{"title":"A 3-Terminal HV-ESD Protection as Specialized Solution for EDn-MOSTs that Directly Link Two External Pads","authors":"G. de Raad, Da-Wei Lai","doi":"10.23919/EOS/ESD.2019.8870010","DOIUrl":null,"url":null,"abstract":"This paper describes ESD design around EDn-MOST devices that connect directly between different I/O pads. In this topology, a trade-off exists between drain voltage and maximum allowable current density through the EDn-MOST. The disclosed ESD device, the 3-terminal HV-ESD, avoids that trade-off and so increases design freedom.","PeriodicalId":233379,"journal":{"name":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","volume":"251 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 41st Annual EOS/ESD Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EOS/ESD.2019.8870010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes ESD design around EDn-MOST devices that connect directly between different I/O pads. In this topology, a trade-off exists between drain voltage and maximum allowable current density through the EDn-MOST. The disclosed ESD device, the 3-terminal HV-ESD, avoids that trade-off and so increases design freedom.