发布求助
文献互助 智能选刊 最新文献

2019 41st Annual EOS/ESD Symposium (EOS/ESD)最新文献

筛选
英文 中文
ESD Protection Impact and Modelling of Bias-Dependent Series Resistance in Diodes 二极管中偏置相关串联电阻的ESD保护影响和建模
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869988
Y. Zhou, Guanghai Ding, J. Hajjar
{"title":"ESD Protection Impact and Modelling of Bias-Dependent Series Resistance in Diodes","authors":"Y. Zhou, Guanghai Ding, J. Hajjar","doi":"10.23919/EOS/ESD.2019.8869988","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869988","url":null,"abstract":"An investigation of different forward-bias and reverse-bias on-resistance in diodes is presented. The impact of this often neglected effect on ESD protection design is demonstrated. A macro-model of a diode has been developed to account for the bias dependent resistance. This has been used in SPICE-type circuit level ESD simulation.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128149625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Are ESD Chairs Good Enough to Be Used as Primary Means of Personnel Grounding? 防静电椅是否足以作为人员接地的主要手段?
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869977
Reinhold Gärtner, Magdalena Hilkersberger, W. Stadler, J. Niemesheim, J. Speicher
{"title":"Are ESD Chairs Good Enough to Be Used as Primary Means of Personnel Grounding?","authors":"Reinhold Gärtner, Magdalena Hilkersberger, W. Stadler, J. Niemesheim, J. Speicher","doi":"10.23919/EOS/ESD.2019.8869977","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869977","url":null,"abstract":"Personnel handling ESD sensitive items in seated position are supposed to be grounded via a wrist strap. The paper describes measurement techniques to assess whether grounding personnel via ESD flooring and chair is feasible. Different techniques to measure the body voltage generation and the influence of chair castors are discussed.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131927943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mechanism of Sequential Finger Triggering of Multi-Finger Floating-Base SCRs due to Inherent Substrate Currents 基于衬底电流的多指浮基可控硅顺序手指触发机制
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869984
H. Karaca, C. Fleury, S. Holland, Hans-Martin Ritter, G. Notermans, D. Pogany
{"title":"Mechanism of Sequential Finger Triggering of Multi-Finger Floating-Base SCRs due to Inherent Substrate Currents","authors":"H. Karaca, C. Fleury, S. Holland, Hans-Martin Ritter, G. Notermans, D. Pogany","doi":"10.23919/EOS/ESD.2019.8869984","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869984","url":null,"abstract":"Successive voltage drops near the holding voltage associated with sequential finger triggering (SFT) are observed in multi-finger floating-base SCRs. A time delay between the triggering of neighboring fingers is in the 3–150ns range and it is observed only for long pulse rise times (10ns). TCAD simulation explains that SFT is due to lateral carrier diffusion-limited processes.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132670211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of CDM Measurement for Bare Dies and Wafers 裸模和晶圆的CDM测量研究
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869985
Teruo Suzuki, K. Okubo, H. Taniguchi, M. Sawada, H. Okumura, Kazuo Shinke, Osamu Mihama
{"title":"Study of CDM Measurement for Bare Dies and Wafers","authors":"Teruo Suzuki, K. Okubo, H. Taniguchi, M. Sawada, H. Okumura, Kazuo Shinke, Osamu Mihama","doi":"10.23919/EOS/ESD.2019.8869985","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869985","url":null,"abstract":"Resolving frequent ESD failures at an assembly house was time-consuming. Testing CDM robustness in the wafer/bare die state would provide early information about problems with semiconductor design or electrostatic controls. With our new JS-002-compliant Wafer CDM tester, we tested products as wafers/bare dies to achieve the desired robustness.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"58 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120937785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Concurrent ESD and Surge Protection Clamps in RF Power Amplifier 射频功率放大器中的并发ESD和浪涌保护钳
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869975
Myunghwan Park, J. Tseng, Tzung-yin Lee, D. Ripley
