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2019 41st Annual EOS/ESD Symposium (EOS/ESD)最新文献

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Circular Aperture Effect on Radiated Emissions of Electrostatic Discharge Events 圆形孔径对静电放电事件辐射发射的影响
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869994
Gregory Larson
{"title":"Circular Aperture Effect on Radiated Emissions of Electrostatic Discharge Events","authors":"Gregory Larson","doi":"10.23919/EOS/ESD.2019.8869994","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869994","url":null,"abstract":"Waveguide cutoff phenomenon theory and the associated aperture effects on the radiated emissions of Electrostatic Discharges measured during process module assessments are introduced. Characterization of Charge Device Model (CDM) induced events were recorded with an oscilloscope at five voltage levels and three antenna heights with and without an aperture impeding free space propagation. The frequency domain response of ESD events is presented with the aid of real time spectrum analysis.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123457266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of EMC analysis technology using large-scale electromagnetic field analysis 基于大尺度电磁场分析的电磁兼容分析技术的发展
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8870011
Ryo Matsubara, K. Inokuchi
{"title":"Development of EMC analysis technology using large-scale electromagnetic field analysis","authors":"Ryo Matsubara, K. Inokuchi","doi":"10.23919/EOS/ESD.2019.8870011","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8870011","url":null,"abstract":"Recently, digital devices require LSI operated with higher frequency and lower voltage, therefore Countermeasures for EMC (Electromagnetic Compatibility) problem are becoming more difficult. Analytical EMC solving techniques, which contribute to design more directly and efficiently than the conventional approach, has been developed for Electro Magnetic Radiation and Electro-Static Discharge.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131469771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
EOS Protection of the Low Voltage Gate Oxide Devices 低压栅氧化器件的EOS保护
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8870009
V. Vashchenko, S. Malobabic
{"title":"EOS Protection of the Low Voltage Gate Oxide Devices","authors":"V. Vashchenko, S. Malobabic","doi":"10.23919/EOS/ESD.2019.8870009","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8870009","url":null,"abstract":"A clamp level solution for ESD, EOS and overvoltage protection of LV CMOS circuits is suggested and experimentally validated. Based on simulation and experimental results the suggested mini clamp design is found to be adequate for 1.8V maximum operating voltage of protected CMOS devices. The solution is achieved by combination of high threshold voltage reference and two versions of the efficient pull-up drivers. With the simple PMOS driver the clamping voltage is achieved in the range 3.7–4.3V under leakage voltage <0.1nA. For the clamp with the CMOS latch driver a 2.7–3.3V clamping voltage range under 0.1nA leakage current at 2V was experimentally demonstrated.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122143959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A Low-Voltage Microwave Plasma Ionizer Without the ESD Risk Due to a High Voltage Source 一种无高压源ESD危险的低压微波等离子体发生器
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869973
Byoungjin Bae, Junsik Park, Jingook Kim
{"title":"A Low-Voltage Microwave Plasma Ionizer Without the ESD Risk Due to a High Voltage Source","authors":"Byoungjin Bae, Junsik Park, Jingook Kim","doi":"10.23919/EOS/ESD.2019.8869973","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869973","url":null,"abstract":"A low-voltage microwave plasma ionizer is proposed. The proposed ionizer eliminates the ESD risk on a target sensitive electronic device due to strong electric field induced by a high voltage source in the ionizer itself and has a good performance to neutralize a charged device.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"502 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123417251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Measurement of Electrostatic Discharge Through Human Body Contacting Metallic Objects Under HVAC Transmission Lines 暖通输电线路下人体接触金属物体静电放电的测量
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869986
T. Lu, Xiuying Li
{"title":"Measurement of Electrostatic Discharge Through Human Body Contacting Metallic Objects Under HVAC Transmission Lines","authors":"T. Lu, Xiuying Li","doi":"10.23919/EOS/ESD.2019.8869986","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869986","url":null,"abstract":"When the human body exposed to the electric field contacts other metallic objects, electrostatic discharge will be generated between fingers and objects. Some on-site sensation experiments are carried out under 500kV AC overhead transmission lines. Discharge currents in 3 cases with different electric field magnitude are measured to evaluate the transient electric shock energy. The results are helpful to understand the severity of the electric shock between the human body and the metallic object.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116879858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HMM Failure Level Variations Revisited HMM故障级别的变化
