Impact of Lowly Doped Regions on Transient Overshoot Voltage During vf-TLP Pulses for Bipolar Devices

Abstract

The contribution of the lowly doped region to the transient overshoot voltage of a junction diode, a bipolar transistor and a SCR is investigated with vf-TLP measurements and calibrated TCAD simulations. The effect of the conductivity modulation is stronger for a BJT and SCR than for a forward biased diode.