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2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)最新文献

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Prospects of building capacitive nonlinear lines using ceramic PZT for high-frequency operation 用陶瓷压电陶瓷构建高频电容非线性线路的前景
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518854
J. O. Rossi, L. P. Silva Neto, F. S. Yamasaki, E. Schamiloglu
{"title":"Prospects of building capacitive nonlinear lines using ceramic PZT for high-frequency operation","authors":"J. O. Rossi, L. P. Silva Neto, F. S. Yamasaki, E. Schamiloglu","doi":"10.1109/IPMHVC.2012.6518854","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518854","url":null,"abstract":"The objective of this paper is the study of ceramic dielectrics for nonlinear transmission line (NLTL) applications in high-voltage (HV) compact pulsed power systems at high frequencies. Barium and strontium titanate (BST) ceramics have been used with great success as excellent dielectrics in the construction of high voltage (HV) commercial ceramic capacitors with reduced dimensions because of their high dielectric constant. However, the attempts to reach frequencies above 500 MHz up to 1 GHz using BST ceramics in nonlinear lumped lines have been unsuccessful due to the loss in the dielectric material that limits the operating frequencies up to about 250 MHz. On the other hand, these results indicated that the use of a lower loss nonlinear dielectric of reduced permittivity could be the solution for achieving higher frequencies in nonlinear capacitive lines. Therefore, the main point of this work is to characterize another type of ceramic known as PZT (Lead Zirconate Titanate), which is promising for NLTL applications.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115263571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Battery powered high output voltage bidirectional flyback converter for cylindrical DEAP actuator 用于圆柱形DEAP执行器的电池供电高输出电压双向反激变换器
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518778
Lina Huang, P. Thummala, Zhe Zhang, M. A. E. Andersen
{"title":"Battery powered high output voltage bidirectional flyback converter for cylindrical DEAP actuator","authors":"Lina Huang, P. Thummala, Zhe Zhang, M. A. E. Andersen","doi":"10.1109/IPMHVC.2012.6518778","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518778","url":null,"abstract":"DEAP (Dielectric Electro Active Polymer) actuator is essentially a capacitive load and can be applied in various actuation occasions. However, high voltage is needed to actuate it. In this paper, a high voltage bidirectional flyback converter with low input voltage is presented. The fundamental operating principle for both energy transfer process and energy recovery process is analyzed in detail. In order to verify the analysis, critical simulation results are provided. So far, a unidirectional flyback converter, which can realize the energy transfer process, has been implemented in the lab. The design parameters for flyback transformer and snubber circuits are illustrated. Moreover, the experimental waveforms are provided.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116500628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Fiber optic system for high frequency burst operation of a silicon carbide photoconductive semiconductor switch 用于碳化硅光导半导体开关高频突发操作的光纤系统
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518752
D. Mauch, C. Hettler, W. Sullivan, J. Dickens
{"title":"Fiber optic system for high frequency burst operation of a silicon carbide photoconductive semiconductor switch","authors":"D. Mauch, C. Hettler, W. Sullivan, J. Dickens","doi":"10.1109/IPMHVC.2012.6518752","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518752","url":null,"abstract":"A fiber optic system was constructed to demonstrate high frequency operation of a silicon carbide (SiC) photoconductive semiconductor switch (PCSS). The goal was to transform a single high-energy laser pulse into a train of pulses by adding static delays into a multimode fiber bundle. The individual optical fibers comprising the fiber bundle incrementally add an additional amount of flight time to the light pulse. The end result is a train of pulses with a fixed delay between each pulse. A frequency-tripled Nd:YAG laser (10 ns FWHM) generating up to 300 mJ of light energy at 355 nm is coupled from free space into the optical fibers comprising the fiber light guide. Experimental results examining the collection and transmission efficiency, and the temporal output are presented.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127926813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Pulsed voltage driven electrospray 脉冲电压驱动电喷雾
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518831
D. Obata, A. Nakamura, S. Katsuki, H. Akiyama