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8870002
M. Dekker, T. Smedes, G. Notermans, R. Ashton
{"title":"HMM Failure Level Variations Revisited","authors":"M. Dekker, T. Smedes, G. Notermans, R. Ashton","doi":"10.23919/EOS/ESD.2019.8870002","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8870002","url":null,"abstract":"HMM has been proposed as a standard method to evaluate stand-alone devices with a system level pulse. Mixed results have been published earlier. This paper describes 3 experiments that address possible causes for variations in test results when comparing different guns or different labs. The most important contributors and possible improvements are identified.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130323796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Saturation Attenuator for TVS Devices TVS器件的饱和衰减器
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869983
E. Worley
{"title":"Saturation Attenuator for TVS Devices","authors":"E. Worley","doi":"10.23919/EOS/ESD.2019.8869983","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869983","url":null,"abstract":"One very important issue with TVS clamps is their ability to limit the voltage below the level that can damage a state of the art SOC I/O which can fail at voltages as low as 3.5V. Since lowering the shunt resistance of the TVS to acceptable levels is very difficult, another option is to introduce an attenuation resistor between the TVS and I/O. This paper will look at the saturation resistor as a means to protect low level I/Os. Also, failure models of I/Os with be developed","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129795697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Determining Proper Methods of Measuring Conveyor Belts Resistance to Ground 确定测量输送带对地阻力的适当方法
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869979
D. Bellmore
{"title":"Determining Proper Methods of Measuring Conveyor Belts Resistance to Ground","authors":"D. Bellmore","doi":"10.23919/EOS/ESD.2019.8869979","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869979","url":null,"abstract":"Recently, there have been several discussions regarding what is the proper method of measuring the resistance of conveyor belts to ground. This study looks at using standard worksurface measurement methods to characterize conveyor belt resistance to ground and the resistance to ground that might be affected by devices or assemblies.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125658180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Capacitive Discharge to Ground of a Flat Metal Disk with a Pin Contact 带引脚触点的扁平金属盘对地电容放电
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869996
I. Iben
{"title":"Capacitive Discharge to Ground of a Flat Metal Disk with a Pin Contact","authors":"I. Iben","doi":"10.23919/EOS/ESD.2019.8869996","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869996","url":null,"abstract":"Capacitance (C) and voltage (V) on a flat disk is calculated as a function of separation (d) from a ground plane. At large d, C and V are constants. C increases as 1/d and V goes to 0 at d=0, eliminating ESD. Adding a contact pin significantly increases ESD risk.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122841870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
ESD Protection for Poly Fuses 聚熔断器的ESD保护
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869968
Shao-Chang Huang, Li-Fan Chen, Chun-Chih Chen, Tingyou Lin, K. Hsu, Yeh-Ning Jou, Chih-Hsuan Lin, Yung-Chang Chen, Wei-Sung Chen, Jian-Hsing Lee
{"title":"ESD Protection for Poly Fuses","authors":"Shao-Chang Huang, Li-Fan Chen, Chun-Chih Chen, Tingyou Lin, K. Hsu, Yeh-Ning Jou, Chih-Hsuan Lin, Yung-Chang Chen, Wei-Sung Chen, Jian-Hsing Lee","doi":"10.23919/EOS/ESD.2019.8869968","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869968","url":null,"abstract":"Electrostatic Discharge (ESD) can falsely program or erase the poly fuse cell even with a standard ESD protection device in parallel. In this study, special ESD protection circuits including phase change disabling circuits are successfully introduced. It is demonstrated that those can prevent the poly fuse from ESD damage by blocking ESD currents from the highly sensitive poly fuse. So, these circuits are required to allow for a protection of poly fuses despite of their extremely low ESD damage voltage of about 2–3V.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116994503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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