Elucidating the phase change memory properties of (GeTe)1-x(GeSe2)x (0 ≤ x ≤ 0.21) films

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2025-06-07 DOI:10.1016/j.vacuum.2025.114491

Abdul Whab, Shahin Parveen, Nidhi Bhatt, Pumlianmunga

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引用次数: 0

Abstract

GeSe₂-doped GeTe phase change memory alloys are considered for high-temperature applications. Films of compositions (GeTe)_1-x(GeSe₂)_x (x = 0, 0.07, 0.14, 0.21) showed an increase in the crystallization temperature (T_c) from 170 °C to 258 °C after doping with GeSe₂, which is caused by an improvement in the activation energy. Incorporation of GeSe₂ increases the amorphous as well as crystalline resistances, resulting in the decrease in threshold current (I_th) from 0.9 mA to 0.4 mA. The 10 years of data retention temperature have been increased from 96 °C to 128 °C with a corresponding increase in the activation energy from 2.43 eV to 2.73 eV. The amorphous phase crystallized to a rhombohedral structure with no phase separation, and the crystallite size decreases with the increase in the GeSe₂ concentration. X-ray photoelectron spectroscopy (XPS) confirmed the presence of stronger Ge-Se bonds, which increase the localization of charge carriers, resulting in the increase in optical band gap. Increased thermal stability (high T_c), high electrical resistance contrast between the amorphous and crystalline states, high crystalline resistance, and single-phase GeTe are characteristics of phase change memory (PCM) material for high-temperature applications.

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阐明了（GeTe）1-x(GeSe2)x（0≤x≤0.21）薄膜的相变记忆特性

掺gese2的GeTe相变记忆合金被考虑用于高温应用。GeSe2掺杂后，组合物（GeTe）1-x(GeSe2)x （x = 0,0.07, 0.14, 0.21）的结晶温度（Tc）由170℃提高到258℃，这是由于活化能的提高所致。GeSe2的加入增加了非晶电阻和结晶电阻，导致阈值电流（Ith）从0.9 mA降低到0.4 mA。10年数据保存温度由96℃提高到128℃，活化能由2.43 eV提高到2.73 eV。随着GeSe2浓度的增加，非晶相结晶成无相分离的菱形结构，晶粒尺寸减小。x射线光电子能谱（XPS）证实了更强的Ge-Se键的存在，这增加了载流子的局域化，导致光学带隙增大。增加的热稳定性（高Tc），非晶和晶态之间的高电阻对比，高晶体电阻和单相GeTe是相变记忆（PCM）材料用于高温应用的特性。

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.