{"title":"Concurrent ESD and Surge Protection Clamps in RF Power Amplifier","authors":"Myunghwan Park, J. Tseng, Tzung-yin Lee, D. Ripley","doi":"10.23919/EOS/ESD.2019.8869975","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869975","url":null,"abstract":"For cost reduction and device miniaturization efforts, the system-level surge suppressor is often being removed, which motivates developing concurrent HBM and surge protection clamps. Here, we characterize Surge and HBM performance of the conventional clamps, and further propose a partial feedback combo clamp and ballasted RC-triggered clamp.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127913364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 3-Terminal HV-ESD Protection as Specialized Solution for EDn-MOSTs that Directly Link Two External Pads 针对直接连接两个外部焊盘的edn - most的专用解决方案——3端高压- esd保护
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8870010
G. de Raad, Da-Wei Lai
{"title":"A 3-Terminal HV-ESD Protection as Specialized Solution for EDn-MOSTs that Directly Link Two External Pads","authors":"G. de Raad, Da-Wei Lai","doi":"10.23919/EOS/ESD.2019.8870010","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8870010","url":null,"abstract":"This paper describes ESD design around EDn-MOST devices that connect directly between different I/O pads. In this topology, a trade-off exists between drain voltage and maximum allowable current density through the EDn-MOST. The disclosed ESD device, the 3-terminal HV-ESD, avoids that trade-off and so increases design freedom.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"251 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129040084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EOS/ESD 2019 Bios EOS/ESD 2019 Bios
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/eos/esd.2019.8870000
{"title":"EOS/ESD 2019 Bios","authors":"","doi":"10.23919/eos/esd.2019.8870000","DOIUrl":"https://doi.org/10.23919/eos/esd.2019.8870000","url":null,"abstract":"","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130597576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EOS/ESD 2019 Awards [9 awards] EOS/ESD 2019奖项[9个奖项]
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/eos/esd.2019.8869962
{"title":"EOS/ESD 2019 Awards [9 awards]","authors":"","doi":"10.23919/eos/esd.2019.8869962","DOIUrl":"https://doi.org/10.23919/eos/esd.2019.8869962","url":null,"abstract":"","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126627653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TVS Devices Transient Behavior Modeling Framework and Application to SEED TVS器件瞬态行为建模框架及其在SEED中的应用
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869992
Li Shen, Shubhankar Marathe, J. Meiguni, Guangxiao Luo, Jianchi Zhou, D. Pommerenke
{"title":"TVS Devices Transient Behavior Modeling Framework and Application to SEED","authors":"Li Shen, Shubhankar Marathe, J. Meiguni, Guangxiao Luo, Jianchi Zhou, D. Pommerenke","doi":"10.23919/EOS/ESD.2019.8869992","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869992","url":null,"abstract":"The transient behavior for four different types of TVS (non-snapback, snapback, spark gap, varistor) is modeled using the same modeling framework. By a 10 ns VF-TLP, the quasi-static I-V curve and the transient turn-on are captured and modeled in ADS. The models are applied in a SEED simulation to investigate the strengths and weaknesses of the modeling frame.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116880594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Impact of Lowly Doped Regions on Transient Overshoot Voltage During vf-TLP Pulses for Bipolar Devices 低掺杂区对双极器件vf-TLP脉冲瞬态过调电压的影响
2019 41st Annual EOS/ESD Symposium (EOS/ESD) Pub Date : 2019-09-01 DOI: 10.23919/EOS/ESD.2019.8869978
S. Holland, G. Notermans, Hans-Martin Ritter
{"title":"Impact of Lowly Doped Regions on Transient Overshoot Voltage During vf-TLP Pulses for Bipolar Devices","authors":"S. Holland, G. Notermans, Hans-Martin Ritter","doi":"10.23919/EOS/ESD.2019.8869978","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2019.8869978","url":null,"abstract":"The contribution of the lowly doped region to the transient overshoot voltage of a junction diode, a bipolar transistor and a SCR is investigated with vf-TLP measurements and calibrated TCAD simulations. The effect of the conductivity modulation is stronger for a BJT and SCR than for a forward biased diode.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114903955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书