforced 2024 aluminum matrix nanocomposites fabricated by laser powder bed fusion","authors":"Xiaohui Liu ,&nbsp;Yunzhong Liu ,&nbsp;Yuxuan Tang ,&nbsp;Shuaixing Wang ,&nbsp;Nan Du","doi":"10.1016/j.vacuum.2025.114716","DOIUrl":"10.1016/j.vacuum.2025.114716","url":null,"abstract":"<div><div>This study investigates the influence of TiC content (0–5.0 wt%) on microstructural evolution and tribological properties of TiC-reinforced 2024 aluminum matrix nanocomposites additively manufactured by laser powder bed fusion (LPBF), with a focus on the grain refinement effects and post-heat-treatment performance. Results reveal that TiC addition enables columnar-to-equiaxed grain transition, eliminates hot cracking, and increases density to 99.1 %. The grains are refined to an average grain size of approximately 1.6 μm by adding TiC. Following heat treatment, multi-scale strengthening phases (Al₁₈Ti₂Mg₃, L₁₂/D0₂₂-Al₃Ti, G.P. zones, θ'') form, enhancing hardness from 126.4 to 152.1 HV. The composite with 2.5 wt% TiC exhibits optimal wear resistance, achieving a 61 % reduction in wear rate compared to the unreinforced alloy, despite a moderate increase in friction coefficient. The excellent wear resistance is attributed to synergistic effects of enhanced load-bearing capacity and the suppression of adhesive wear. These findings highlight multifunctional roles of TiC in microstructural control and property enhancement of LPBF-processed composites, providing insights for aerospace applications like high-strength fuselage frames and wear-resistant bushings.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114716"},"PeriodicalIF":3.9,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145007731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of pre-strike characteristics in asynchronous closing of double-break vacuum circuit breakers based on field emission current","authors":"Yun Geng ,&nbsp;Xiaoshe Zhai ,&nbsp;Xiaofei Yao ,&nbsp;Yingsan Geng ,&nbsp;Minju Xu ,&nbsp;Zhiyuan Liu ,&nbsp;Siyi Wei","doi":"10.1016/j.vacuum.2025.114715","DOIUrl":"10.1016/j.vacuum.2025.114715","url":null,"abstract":"<div><div>To investigate the influence of asynchronous closing strategies on the pre-strike behavior of double-break vacuum circuit breakers, a series of DC closing experiments were conducted using two commercial 12 kV vacuum interrupters. The field emission current (<em>I</em>_pᵣ_e), pre-strike gap (<em>d</em>_pᵣ_e), and floating terminal voltage (<em>U</em>_pᵣ_e) were systematically measured under various closing sequences, and their statistical characteristics were analyzed using a three-parameter Weibull distribution model. Six asynchronous closing conditions were tested across DC voltage levels of 20 kV, 40 kV, and 60 kV. The results indicate that a clear linear negative correlation between <em>I</em>_pᵣ_e and <em>d</em>_pᵣ_e is observed only under synchronous closing. As the advance closing time of the high-voltage side increases, the voltage division ratio on the low-voltage side rises, leading to a significant increase in the median <em>d</em>_pᵣ_e (up to 1.40 mm) and a substantial decrease in <em>I</em>_pᵣ_e (as low as 0.90 mA), accompanied by reduced dispersion in both parameters. The correlation between <em>U</em>_pᵣ_e and <em>I</em>_pᵣ_e remains weak overall, suggesting that pre-strike behavior is predominantly governed by the physical gap distance, with limited influence from variations in floating potential. These findings demonstrate that by controlling the asynchronous timing of contact closure, the capacitive voltage distribution and division ratio can be effectively tuned to suppress fluctuations in field emission current and enhance insulation stability. This provides a theoretical foundation and empirical data to support the development of phase-controlled closing strategies for double-break vacuum circuit breakers.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114715"},"PeriodicalIF":3.9,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145046010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Linear Al-composition dependence of strain-free bandgap in AlxGa1-xN (0 ≤ x < 0.2) via optical spectroscopy and theoretical calculation","authors":"Shaosheng Fan ,&nbsp;Masao Ikeda ,&nbsp;Baoping Zhang ,&nbsp;Siyi Huang ,&nbsp;Yang Mei ,&nbsp;Jianping Liu ,&nbsp;Zongliang Liu ,&nbsp;Ke Xu","doi":"10.1016/j.vacuum.2025.114714","DOIUrl":"10.1016/j.vacuum.2025.114714","url":null,"abstract":"<div><div>This study presents the strain-free bandgap energy derived from the pseudomorphic Al_<em>x</em>Ga_1-<em>x</em>N layer, obtained through theoretical calculations and experiments. The Al_<em>x</em>Ga_1-<em>x</em>N films with various Al compositions (0 ≤ <em>x</em> &lt; 0.2) were coherently grown on GaN/sapphire templates by metal-organic chemical vapor deposition, keeping their thicknesses smaller than their critical thicknesses. The <em>c</em>-lattice constants of GaN layers onto which the Al_<em>x</em>Ga_1-<em>x</em>N layers were coherently grown were calculated considering the strain effects both from sapphire substrate and Al_<em>x</em>Ga_1-<em>x</em>N epilayer, and confirmed by measuring absolute <em>c</em>-lattice constants using two different diffraction planes (0002) and (0004) by XRD. The strain-induced shift in the Al_<em>x</em>Ga_1-<em>x</em>N bandgap energy due to the difference in thermal expansion coefficients between sapphire and nitrides and in-plane biaxial strain caused by a lattice-mismatch with GaN was calculated based on the band parameters given in the literature. The excitonic transition energy for fully-strained Al_<em>x</em>Ga_1-<em>x</em>N films was obtained based on the temperature-dependent photoluminescence, and confirmed also by observing exciton-related features in reflectance measurements at room temperature. By accounting for the bandgap shift induced by strain and the exciton binding energies, the Al-composition dependence of the strain-free bandgap energy was determined, yielding no bowing parameter.