{"title":"Pulsed voltage driven electrospray","authors":"D. Obata, A. Nakamura, S. Katsuki, H. Akiyama","doi":"10.1109/IPMHVC.2012.6518831","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518831","url":null,"abstract":"This paper describes an electrospray driven by pulsed high voltages, compared to that driven by a direct current (DC) voltage. Using pulsed voltages is expected to deliver large amount of charges to the fluid surface, which allows us to control the behavior of the fluid. Pulsed voltage up to 30 kV was applied to a thin metal nozzle with a dripping ethanol from the tip. A time-resolved shadowgraph method was used to observe the behavior of the fluid in the electrospray. Our experiment shows the behavior of the fluid driven by pulsed voltages is clearly different from DC driven one. The dynamic formation of fluid jet occurs several hundred seconds after the pulse application because of its viscosity and inertial. Eventually the formed fluid jet split into several small jets, which was not seen in the DC driven electrospray. This indicates that the pulse voltage achieves high surface charge density exceeding the Rayleigh limit, resulting in the strong motive force for spraying.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"484 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133507447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effects of sub-contact nitrogen doping on silicon carbide photoconductive semiconductor switches 亚接触氮掺杂对碳化硅光导半导体开关的影响
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518684
W. Sullivan, C. Hettler, J. Dickens
{"title":"The effects of sub-contact nitrogen doping on silicon carbide photoconductive semiconductor switches","authors":"W. Sullivan, C. Hettler, J. Dickens","doi":"10.1109/IPMHVC.2012.6518684","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518684","url":null,"abstract":"Forming non-rectifying (ohmic) contacts to wide band gap semiconductors such as silicon carbide (SiC) requires a heavily doped subsurface layer to reduce the Schottky barrier height and allow efficient electron injection. Nitrogen, a common n-type dopant in SiC, was incorporated into a SiC sample using a laser enhanced diffusion process in which an impurity is incorporated into the semiconductor to very high surface concentrations (> 1020 cm-3) and very shallow depths (<; 200 nm) with the use of a pulsed 266 nm laser. This paper evaluates the effects of nitrogen introduced through laser enhanced diffusion on the contact formation and the efficiency of silicon carbide photoconductive switches at low and high injection levels under different biasing conditions. Nine lateral switches were fabricated on a high-purity semi-insulating 4H-SiC sample; three with no sub-contact doping, three with sub-contact doping on only one contact, and three with sub-contact doping on both contacts. Results are presented for tests under pulsed laser illumination with sub-contact doping on only the anode, only the cathode, neither, and on both of the contacts.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114219373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High field conduction in heat resistant polymers at elevated temperature for metallized film capacitors 金属化薄膜电容器高温下耐热聚合物的高场导电性
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518764
J. Ho, T. Jow
{"title":"High field conduction in heat resistant polymers at elevated temperature for metallized film capacitors","authors":"J. Ho, T. Jow","doi":"10.1109/IPMHVC.2012.6518764","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518764","url":null,"abstract":"Improved high temperature polymeric dielectrics are in demand for applications such as hybrid electric vehicles, advance aircraft, and deep oil/gas well drilling. Metallized polymeric film capacitors have the advantage of graceful failure as a result of self-healing. As no dielectrics are perfect insulators, trace amount of electrical conduction is always present, especially at high electric field and/or elevated temperature. In this work, high field conductivity and conduction mechanisms of polyphenylene sulfide (PPS) and polyethylene terephthalate (PET) were investigated. Results suggest charge injection through Schottky mechanism and conduction through hopping in both polymers. The average activation energies of PPS and PET were 0.90 and 1.03 eV, respectively.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116723198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Analysis on stray parameters in a solid-state Marx pulsed power modulator 固态马克思脉冲功率调制器杂散参数分析
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518740
J. Qiu, Kefu Liu, Liuxia Li
{"title":"Analysis on stray parameters in a solid-state Marx pulsed power modulator","authors":"J. Qiu, Kefu Liu, Liuxia Li","doi":"10.1109/IPMHVC.2012.6518740","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518740","url":null,"abstract":"In many pulsed power applications, high voltage and high frequency square pulses are needed. Traditional Marx type modulators based on solid-state switches often couldn't meet the requirements, especially on frequency and waveform. To solve the problems, a noval solid-state pulsed power modulator based on charging and driving by magnetic ring transformers is introduced in this paper. In order to obtain pulses with steep voltage edges on various kinds of loads, half bridges formed by MOSFET switches are used in the modulator. The usage of magnetic rings makes the stray capacitance become one of the most important aspects to distort the output voltage waveforms. The effect of stray parameters on output waveforms is analysed in detail by the experiments in this paper. According to the analysis, this paper deals with a design of the pulsed power modulator with isolated recharge for dielectric barrier discharge (DBD) research, In order to design much more suitable pulse modulators, some methods are described to reduce the influence of the stray parameters.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117273479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of precision high voltage CCPS for XFEL XFEL高精度高压CCPS的研制
