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2019 41st Annual EOS/ESD Symposium (EOS/ESD)最新文献

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EOS/ESD 2019 Future Events Page EOS/ESD 2019未来活动页面
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/eos/esd.2019.8869960
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引用次数: 0
An Approach to Characterize Behavior of Multiport ICs under ESD Stress 多端口集成电路在ESD应力下的性能表征方法
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8870004
O. Izadi, K. Muhonen, N. Peachey, D. Pommerenke
{"title":"An Approach to Characterize Behavior of Multiport ICs under ESD Stress","authors":"O. Izadi, K. Muhonen, N. Peachey, D. Pommerenke","doi":"10.23919/EOS/ESD.2019.8870004","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8870004","url":null,"abstract":"ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"410 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124370485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
EOS/ESD 2019 Panel Discussion EOS/ESD 2019小组讨论
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/eos/esd.2019.8869991
{"title":"EOS/ESD 2019 Panel Discussion","authors":"","doi":"10.23919/eos/esd.2019.8869991","DOIUrl":"https://doi.org/10.23919/eos/esd.2019.8869991","url":null,"abstract":"","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121977738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Discharge Current Analysis with Charged Connector Pins 充电连接器引脚放电电流分析
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869966
P. Tamminen, R. Fung, R. Wong
{"title":"Discharge Current Analysis with Charged Connector Pins","authors":"P. Tamminen, R. Fung, R. Wong","doi":"10.23919/EOS/ESD.2019.8869966","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869966","url":null,"abstract":"Electrical connectors can get static charges during handling and discharge on a printed circuit board when assembled. The rise time and shape of the discharge current waveform is studied with simulation and measurement methods. Results predicts that the ESD current rise time can be less than 10 ps.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125049477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dummy Versus Live ESD Sensitive Devices Charge Analysis for Automated Handling Equipment ESD Qualification 自动搬运设备静电放电鉴定中静电放电敏感器件的放电分析
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869997
Jeremy Ong, Bernard Chin, L. H. Koh
{"title":"Dummy Versus Live ESD Sensitive Devices Charge Analysis for Automated Handling Equipment ESD Qualification","authors":"Jeremy Ong, Bernard Chin, L. H. Koh","doi":"10.23919/EOS/ESD.2019.8869997","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869997","url":null,"abstract":"Dummy units are commonly used for automated handling equipment (AHE) ESD qualification prior to releasing for production, due to resource limitations. Charge analysis for one hour vs 72 hours baking time for ESD sensitive devices (ESDS) were studied. This paper proposes live ESDS for AHE ESD qualification.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131628286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application Example of a Novel Methodology to Generate IC Models for System ESD and Electrical Stress Simulation out of the Design Data 基于设计数据生成系统ESD和电应力仿真集成电路模型的新方法应用实例
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869981
Michael Ammer, A. Rupp, U. Glaser, Yiqun Cao, Martin Sauter, L. Maurer
{"title":"Application Example of a Novel Methodology to Generate IC Models for System ESD and Electrical Stress Simulation out of the Design Data","authors":"Michael Ammer, A. Rupp, U. Glaser, Yiqun Cao, Martin Sauter, L. Maurer","doi":"10.23919/EOS/ESD.2019.8869981","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869981","url":null,"abstract":"Generating IC models for system ESD simulations out of measurements is quite cumbersome. For products with custom-made ESD protection concepts one cannot use a model library for I/O standard cells. This work shows an application example of a novel methodology to generate IC ESD models out of design data.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125517621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Evaluation of ESD Garment with Conductive Ribbon 导电带防静电服的性能评价
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869990
Bernard Chin, Jeremy Ong, L. H. Koh
{"title":"Evaluation of ESD Garment with Conductive Ribbon","authors":"Bernard Chin, Jeremy Ong, L. H. Koh","doi":"10.23919/EOS/ESD.2019.8869990","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869990","url":null,"abstract":"A new batch of ESD garment (smock) was found to fail on compliance verification after 10 washes. An experiment was carried out to verify if smocks attached with conductive ribbon will have longer durability. This paper illustrates best practices in accessing and evaluating the durability of two types of smock up to 110 and 420 washes.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"2003 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129674275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HV Latch-up at System Level ESD Current Injection 系统级ESD电流注入的高压锁存
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869971
D. Marreiro, V. Vashchenko
{"title":"HV Latch-up at System Level ESD Current Injection","authors":"D. Marreiro, V. Vashchenko","doi":"10.23919/EOS/ESD.2019.8869971","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869971","url":null,"abstract":"A correlation between latchup conditions induced by injection at standard qualification latchup test and by system-level ESD pulsed current is studied. Through comparison of the standard test and TLP regimes the initial insight about latchup prevention layout spacing rules to withstand the ESD pulse injection conditions is obtained. The cases of low and high side HV pocket-to-pocket transient latchup conditions are also compared.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123526381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CPM Test Limitation Study for AC, Pulsed AC and High Frequency AC Ionizers vs. DC Based Ionizers 交流、脉冲交流和高频交流电离器与直流电离器的CPM试验限制研究
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8870003
Joshua Yoo, E. Choi, E. Koo
{"title":"CPM Test Limitation Study for AC, Pulsed AC and High Frequency AC Ionizers vs. DC Based Ionizers","authors":"Joshua Yoo, E. Choi, E. Koo","doi":"10.23919/EOS/ESD.2019.8870003","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8870003","url":null,"abstract":"There are some technical limitations with current charge plate monitor (CPM) technology for voltage switching type of ionizers such as AC, pulsed AC and high frequency AC ionizers. Technical limitations are mainly related with lack of response speed of CPM and other simpler portable ionizer testing instruments. ANSI/ESD S20.20 and IEC 61340-5-1 standards requires offset value for ionizer balance testing. CPM manufacturer provides average test data, and this isn’t match with offset value and provide different measurement value. Current CPM technology has limited to indicate risk of various types of ionizers and these ionizers can cause of ESD event rather than neutralize charged energy. This paper studied various type of ionizers and measurement value differences with CPM and high-speed oscilloscope.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132560276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Toward Standardization of Low Impedance Contact CDM 低阻抗接触式CDM标准化研究
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8870006
N. Jack, B. Carn, Josh Morris
{"title":"Toward Standardization of Low Impedance Contact CDM","authors":"N. Jack, B. Carn, Josh Morris","doi":"10.23919/EOS/ESD.2019.8870006","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8870006","url":null,"abstract":"The 16.6 ohm implementation of contact CDM (LICCDM) recently published in ANSI-ESD Standard Practice 5.3.3 is shown to produce waveforms of similar shape, Ifail, and Ipeak vs. Ceff dependency as JS-002. The non-monotonicity of JS-002 at low voltages is overcome using LICCDM. A path to joint standardization with air discharge testing is proposed.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"117 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122879204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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