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114714"},"PeriodicalIF":3.9,"publicationDate":"2025-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145004484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructure and mechanical properties of micro alloyed high strength low carbon structural steels","authors":"Himanshu Kumar ,&nbsp;Anurag Misra ,&nbsp;S. Shiva ,&nbsp;Sunil Pathak ,&nbsp;Jan Kaufman ,&nbsp;Jan Brajer","doi":"10.1016/j.vacuum.2025.114707","DOIUrl":"10.1016/j.vacuum.2025.114707","url":null,"abstract":"<div><div>Mechanical properties of structural steel are inherently tied to their microstructural characteristics, which hugely depends on the alloy composition. This research examines the microstructural characteristics and tensile properties of three hot-rolled E450 structural steels. The primary distinction among the three steels lies in their carbon and manganese (Mn) contents. The microstructural evolution was correlated with mechanical properties. Microstructural analysis revealed the formation of a ferrite–pearlite microstructure. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) analyses were conducted to find the dominant strengthening mechanisms in all three steels. The steel with lower carbon and higher manganese content exhibited superior yield strength (580 ± 16 MPa) and tensile strength (657 ± 21 MPa), attributed to grain refinement, a higher low-angle grain boundary (LAGB) fraction, increased kernel average misorientation (KAM), and globular pearlite along the grain boundary, although with reduced elongation (∼20.15 %). Conversely, the steel with higher carbon and lower manganese content shows coarser pearlitic lamellae and a greater proportion of high angle grain boundaries (HAGBs), leading to lower strength but enhanced ductility and hardness. These findings reinforce that microalloying and compositional tuning play critical role in microstructural development and mechanical performance of E450 structural steels.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114707"},"PeriodicalIF":3.9,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144988945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evolution impact of key parameters on device gain for the microchannel plates with secondary electron emission functional layer","authors":"Weiqiang Li ,&nbsp;Nan Zhou ,&nbsp;Zhuoxi Lian ,&nbsp;Shengze Wang ,&nbsp;Dan Wang ,&nbsp;Guohe Zhang","doi":"10.1016/j.vacuum.2025.114703","DOIUrl":"10.1016/j.vacuum.2025.114703","url":null,"abstract":"<div><div>In this work, we conduct a research on key parameters affecting microchannel plate (MCP) gain. By depositing Al₂O₃ and MgO nanofilms on the MCP inner walls, the device gain increases from 10⁴ to over 10⁵ at 1500 V bias voltage. Simulations demonstrate that secondary electron emission (SEE) of the microchannel inner wall, bias voltage, and MCP architecture parameters can substantially affects MCP gain. Specifically, as the SEE yield peak value (<em>δ</em>_m) grows from 3 to 4, the MCP gain improves by over two orders of magnitude. Additionally, when the SEE functional layer thickness increases from 1 nm to 5 nm, <em>δ</em>_m climbs from 2.6 to 3.8, leading to an increase of MCP gain from 3 × 10³ to 5 × 10⁵. Simulation also indicates the MCP gain rises 2.3 times with every 100 V increase in bias voltage. Besides, the microchannel aspect ratio influences the MCP gain by affecting the electron collision times inside the microchannels, with simulations showing the MCP gain rises from 1.5 × 10² to 4 × 10⁵ at 1000 V bias voltage when the aspect ratio increases from 22 to 42. This work provides a detailed discussion of the key parameters influence on MCP gain, which holds engineering significance for enhancing the MCP performance.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"241 ","pages":"Article 114703"},"PeriodicalIF":3.9,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aluminum nitride micro ribbons photodetector for vacuum ultraviolet detection: High selectivity, fast response and thermal robustness","authors":"Zelong Fan ,&nbsp;Wenliang Li ,&nbsp;Luyang Wei ,&nbsp;Baikui Li ,&nbsp;Zhenhua Sun ,&nbsp;Honglei Wu","doi":"10.1016/j.vacuum.2025.114704","DOIUrl":"10.1016/j.vacuum.2025.114704","url":null,"abstract":"<div><div>Vacuum ultraviolet (VUV) photodetectors are essential for applications in space exploration, high-energy physics, and biological sensing. However, conventional devices typically rely on complex optical filters, high operating voltages, and bulky configurations, which limit their integration and scalability. In this work, high-quality aluminum nitride (AlN) single-crystalline micro ribbons with ab-plane-oriented growth were synthesized using the physical vapor transport (PVT) method and utilized to fabricate metal–semiconductor–metal (MSM) photoconductive detector. The device demonstrates outstanding VUV selectivity, with a rejection ratio (R₁₈₅/R₃₁₀) of 1293. Under 185 nm illumination, it delivers a photo-to-dark current ratio (PDCR) exceeding 1000. Temporal response measurements reveal a rise time of 170 ns and a decay time of 53 μs, indicating excellent dynamic performance. Furthermore, the device maintains stable operation at temperatures up to 150 °C, confirming its excellent thermal robustness. This work shows the potential of PVT-grown AlN micro ribbons as a promising material platform for compact, high-performance, and filter-free VUV photodetectors.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114704"},"PeriodicalIF":3.9,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144926784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectronic and thermoelectric characterization of MgX2S4 (X= Ga, In) Spinels: A DFT approach for energy Applications","authors":"S. Elhadfi ,&nbsp;H. Kerrai ,&nbsp;J. Chenouf ,&nbsp;Z. Arbaoui ,&nbsp;B. Fakrach ,&nbsp;A.H. Rahmani ,&nbsp;H. Chadli","doi":"10.1016/j.vacuum.2025.114696","DOIUrl":"10.1016/j.vacuum.2025.114696","url":null,"abstract":"<div><div>Spinel chalcogenides are attracting considerable interest due to their potential applications in advanced technologies such as solid-state lighting, thermoelectric systems, and photovoltaic devices. In the present work, the physical properties of spinel chalcogenides MgX<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> (X = Ga, In) are systematically investigated using a combination of density functional theory (DFT) and semi-classical transport theory. The research focuses on the electronic, optical, and transport properties of these materials, with an emphasis on their suitability for optoelectronic and solar energy conversion applications. Exchange and correlation potentials are considered within the framework of the generalized gradient approach (GGA), including spin–orbit coupling effects (SOC). The thermodynamic stability of both compounds is confirmed by the computed negative formation energies. The materials exhibit direct band gaps of approximately 1.47 eV for MgGa<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> and 1.81 eV for MgIn<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>. Optical properties as follows the dielectric function, refractive index,reflectivity and absorption coefficient were evaluated, revealing strong absorption (<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup><msup><mrow><mi>cm</mi></mrow><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></math></span> ) in the visible region, which supports their potential in optoelectronic applications. Transport properties, Including the Seebeck coefficient, figure of merit (ZT), electrical and thermal conductivity, and others, were evaluated. The estimated ZT values are <span><math><mo>∼</mo></math></span> 0.98 for MgGa<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> and <span><math><mo>∼</mo></math></span> 1 for MgIn<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> near room temperature, indicating good thermoelectric performance. Furthermore, the transport data suggest that MgX<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>S<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> (X = Ga, In) exhibits p-type semiconducting behavior, reinforcing its promise for thermoelectric applications.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"241 ","pages":"Article 114696"},"PeriodicalIF":3.9,"publicationDate":"2025-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular doping of puckered arsenene for effective doping and potential for nanogenerator applications","authors":"Pinbo Huang ,&nbsp;Zhiang Liu ,&nbsp;Changhao Wang ,&nbsp;Ping Huang ,&nbsp;Weirui Zhang ,&nbsp;Zhen Cui","doi":"10.1016/j.vacuum.2025.114701","DOIUrl":"10.1016/j.vacuum.2025.114701","url":null,"abstract":"<div><div>Puckered arsenene exhibits a moderate bandgap, high carrier mobility, and unique anisotropic properties, making it a promising two-dimensional semiconducting material for nanoelectronic applications. In this study, we explored the molecular doping of puckered arsenene with tetracyanoethylene (TCNE) and tetrathiafulvalene (TTF) through first-principles calculations. TCNE acts as an electron acceptor, achieving effective p-type doping with a doping gap of only 0.12 eV. Although TTF initially ineffective due to a large doping gap of 0.70 eV, it becomes an effective n-type dopant under an external electric field. Furthermore, we demonstrate the potential of the TCNE-TTF co-doped puckered arsenene system as a nanogenerator for energy conversion. Theoretical calculations predict an high open-circuit voltage of 2.07 V. This study provides a novel approach for engineering the electronic properties of puckered arsenene and highlights its suitability for nanoelectronics and energy conversion.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"242 ","pages":"Article 114701"},"PeriodicalIF":3.9,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144988946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}