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518780
S. S. Park, S. Kim, S. Kwon, S. Jang, B. Lee, Y. Moon, H. Lee, H. Kang, J. Y. Whaung, S. Nam, I. Ko, M. Cho, D. Kim, S. Y. Lee, H. Shin, K. Jang, S. Roh
{"title":"Development of precision high voltage CCPS for XFEL","authors":"S. S. Park, S. Kim, S. Kwon, S. Jang, B. Lee, Y. Moon, H. Lee, H. Kang, J. Y. Whaung, S. Nam, I. Ko, M. Cho, D. Kim, S. Y. Lee, H. Shin, K. Jang, S. Roh","doi":"10.1109/IPMHVC.2012.6518780","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518780","url":null,"abstract":"From 2011, the Pohang Accelerator Laboratory (PAL) had started the 10 GeV PAL-XFEL project. The PAL-XFEL needs a highly stable electron beam. The very stable beam voltage of a klystron- modulator is essential to provide the stable acceleration field for an electron beam[1]. Thus, the modulator system for the XFEL requires less than 50 ppm PFN voltage stability. To get this high stability on the modulator system, the inverter type HVPS is a pivot component. The requested specification of the inverter power supply is being developed the 50 kV, 5 kJ/sec 1 sets and 30 kJ/sec 4 sets at the PAL. In this paper, we will discuss the development and the test results of the inverter power supply for pulse modulator system for obtaining machine stability.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"288 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116236571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Open Transverse ElectroMagnetic (TEM) cell as applicator of high-intensity nsPEFs and electro-optic measurements 开放式横向电磁(TEM)电池应用于高强度nspf和电光测量
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518857
S. Kohler, T. T. Vu, P. Vernier, D. Arnaud-Cormos, P. Lévêque
{"title":"Open Transverse ElectroMagnetic (TEM) cell as applicator of high-intensity nsPEFs and electro-optic measurements","authors":"S. Kohler, T. T. Vu, P. Vernier, D. Arnaud-Cormos, P. Lévêque","doi":"10.1109/IPMHVC.2012.6518857","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518857","url":null,"abstract":"To expose biological cells or tissues to nanosecond pulsed electric fields of high intensity (>>kV/cm) and subnanosecond rise time, broadband exposure system with high-voltage handling capabilities and compatible with the tools of biologists are needed. To deliver subnanosecond pulses to a biological target, a hyperband antenna has been reported. In this study, we propose to use a Transverse ElectroMagnetic (TEM) cell. We characterize the system experimentally and numerically with Gaussian-like pulses of about 1.2 ns and 1.8 kV amplitude. The results are compared with those obtained using a classical electroporation cuvette, a typical delivery system to expose cell suspensions to ultrashort pulsed electric fields.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123141207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The numerical simulation of the heat transfer performance of NBI power transmission line NBI输电线传热性能的数值模拟
2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC) Pub Date : 2012-06-03 DOI: 10.1109/IPMHVC.2012.6518851
Desheng Cheng, Ge Li, Fei Xie, Qiangjian Chen
{"title":"The numerical simulation of the heat transfer performance of NBI power transmission line","authors":"Desheng Cheng, Ge Li, Fei Xie, Qiangjian Chen","doi":"10.1109/IPMHVC.2012.6518851","DOIUrl":"https://doi.org/10.1109/IPMHVC.2012.6518851","url":null,"abstract":"When the transmission lines of ion source is inserted into the high voltage snubber, the temperature of the transmission lines is rising as transmission wire accumulated a large amount of electric power, so the balance temperature of transmission line will be important basis for the safety operation of ion source and the choice of the insulation material. In this paper, the heat transfer performance of neutral beam transmission line is analyzed with CFD (computational fluid dynamics) software. The temperature of the transmission lines inserted in the snubber is obtained after numbers of pulse cycle using the numerical simulation model, and the result would provide a reliable basis for modification of NBI power transmission lines design.","PeriodicalId":228441,"journal":{"name":"2012 IEEE International Power Modulator and High Voltage Conference (IPMHVC)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125894025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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